AUIRF3415 [INFINEON]
ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE; 高级平面技术，低导通电阻
| 型号： | AUIRF3415 |
| 厂家： | 
Infineon |
| 描述： | ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE |
| 文件： | 总11页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97625
AUTOMOTIVEGRADE
AUIRF3415
HEXFET® Power MOSFET
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
D
V(BR)DSS
RDS(on) max.
ID
150V
0.042Ω
43A
G
S
l Lead-Free, RoHS Compliant
l AutomotiveQualified*
D
S
D
Description
G
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
TO-220AB
AUIRF3415
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
43
Parameter
Units
Continuous Drain Current, VGS @ 10V
@ T = 25°C
C
I
I
I
D
D
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
30
A
@ T = 100°C
C
150
DM
200
1.3
Power Dissipation
@T = 25°C
C
W
W/°C
V
P
D
Linear Derating Factor
Gate-to-Source Voltage
± 20
V
GS
EAS
IAR
590
22
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
mJ
A
EAR
dv/dt
20
5.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
-55 to + 175
T
T
J
Storage Temperature Range
°C
STG
300
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
RθCS
RθJA
Junction-to-Case
–––
0.50
–––
0.75
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/19/2011
AUIRF3415
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
150
–––
–––
V
∆
∆
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient –––
0.17
––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Ω
V
S
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
––– 0.042
VGS = 10V, ID = 22A
–––
–––
–––
–––
–––
4.0
–––
25
VDS = VGS, ID = 250µA
VDS = 50V, ID = 22A
gfs
IDSS
Forward Transconductance
19
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
nA VGS = 20V
250
100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
200
17
ID = 22A
DS = 120V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
V
98
VGS = 10V, See Fig. 6 & 13
VDD = 75V
–––
–––
–––
–––
–––
55
ID = 22A
td(off)
tf
Turn-Off Delay Time
Fall Time
71
ns
RG = 2.5 Ω
RD = 3.3 Ω, See Fig. 10
Between lead,
69
D
S
LD
Internal Drain Inductance
4.5
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
GS = 0V
VDS = 25V
Ciss
Coss
Crss
Input Capacitance
––– 2400 –––
V
Output Capacitance
–––
–––
640
340
–––
–––
pF
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
I
I
Continuous Source Current
–––
–––
43
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
–––
150
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
260
2.2
1.3
390
3.3
V
T = 25°C, I = 22A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 22A
J F
rr
di/dt = 100A/µs
Q
t
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 2.4mH
RG = 25Ω, IAS = 22A. (See Figure 12)
ISD ≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
ꢀ R is measured at TJ approximately 90°C.
θ
2
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AUIRF3415
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
TO-220
N/A
Class M4 (+/- 800V)†††
Machine Model
AEC-Q101-002
Class H2 (+/- 3500V)†††
Human Body Model
ESD
AEC-Q101-001
Class C5 (+/- 2000V)†††
AEC-Q101-005
Charged Device
Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF3415
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
VGS
TOP
TOP
15V
10V
8.0V
7.0V
5.0V
5.0V
5.5V
5.5V
BOTTOM4.5V
5.5V
5.5V
BOTTOM 4.5V
100
4.5V
4.5V
10
20us PULSE WIDTH
20us PULSE WIDTH
T = 175oC
T = 25 oC
J
J
10
1
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
37A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
100
°
T = 175 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
10
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
o
4
5
6
7
8
9
10
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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AUIRF3415
6000
5000
4000
3000
2000
1000
0
20
16
12
8
V
= 0V,
f = 1MHz
gd , ds
I
D
= 22A
GS
C
= C + C
C
SHORTED
V
V
V
= 120V
DS
iss
gs
C
= C
gd
= 75V
DS
rss
C
= C + C
ds
= 30V
DS
oss
gd
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
40
80
120
160
200
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
100
10
1
10us
T = 175oC
J
100us
T = 25oC
J
1ms
T = 25o C
C
10ms
T = 175o C
J
V
= 0 V
Single Pulse
GS
0.1
0.2
1
10
100
1000
0.6
1.0
1.4
1.8
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
AUIRF3415
RD
VDS
50
40
30
20
10
0
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3415
1400
1200
1000
800
600
400
200
0
I
D
TOP
9.0A
16A
15V
BOTTOM 22A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
Starting T , Junction Temperature (oC)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
AUIRF3415
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
D.U.T
• Low Stray Inductance
+
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
+
-
+
-
RG
• dv/dt controlled by RG
VDD
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
*
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
8
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AUIRF3415
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
PartNumber
AUIRF3415
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRF3415
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRF3415
TO-220
Tube
50
AUIRF3415
10
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AUIRF3415
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
withIR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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11
相关型号：
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INFINEON
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