F2258 [IDT]
Voltage Variable RF Attenuator;
| 型号： | F2258 |
| 厂家： | 
INTEGRATED DEVICE TECHNOLOGY |
| 描述： | Voltage Variable RF Attenuator |
| 文件： | 总24页 (文件大小：2089K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDTF2258NLGK
Datasheet
Voltage Variable RF Attenuator
50 to 6000 MHz
FEATURES
GENERAL DESCRIPTION
Low Insertion Loss: 1.4 dB @ 2000 MHz
Typical / Min IIP3: 65 dBm / 47 dBm
Typical / Min IIP2: 95 dBm / 87 dBm
33.6 dB Attenuation Range
The F2258 is a low insertion loss Voltage Variable RF
Attenuator (VVA) designed for a multitude of wireless
and other RF applications. This device covers a broad
frequency range from 50 MHz to 6000 MHz. In
addition to providing low insertion loss, the F2258
provides excellent linearity performance over its entire
voltage control and attenuation range.
Bi-directional RF ports
+34.4 dBm Input P1dB compression
Linear-in-dB attenuation characteristic
Supply voltage: 3.15 V to 5.25 V
VCTRL range: 0 V to 3.6 V using 5 V supply
+105 °C max operating temperature
3 mm x 3 mm, 16-pin QFN package
The F2258 uses a single positive supply voltage of
3.15 V to 5.25 V. Another feature includes multi-
directional operation meaning the RF input can be
applied to either RF1 or RF2 pins. Control voltage
ranges from 0 V to 3.6 V.
FUNCTIONAL BLOCK DIAGRAM
COMPETITIVE ADVANTAGE
F2258 provides extremely low insertion loss and
superb IP3, IP2, Return Loss and Slope Linearity
across the control range. Comparing to the previous
state-of-the-art for silicon VVAs this device is better as
follows:
RF1
RF2
Insertion Loss:
@ 2000 MHz: 1.4 dB vs. 2.8 dB
@ 6000 MHz: 2.7 dB vs. 7.0 dB
Control
Maximum Attenuation Slope:
33 dB/Volt vs. 53 dB/Volt
Minimum Return Loss up to 6000 MHz:
VDD VCTRL
12.5 dB vs. 7 dB
Minimum Output IP3:
ORDERING INFORMATION
31 dBm vs. 15 dBm
Minimum Input IP2:
Omit IDT
prefix
Tape &
Reel
0.9 mm height
87 dBm vs. 80 dBm
package
Maximum Operating Temperature:
+105 °C vs. +85 °C
IDTF2258NLGK8
APPLICATIONS
Green
RF Product Line
Base Station 2G, 3G, 4G,
Portable Wireless
Repeaters and E911 systems
Digital Pre-Distortion
Point to Point Infrastructure
Public Safety Infrastructure
Satellite Receivers and Modems
WIMAX Receivers and Transmitters
Military Systems, JTRS radios
RFID handheld and portable readers
Cable Infrastructure
Wireless LAN
Test / ATE Equipment
F2258, Rev 1 01/20/2017
1
© 2015 Integrated Device Technology, Inc.
F2258
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Units
VDD to GND
VDD
-0.3
+5.5
V
Minimum
(VDD, +4.0)
VCTRL to GND (with 0 V ≤ VDD ≤ 5.25 V)
VCTRL
VRF
-0.3
-0.3
V
V
RF1, RF2 to GND
0.3
30
RF1 or RF2 Input Power applied for 24
hours maximum (VDD applied @ 2000 MHz
and Tcase=+85°C)
PMAX24
dBm
Junction Temperature
Tj
150
150
260
°C
°C
°C
Storage Temperature Range
Lead Temperature (soldering, 10s)
Tst
-65
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2012)
VESDHBM
VESDCDM
(Class 1C)
(Class C3)
ElectroStatic Discharge – CDM
(JEDEC 22-C101F)
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL AND MOISTURE CHARACTERISTICS
θJA (Junction – Ambient)
80.6 °C/W
5.1 °C/W
MSL1
θJC (Junction – Case) [The Case is defined as the exposed paddle]
Moisture Sensitivity Rating (Per J-STD-020)
Voltage Variable RF Attenuator
2
Rev 1 01/20/2017
F2258
F2258 RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Symbol
Conditions
Min
3.15
0
Typ
Max
5.25
Units
VDD
V
VDD = 3.90 V to 5.25 V
VDD = 3.15 V to 3.90 V
Exposed Paddle
3.6
Control Voltage
VCTRL
V
0
VDD-0.3
+105
6000
Operating Temperature Range
Frequency Range
TCASE
FRF
-40
50
°C
MHz
Power can be applied
to RF1 or RF2
See
Figure 1
RF Operating Power
PMAX
,
dBm
CW
RF1 Port Impedance
RF2 Port Impedance
ZRF1
ZRF2
Single Ended
Single Ended
50
50
Ω
Ω
Figure 1 - MAXIMUM RF INPUT POWER VS. RF FREQUENCY
Rev 1 01/20/2017
3
Voltage Variable RF Attenuator
F2258
F2258 SPECIFICATION
Refer to EVKit / Applications Circuit, VDD = +3.3 V, TCASE = +25 °C, signal applied to RF1 input, FRF = 2000 MHz,
minimum attenuation, PIN = 0 dBm for small signal parameters, +20 dBm for single tone linearity tests, +20 dBm per
tone for two tone tests, two tone delta frequency = 50 MHz, PCB board traces and connector losses are de-embedded
unless otherwise noted. Refer to Typical Operating Curves for performance over entire frequency band.
Parameter
Supply Current
Symbol
IDD
Conditions
Min
0.5 1
-1.0
Typ
1.17
Max Units
2
mA
μA
dB
dB
ICTRL Current
ICTRL
14
1.9
Insertion Loss, IL
Maximum Attenuation
AMIN
Minimum Attenuation
1.4
35
AMAX
34 2
At 36 dB attenuation relative
to Insertion Loss
ΦΔMAX
27
10
Insertion Phase Δ
Deg
At 18 dB attenuation relative
to Insertion Loss
ΦΔMID
Input 1dB Compression 3
P1dB
34.4
16
17
17
15
16
15
16
13
65
47
35
dBm
50 MHz4
700 MHz
2000 MHz
6000 MHz
50 MHz4
700 MHz
2000 MHz
6000 MHz
Minimum RF1 Return Loss
over control voltage range
S11
dB
dB
Minimum RF2 Return Loss
over control voltage range
S22
IIP3
Input IP3
dBm
dBm
IIP3MIN
OIP3MIN
All attenuation settings
Maximum attenuation
44
Output IP3
PIN + IM2dBc,
IM2 term is F1+F2
IIP2
95
Input IP2
dBm
IIP2MIN
HD2
All attenuation settings
PIN + H2dBc
87
90
54
Input IH2
Input IH3
dBm
dBm
HD3
PIN + (H3dBc/2)
Any 1 dB step in the 0 dB to
33 dB control range
50% VCTRL to RF settled to
Settling Time
TSETTL0.1dB
15
µs
within ± 0.1 dB
Note 1:
Note 2:
Note 3:
Items in min/max columns in bold italics are Guaranteed by Test.
Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
The input 1dB compression point is a linearity figure of merit. Refer to Absolute Maximum Ratings section along with Figure 1 for the
maximum RF input power vs. RF frequency.
Note 4:
Set blocking capacitors C1 & C2 to 0.01uF to achieve best return loss performance at 50 MHz.
Voltage Variable RF Attenuator
4
Rev 1 01/20/2017
F2258
TYPICAL OPERATING CONDITIONS (TOC)
Unless otherwise noted for the TOC graphs on the following pages, the following conditions apply.
VDD = +3.3 V or +5.0 V
TCASE = +25 ºC
FRF = 2000 MHz
RF trace and connector losses are de-embedded for S-parameters
Pin = 0 dBm for all small signal tests
Pin = +20 dBm for single tone linearity tests (RF1 port driven)
Pin = +20 dBm/tone for two tone linearity tests (RF1 port driven)
Two tone frequency spacing = 50 MHz
Rev 1 01/20/2017
5
Voltage Variable RF Attenuator
F2258
TYPICAL OPERATING CONDITIONS [S2P BROADBAND PERFORMANCE] (- 1 -)
Attenuation vs. VCTRL
Attenuation vs. Frequency
0
0
0.4GHz
0.7GHz
1.5GHz
2.7GHz
4.0GHz
5.0GHz
6.0GHz
-5
-10
-15
-20
-25
-30
-35
-40
-10
-20
-30
-40
Vctrl = 0.0V
Vctrl = 1.2V
Vctrl = 1.8V
Vctrl = 0.8V
Vctrl = 1.4V
Vctrl = 2.4V
Vctrl = 1.0V
Vctrl = 1.6V
-50
0
1
2
3
4
5
6
7
8
9
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VCTRL (V)
Frequency (GHz)
Min. & Max. Attenuation vs. Frequency
Attenuation Delta to 25C vs. Frequency
3.00
-40C / 0.9GHz
-40C / 2.0GHz
-40C / 3.0GHz
105C / 3.0GHz
2.50
2.00
1.50
1.00
0.50
0.00
-0.50
-1.00
-1.50
-2.00
-2.50
-3.00
105C / 0.9GHz
105C / 2.0GHz
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VCTRL (V)
Voltage Variable RF Attenuator
6
Rev 1 01/20/2017
F2258
TYPICAL OPERATING CONDITIONS [S2P VS. VCTRL] (- 2 -)
Attenuation vs. VCTRL
Attenuation Slope vs. VCTRL
0
50
45
40
35
30
25
20
15
10
5
0.4GHz
0.7GHz
1.5GHz
2.7GHz
4.0GHz
5.0GHz
6.0GHz
0.4GHz
0.7GHz
1.5GHz
2.7GHz
4.0GHz
5.0GHz
6.0GHz
-5
-10
-15
-20
-25
-30
-35
-40
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VCTRL (V)
VCTRL (V)
RF2 Return Loss vs. VCTRL
RF1 Return Loss vs. VCTRL
0
0
0.4GHz
0.7GHz
1.5GHz
2.7GHz
4.0GHz
5.0GHz
6.0GHz
0.4GHz
0.7GHz
1.5GHz
2.7GHz
4.0GHz
5.0GHz
6.0GHz
-5
-10
-15
-20
-25
-30
-35
-40
-5
-10
-15
-20
-25
-30
-35
-40
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VCTRL (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VCTRL (V)
Insertion Phase Slope vs. VCTRL
Insertion Phase vs. VCTRL
100
70
0.4GHz
0.4GHz
(positive phase = electrically shorter)
0.7GHz
0.7GHz
1.5GHz
2.7GHz
4.0GHz
5.0GHz
6.0GHz
60
50
40
30
20
10
0
1.5GHz
80
2.7GHz
4.0GHz
60
5.0GHz
6.0GHz
40
20
0
-20
-10
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VCTRL (V)
VCTRL (V)
Rev 1 01/20/2017
7
Voltage Variable RF Attenuator
F2258
TYPICAL OPERATING CONDITIONS [S2P VS. VCTRL & TEMPERATURE] (- 3 -)
Attenuation Response vs. VCTRL
Attenuation Slope vs. VCTRL
0
50
-40C / 0.9GHz
25C / 0.9GHz
105C / 0.9GHz
-40C / 2.0GHz
25C / 2.0GHz
105C / 2.0GHz
-40C / 3.0GHz
25C / 3.0GHz
105C / 3.0GHz
-40C / 0.9GHz
25C / 0.9GHz
105C / 0.9GHz
-40C / 2.0GHz
25C / 2.0GHz
105C / 2.0GHz
-40C / 3.0GHz
25C / 3.0GHz
105C / 3.0GHz
45
40
35
30
25
20
15
10
5
-5
-10
-15
-20
-25
-30
-35
-40
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VCTRL (V)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VCTRL (V)
RF1 Return Loss vs. VCTRL
RF2 Return Loss vs. VCTRL
0
0
-40C / 0.9GHz
25C / 0.9GHz
105C / 0.9GHz
-40C / 2.0GHz
25C / 2.0GHz
105C / 2.0GHz
-40C / 3.0GHz
25C / 3.0GHz
105C / 3.0GHz
-40C / 0.9GHz
-40C / 2.0GHz
25C / 2.0GHz
-40C / 3.0GHz
25C / 3.0GHz
105C / 3.0GHz
-5
25C / 0.9GHz
105C / 0.9GHz
-5
-10
-15
-20
-25
-30
-35
-40
105C / 2.0GHz
-10
-15
-20
-25
-30
-35
-40
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VCTRL (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VCTRL (V)
Insertion Phase vs. VCTRL
Insertion Phase Slope vs. VCTRL
(positive phase = electrically shorter)
Voltage Variable RF Attenuator
8
Rev 1 01/20/2017
F2258
TYPICAL OPERATING CONDITIONS [S2P VS. ATTENUATION & TEMPERATURE] (- 4 -)
RF1 Return Loss vs. Attenuation
RF1 Return Loss vs. Attenuation
0
0
0.4GHz
0.7GHz
1.5GHz
2.7GHz
4.0GHz
5.0GHz
6.0GHz
-40C / 0.9GHz
25C / 0.9GHz
105C / 0.9GHz
-40C / 2.0GHz
-40C / 3.0GHz
-5
-10
-15
-20
-25
-30
-35
-40
25C / 2.0GHz
105C / 2.0GHz
25C / 3.0GHz
105C / 3.0GHz
-5
-10
-15
-20
-25
-30
-35
-40
0
4
8
12
16
20
24
28
32
36
0
4
8
12
16
20
24
28
32
36
Attenuation (dB)
Attenuation (dB)
RF2 Return Loss vs. Attenuation
RF2 Return Loss vs. Attenuation
0
0
0.4GHz
0.7GHz
1.5GHz
2.7GHz
4.0GHz
5.0GHz
6.0GHz
-40C / 0.9GHz
25C / 0.9GHz
105C / 0.9GHz
-40C / 2.0GHz
-40C / 3.0GHz
25C / 3.0GHz
105C / 3.0GHz
-5
-10
-15
-20
-25
-30
-35
-40
25C / 2.0GHz
105C / 2.0GHz
-5
-10
-15
-20
-25
-30
-35
-40
0
4
8
12
16
20
24
28
32
36
0
4
8
12
16
20
24
28
32
36
Attenuation (dB)
Attenuation (dB)
Insertion Phase Δ vs. Attenuation
Insertion Phase Δ vs. Attenuation
50
70
0.4GHz
-40C / 0.9GHz
25C / 0.9GHz
105C / 0.9GHz
-40C / 2.0GHz
-40C / 3.0GHz
25C / 3.0GHz
105C / 3.0GHz
0.7GHz
45
40
35
30
25
20
15
10
5
25C / 2.0GHz
105C / 2.0GHz
60
50
40
30
20
10
0
1.5GHz
2.7GHz
4.0GHz
5.0GHz
6.0GHz
(positive phase = electrically shorter)
(positive phase = electrically shorter)
0
-10
0
4
8
12
16
20
24
28
32
36
0
4
8
12
16
20
24
28
32
36
Attenuation (dB)
Attenuation (dB)
Rev 1 01/20/2017
9
Voltage Variable RF Attenuator
F2258
TYPICAL OPERATING CONDITIONS [S2P VS. FREQUENCY] (- 5 -)
Min & Max. Attenuation vs. Frequency
Min. & Max. Attenuation Slope vs. Frequency
50
45
40
35
30
25
20
15
10
Max. Slope
Min. Slope
VCTRL varied from 0.8V to 1.8V
0
1
2
3
4
5
6
Frequency (GHz)
Worst-Case RF1 Return Loss vs. Frequency
Worst-Case RF2 Return Loss vs. Frequency
0
-40C
25C
0
-40C
25C
105C
-5
-10
-15
-20
-25
105C
-5
-10
-15
-20
-25
0
1
2
3
4
5
6
Frequency (GHz)
0
1
2
3
4
5
6
Frequency (GHz)
Max. Insertion Phase vs. Frequency
70
Gain Compression vs. Frequency
-40C
25C
60
105C
50
40
30
20
10
(positive phase = electrically shorter)
0
-10
0
1
2
3
4
5
6
Frequency (GHz)
Voltage Variable RF Attenuator
10
Rev 1 01/20/2017
F2258
TYPICAL OPERATING CONDITIONS [S2P @ LOW FREQUENCY, GROUP DELAY] (- 6 -)
Min & Max. Attenuation vs. Low Frequency
Low-Frequency Attenuation vs. VCTRL
0
-40C / 43MHz
25C / 43MHz
-5
-10
-15
-20
-25
-30
105C / 43MHz
-40C / 128MHz
25C / 128MHz
105C / 128MHz
-40C / 255MHz
25C / 255MHz
105C / 255MHz
(C1, C2 set to 0.1uF)
-35
(C1, C2 set to 0.1uF)
-40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
VCTRL (V)
Low-Frequency RF2 Return Loss vs. VCTRL
Low-Frequency RF1 Return Loss vs. VCTRL
0
0
-40C / 43MHz
-40C / 128MHz
-40C / 255MHz
25C / 43MHz
25C / 128MHz
25C / 255MHz
105C / 43MHz
105C / 128MHz
105C / 255MHz
-40C / 43MHz
-40C / 128MHz
-40C / 255MHz
25C / 43MHz
25C / 128MHz
25C / 255MHz
105C / 43MHz
105C / 128MHz
105C / 255MHz
-5
-10
-15
-20
-25
-30
-35
-40
-5
-10
-15
-20
-25
-30
-35
-40
(C1, C2 set to 0.1uF)
(C1, C2 set to 0.1uF)
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
VCTRL (V)
VCTRL (V)
Group Delay vs. VCTRL
Worst-Case Return Loss vs. Low Frequency
100
-40C / Insertion Loss
25C / Insertion Loss
105C / Insertion Loss
-40C / Max. Attenuation
25C / Max. Attenuation
105C / Max. Attenuation
0
90
80
70
60
50
40
30
20
10
0
-40C /RF1
(C1, C2 set to 0.1uF)
25C / RF1
105C / RF1
-40C / RF2
25C / RF2
105C / RF2
-5
-10
-15
-20
0
1
2
3
4
5
6
0
100
200
300
400
500
Frequency (MHz)
Frequency (GHz)
Rev 1 01/20/2017
11
Voltage Variable RF Attenuator
F2258
TYPICAL OPERATING CONDITIONS 2GHZ, VDD=3.3V [IP3, IP2, IH2, IH3 VS. VCTRL] (- 7 -)
Input IP3 vs. VCTRL
Output IP3 vs. VCTRL
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
75
70
65
60
55
50
45
40
35
30
-40C
25C
-40C
25C
105C
105C
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
VCTRL (V)
VCTRL (V)
Output IP2 vs. VCTRL
Input IP2 vs. VCTRL
120
120
-40C
25C
110
100
90
110
100
90
105C
80
80
-40C
25C
70
70
60
60
105C
50
50
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
VCTRL (V)
VCTRL (V)
2nd Harm Input Intercept Point vs. VCTRL
3rd Harm Input Intercept Point vs. VCTRL
130
80
70
60
50
40
30
20
10
120
110
100
90
-40C
25C
-40C
25C
80
70
105C
105C
60
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
VCTRL (V)
VCTRL (V)
Voltage Variable RF Attenuator
12
Rev 1 01/20/2017
F2258
TYPICAL OPERATING CONDITIONS 2GHZ, VDD=3.3V [IP3, IP2, IH2, IH3 VS. VCTRL, RF1/RF2 DRIVEN] (- 8 -)
Input IP3 vs. VCTRL
Output IP3 vs. VCTRL
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
-40C / RF1 Driven
25C / RF1 Driven
105C / RF1 Driven
-40C / RF2 Driven
25C / RF2 Driven
105C / RF2 Driven
75
70
65
60
55
50
45
40
35
30
-40C / RF1 Driven
25C / RF1 Driven
105C / RF1 Driven
-40C / RF2 Driven
25C / RF2 Driven
105C / RF2 Driven
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
VCTRL (V)
VCTRL (V)
Input IP2 vs. VCTRL
Output IP2 vs. VCTRL
120
120
-40C / RF1 Driven
25C / RF1 Driven
105C / RF1 Driven
-40C / RF2 Driven
25C / RF2 Driven
105C / RF2 Driven
110
100
90
110
100
90
80
80
-40C / RF1 Driven
25C / RF1 Driven
105C / RF1 Driven
-40C / RF2 Driven
25C / RF2 Driven
105C / RF2 Driven
70
70
60
60
50
50
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
VCTRL (V)
VCTRL (V)
3rd Harm Input Intercept Point vs. VCTRL
2nd Harm Input Intercept Point vs. VCTRL
80
130
70
60
50
40
120
110
100
90
-40C / RF1 Driven
25C / RF1 Driven
105C / RF1 Driven
-40C / RF2 Driven
25C / RF2 Driven
105C / RF2 Driven
-40C / RF1 Driven
25C / RF1 Driven
105C / RF1 Driven
-40C / RF2 Driven
25C / RF2 Driven
105C / RF2 Driven
30
20
10
80
70
60
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
VCTRL (V)
VCTRL (V)
Rev 1 01/20/2017
13
Voltage Variable RF Attenuator
F2258
TYPICAL OPERATING CONDITIONS 2GHZ, VDD=3.3V [IP3, IP2, IH2, IH3 VS. ATTENUATION] (- 9 -)
Input IP3 vs. Attenuation
Output IP3 vs. Attenuation
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
75
70
65
60
55
50
45
40
35
30
-40C
25C
-40C
25C
105C
105C
0
4
8
12
16
20
24
28
32
36
0
4
8
12
16
20
24
28
32
36
Attenuation (dB)
Attenuation (dB)
Input IP2 vs. Attenuation
Output IP2 vs. Attenuation
120
120
-40C
25C
105C
110
100
90
110
100
90
80
80
-40C
70
70
25C
105C
32
60
60
50
50
0
4
8
12
16
20
24
28
32
36
0
4
8
12
16
20
24
28
36
Attenuation (dB)
Attenuation (dB)
3rd Harm Input Intercept Point vs. Attenuation
2nd Harm Input Intercept Point vs. Attenuation
80
130
70
60
50
40
120
110
100
90
-40C
-40C
80
30
25C
25C
70
20
105C
105C
60
10
0
4
8
12
16
20
24
28
32
36
0
4
8
12
16
20
24
28
32
36
Attenuation (dB)
Attenuation (dB)
Voltage Variable RF Attenuator
14
Rev 1 01/20/2017
F2258
TYPICAL OPERATING CONDITIONS 2GHZ, VDD=3.3V [IP3, IP2, IH2, IH3 VS. VCTRL, RF1/RF2 DRIVEN] (- 10 -)
Input IP3 vs. Attenuation
Output IP3 vs. Attenuation
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
-40C / RF1 Driven
25C / RF1 Driven
105C / RF1 Driven
-40C / RF2 Driven
25C / RF2 Driven
105C / RF2 Driven
75
70
65
60
55
50
45
40
35
30
-40C / RF1 Driven
25C / RF1 Driven
105C / RF1 Driven
-40C / RF2 Driven
25C / RF2 Driven
105C / RF2 Driven
0
4
8
12
16
20
24
28
32
36
0
4
8
12
16
20
24
28
32
36
Attenuation (dB)
Attenuation (dB)
Output IP2 vs. Attenuation
Input IP2 vs. Attenuation
120
120
-40C / RF1 Driven
25C / RF2 Driven
105C / RF1 Driven
-40C / RF2 Driven
25C / RF2 Driven
105C / RF2 Driven
110
100
90
110
100
90
80
80
-40C / RF1 Driven
25C / RF1 Driven
105C / RF1 Driven
-40C / RF2 Driven
25C / RF2 Driven
105C / RF2 Driven
70
70
60
60
50
50
0
4
8
12
16
20
24
28
32
36
0
4
8
12
16
20
24
28
32
36
Attenuation (dB)
Attenuation (dB)
2nd Harm Input Intercept Point vs. Attenuation
3rd Harm Input Intercept Point vs. Attenuation
130
80
120
110
100
70
60
50
40
90
-40C / RF1 Driven
-40C / RF1 Driven
30
80
25C / RF1 Driven
25C / RF1 Driven
105C / RF1 Driven
105C / RF1 Driven
-40C / RF2 Driven
20
-40C / RF2 Driven
70
25C / RF2 Driven
25C / RF2 Driven
105C / RF2 Driven
105C / RF2 Driven
10
60
0
4
8
12
16
20
24
28
32
36
0
4
8
12
16
20
24
28
32
36
Attenuation (dB)
Attenuation (dB)
Rev 1 01/20/2017
15
Voltage Variable RF Attenuator
F2258
PACKAGE DRAWING
(3mm x 3mm 16-pin QFN), NLG16
Voltage Variable RF Attenuator
16
Rev 1 01/20/2017
F2258
LAND PATTERN DIMENSION
Rev 1 01/20/2017
17
Voltage Variable RF Attenuator
F2258
PIN DIAGRAM
PIN DESCRIPTION
Pin
Name
Function
4, 9
GND
Ground these pins as close to the device as possible.
RF Port 2. Matched to 50 ohms. Must use an external AC coupling
capacitor as close to the device as possible. For low frequency operation
increase the capacitor value to result in a low reactance at the frequency of
interest.
3
5
RF2
VDD
NC
Power supply input. Bypass to GND with capacitors close as possible to pin.
1, 2, 6, 8, 11, 12, 13,
14, 15, 16
No internal connection. These pins can be left unconnected or connected to
ground.
Attenuator control voltage. Apply a voltage in the range as specified in the
7
VCTRL
RF1
Operating Conditions Table. See application section for details about VCTRL
.
RF Port 1. Matched to 50 ohms. Must use an external AC coupling
capacitor as close to the device as possible. For low frequency operation
increase the capacitor value to result in a low reactance at the frequency of
interest.
10
Exposed Pad. Internally connected to GND. Solder this exposed pad to a
PCB pad that uses multiple ground vias to achieve the specified RF
performance.
— EP
Voltage Variable RF Attenuator
18
Rev 1 01/20/2017
F2258
APPLICATIONS INFORMATION
Default Start-up
The VCTRL pin has an internal pull-down resistor. If left floating, the part will power up in the minimum
attenuation state.
VCTRL
The VCTRl pin is used to control the attenuation of the F2258. With VDD = 5 V the control range of VCTRl is from
0 V (minimum attenuation) to 3.6 V (maximum attenuation). For other settings of VDD refer to the Operating
Conditions Table. Apply VDD before applying voltage to the VCTRl pin to prevent damage to the on-chip pull-up
ESD diode. If this sequencing is not possible, then set resistor R2 to 1kΩ to limit the current into the VCTRl pin.
RF1 and RF2 Ports
The F2258 is a bi-directional device thus allowing RF1 or RF2 to be used as the RF input. As displayed in the
Typical Operating Conditions curves, RF1 shows enhanced linearity. VDD must be applied prior to the
application of RF power to ensure reliability. DC blocking capacitors are required on the RF pins and should be
set to a value that results in a low reactance over the frequency range of interest.
Power Supplies
The supply pin should be bypassed with external capacitors to minimize noise and fast transients. Supply
noise can degrade noise figure and fast transients can trigger ESD clamps and cause them to fail. Supply
voltage change or transients should have a slew rate smaller than 1V/20uS. In addition, all control pins
should remain at 0V (+/-0.3V) while the supply voltage ramps or while it returns to zero.
Control Pin Interface
If control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, undershoot,
ringing, etc., the following circuit at the input of control pin 7 is recommended as shown below.
16
15
14
13
12
11
10
9
1
2
3
4
RF2
RF1
Control
5
6
7
8
5Kohm
VCTRL
2pf
Rev 1 01/20/2017
19
Voltage Variable RF Attenuator
F2258
EVKIT PICTURE
Top View
Bottom View
Voltage Variable RF Attenuator
20
Rev 1 01/20/2017
F2258
EVKIT / APPLICATIONS CIRCUIT
Rev 1 01/20/2017
21
Voltage Variable RF Attenuator
F2258
EVKIT BOM (REV 02)
Item #
Part Reference
QTY
DESCRIPTION
Mfr. Part #
Mfr.
1
C3, C6
2
10nF ±5%, 50V, X7R Ceramic Capacitor (0603)
GRM188R71H103J
Murata
1000pF ±5%, 50V, C0G Ceramic Capacitor
(0402)
2
C4, C5
2
GRM1555C1H102J
Murata
3
4
5
6
7
C1, C2
R1, R2
2
2
4
1
1
100pF ±5%, 50V, C0G Ceramic Capacitor (0402)
0Ω Resistors (0402)
GRM1555C1H101J
ERJ-2GE0R00X
142-0701-851
Murata
Panasonic
Emerson Johnson
IDT
J1, J2, J3, J4
U1
Edge Launch SMA (0.375 inch pitch ground tabs)
Voltage Variable Attenuator
F2258NLGK
Printed Circuit Board
F2258 EVKIT REV 02
IDT
TOP MARKINGS
Lot Code
04Y
446L
F2258
Assembler
Code
Date Code [YWW]
(Week 46 of 2014)
Part Number
Voltage Variable RF Attenuator
22
Rev 1 01/20/2017
F2258
REVISION HISTORY SHEET
Rev
O
1
Date
2015-Aug-03
2017-Jan-20
Page
Description of Change
Initial Release
4
Increased the Max limits for IDD and ICTRL
Rev 1 01/20/2017
23
Voltage Variable RF Attenuator
F2258
Corporate Headquarters
6024 Silver Creek Valley Road
San Jose, CA 95138 USA
Sales
Tech Support
http://www.idt.com/support/technical-support
1-800-345-7015 or 408-284-8200
Fax: 408-284-2775
www.idt.com
DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT’s sole discretion. Performance
specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The
information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for any particular
purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under
intellectual property rights of IDT or any third parties.
IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can
be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.
Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are
the property of IDT or their respective third party owners.
Copyright ©2015. Integrated Device Technology, Inc. All rights reserved.
Voltage Variable RF Attenuator
24
Rev 1 01/20/2017
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