AUIRF3305 [INFINEON]
Advanced Planar Technology; 高级平面技术
| 型号： | AUIRF3305 |
| 厂家： | 
Infineon |
| 描述： | Advanced Planar Technology |
| 文件： | 总12页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96336
AUTOMOTIVE MOSFET
AUIRF3305
HEXFET® Power MOSFET
Features
D
S
V(BR)DSS
55V
8m
l
l
l
l
l
l
l
AdvancedPlanarTechnology
LowOn-Resistance
Dynamic dV/dT Rating
175°COperatingTemperature
Fast Switching
RDS(on) max.
ID
Ω
G
140A
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
l
l
Lead-Free,RoHSCompliant
Automotive Qualified *
Description
SpecificallydesignedforAutomotiveapplications,thiscellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
TO-220AB
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
140
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
99
A
560
PD @TC = 25°C
330
Power Dissipation
W
W/°C
V
2.2
Linear Derating Factor
VGS
± 20
Gate-to-Source Voltage
EAS
470
860
Single Pulse Avalanche Energy(Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
EAS (Tested )
IAR
See Fig.12a, 12b, 15, 16
A
EAR
TJ
Repetitive Avalanche Energy
mJ
-55 to + 175
Operating Junction and
TSTG
°C
Storage Temperature Range
300
Soldering Temperature, for 10 seconds(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
Max.
0.45
–––
62
Units
RθJC
RθCS
RθJA
Junction-to-Case
–––
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/02/10
AUIRF3305
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
55
Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
0.055
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
V
–––
–––
2.0
Ω
m
VGS = 10V, ID = 75A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 75A
VGS(th)
4.0
V
gfs
IDSS
Forward Transconductance
41
–––
25
S
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA
VDS = 55V, VGS = 0V
250
200
-200
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
100
21
45
16
88
43
34
4.5
150
–––
–––
–––
–––
–––
–––
–––
ID = 75A
nC
VDS = 44V
VGS = 10V
VDD = 28V
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
ns
RG = 2.6 Ω
VGS = 10V
Between lead,
LD
Internal Drain Inductance
nH
6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
–––
–––
–––
–––
–––
–––
3650
1230
450
–––
–––
–––
–––
–––
–––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Output Capacitance
pF
ƒ = 1.0MHz
4720
930
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Output Capacitance
Coss eff.
Effective Output Capacitance
1490
Diode Characteristics
Parameter
Min.
Typ. Max. Units
Conditions
I
I
Continuous Source Current
–––
–––
75
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
560
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
57
1.3
86
V
T = 25°C, I = 75A , V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
T = 25°C, I = 75A , VDD = 28V
J F
di/dt = 100A/µs
rr
Q
t
130
190
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
This value determined from sample failure population. 100% tested to this
Repetitive rating; pulse width limited by max. junction temperature.
(See fig. 11).
value in production.
Rθ is measured at TJ of approximately 90°C.
All AC and DC test conditions based on former package limited
current of 75A.
Limited by TJmax, starting TJ = 25°C, L = 0.17mH RG = 25Ω, IAS = 75A,
VGS =10V. Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS
.
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
2
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AUIRF3305
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
Moisture Sensitivity Level
3L-TO-220
N/A
Class M4(425V)
Machine Model
(per AEC-Q101-002)
Class H2 (4000V)
(per AEC-Q101-001)
Class C5 (1125V)
(per AEC-Q101-005)
Yes
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF3305
1000
100
10
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
BOTTOM
100
4.5V
4.5V
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 175°C
Tj = 25°C
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
60
40
20
0
1000.0
T
= 25°C
J
100.0
10.0
1.0
T
= 175°C
T
= 175°C
J
J
T
= 25°C
J
V
= 25V
DS
≤ 60µs PULSE WIDTH
V
= 10V
DS
380µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
20
40
60
80 100 120 140
V
, Gate-to-Source Voltage (V)
GS
I
Drain-to-Source Current (A)
D,
Fig 4. Typical Forward Transconductance
Fig 3. Typical Transfer Characteristics
Vs. Drain Current
4
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AUIRF3305
7000
6000
5000
4000
3000
2000
1000
0
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 75A
= C + C , C SHORTED
D
V
= 44V
iss
gs
gd ds
DS
VDS= 28V
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
Coss
Crss
4
0
0
40
80
120
160
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
100.0
10.0
1.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
J
= 25°C
1
Tc = 25°C
10msec
DC
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.0
0.4
V
0.8
1.2
1.6
2.0
2.4
V
, Drain-toSource Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
AUIRF3305
2.5
2.0
1.5
1.0
0.5
160
140
120
100
80
I
= 75A
D
V
= 10V
GS
60
40
20
0
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Normalized On-Resistance
Case Temperature
Vs. Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
R3
0.01
Ri (°C/W) τi (sec)
0.1758 0.00045
R3
0.02
0.01
τ
J τJ
τ
Cτ
τ
τ
1τ1
τ
2 τ2
3τ3
0.228
0.004565
0.0457 0.01858
Ci= τi/Ri
0.001
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3305
2000
1600
1200
800
400
0
I
D
15V
TOP
18A
26A
BOTTOM 75A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
V
(BR)DSS
Starting T , Junction Temperature (°C)
t
p
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
I
I
= 5.0A
= 1.0A
D
D
D
Q
G
= 250µA
10 V
Q
Q
GD
GS
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
T
L
Fig 14. Threshold Voltage Vs. Temperature
VCC
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
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7
AUIRF3305
10000
Duty Cycle = Single Pulse
1000
100
10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
0.10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
500
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 1% Duty Cycle
= 75A
Single Pulse
I
400
300
200
100
0
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
8
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AUIRF3305
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
V
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Re-Applied
Voltage
RG
+
-
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF3305
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUF3305
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3305
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRF3305
TO-220
Tube
50
AUIRF3305
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11
AUIRF3305
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the
righttomakecorrections, modifications, enhancements, improvements, andotherchangestoitsproductsandservicesatanytime
and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry
and / or customer specific requirements with regards to product discontinuance and process change notification. All products are
sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IRwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewithIR’sstandard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide
adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is
anunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation. Informationofthirdparties
may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voidsallexpressandanyimpliedwarrantiesfortheassociatedIRproductorserviceandisanunfairanddeceptivebusinesspractice.
IR is not responsible or liable for any such statements.
IRproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody,
orinotherapplicationsintendedtosupportorsustainlife,orinanyotherapplicationinwhichthefailureoftheIRproductcouldcreate
a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly
or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that IR was negligent regarding the design or manufacture of the product.
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are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet
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connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
aredesignatedbyIRascompliantwithISO/TS16949requirementsandbearapartnumberincludingthedesignation“AU”. Buyers
acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
12
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INFINEON
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