858S011AKILF [IDT]

Low Skew, 1-To-2, Differential-To-CML Fanout Buffer;
858S011AKILF
型号: 858S011AKILF
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

Low Skew, 1-To-2, Differential-To-CML Fanout Buffer

驱动 逻辑集成电路
文件: 总14页 (文件大小:375K)
中文:  中文翻译
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Low Skew, 1-To-2, Differential-To-CML  
Fanout Buffer  
ICS858S011I  
Datasheet  
Description  
Features  
The ICS858S011I is a high-speed 1-to-2 Differential-to-CML Fanout  
Buffer. The device is optimized for high-speed and very low output  
skew, making it suitable for use in demanding applications such as  
SONET, 1 Gigabit and 10 Gigabit Ethernet, and Fibre Channel. The  
internally terminated differential input and VREF_AC pin allow other  
differential signal families such as LVDS, LVPECL, SSTL, and CML  
to be easily interfaced to the input with minimal use of external  
components.  
Two differential CML outputs  
IN/nIN pair can accept the following differential input levels:  
LVPECL, LVDS, CML, SSTL  
Maximum output frequency: 2GHz  
Output skew: 25ps (maximum)  
Part-to-part skew: 250ps (maximum)  
Additive phase jitter, RMS: 0.042ps (typical)  
Propagation delay: 525ps (maximum)  
The ICS858S011I is packaged in a small 3mm x 3mm 16-pin VFQFN  
package which makes it ideal for use in space-constrained  
applications.  
Operating voltage supply range:  
VCC = 2.375V to 3.63V, VEE = 0V  
-40°C to 85°C ambient operating temperature  
Available in lead-free (RoHS 6) package  
Block Diagram  
Pin Assignment  
Q0  
16 15 14 13  
IN  
nQ0  
1
2
3
IN  
VT  
12  
11  
10  
Q0  
RIN  
RIN  
VT  
nIN  
nQ0  
nQ1  
Q1  
VREF_AC  
nIN  
Q1  
4
9
5
6
7
8
nQ1  
VREF_AC  
ICS858S011I  
16-Lead VFQFN  
3mm x 3mm x 0.925mm package body  
K Package  
Top View  
© Integrated Device Technology, Inc.  
1
September 19, 2017  
ICS858S011I Datasheet  
Table 1. Pin Descriptions  
Number  
Name  
IN  
Type  
Input  
Description  
1
Non-inverting differential LVPECL clock input.  
Termination input.  
2
3
VT  
Input  
VREF_AC  
nIN  
Output  
Input  
Reference voltage for AC-coupled applications.  
Inverting differential LVPECL clock input.  
Power supply pins.  
4
5, 8, 13, 16  
6, 7, 14, 15  
9, 10  
VCC  
Power  
Power  
Output  
Output  
VEE  
Negative supply pins.  
Q1, nQ1  
nQ0, Q0  
Differential output pair. CML interface levels.  
Differential output pair. CML interface levels.  
11, 12  
Absolute Maximum Ratings  
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.  
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond  
those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect product reliability.  
Item  
Rating  
Supply Voltage, VCC  
Inputs, VI  
4.6V (CML mode, VEE = 0V)  
-0.5V to VCC + 0.5V  
Outputs, IO  
Continuous Current  
Surge Current  
20mA  
40mA  
Input Current, IN/nIN  
+50mA  
VT Current, IVT  
+100mA  
Input Sink/Source, IREF_AC  
±2mA  
Operating Temperature Range, TA  
Storage Temperature, TSTG  
Package Thermal Impedance, JA (Junction-to-Ambient)  
-40°C to 85°C  
-65C to 150C  
74.7C/W (0 mps)  
DC Electrical Characteristics  
Table 2A. Power Supply DC Characteristics, VCC = 2.375V to 3.63V, VEE = 0V, TA = -40°C to 85°C  
Symbol Parameter  
VCC Positive Supply Voltage  
IEE Power Supply Current  
Test Conditions  
Minimum  
Typical  
Maximum  
3.63  
Units  
V
2.375  
3.3  
57  
mA  
© Integrated Device Technology, Inc.  
2
September 19, 2017  
ICS858S011I Datasheet  
Table 2B. DC Characteristics, VCC = 2.375V to 3.63V, VEE = 0V, TA = -40°C to 85°C  
Symbol  
RIN  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
60  
Units  
Differential Input Resistance  
Input High Voltage  
IN/nIN  
IN/nIN  
IN/nIN  
IN to VT, nIN to VT  
40  
1.2  
0
50  
V
V
V
V
V
V
VIH  
VCC  
VIL  
Input Low Voltage  
VIH – 0.15  
1.2  
VIN  
Input Voltage Swing; NOTE 1  
Differential Input Voltage Swing  
Voltage between IN and VT  
Reference Voltage  
0.15  
0.3  
VDIFF_IN  
IN to VT  
VREF_AC  
IN/nIN  
1.28  
VCC – 1.4  
VCC – 1.3  
VCC – 1.2  
NOTE 1: Refer to Parameter Measurement Information, Input Voltage Swing Diagram.  
Table 2C. CML DC Characteristics, VCC = 2.375V to 3.63V, VEE = 0V, TA = -40°C to 85°C  
Symbol  
VOH  
Parameter  
Test Conditions  
Minimum  
VCC – 0.020  
325  
Typical  
VCC – 0.010  
400  
Maximum  
Units  
V
Output High Voltage; NOTE 1  
Output Voltage Swing  
VCC  
VOUT  
mV  
mV  
VDIFF_OUT Differential Output Voltage Swing  
ROUT Output Source Impedance  
650  
800  
40  
50  
60  
NOTE 1: Outputs terminated with 50to VCC  
.
AC Electrical Characteristics  
Table 3. AC Characteristics, VCC = 2.375V to 3.63V, VEE = 0V, TA = -40°C to 85°C  
Symbol Parameter  
fOUT Output Frequency  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
2
GHz  
Propagation Delay, Differential;  
NOTE 1  
tPD  
275  
525  
ps  
tsk(o)  
Output Skew; NOTE 2, 4  
25  
ps  
ps  
tsk(pp)  
Part-to-Part Skew; NOTE 3, 4  
250  
Buffer Additive Phase Jitter, RMS;  
refer to Additive Phase Jitter Section  
155.52MHz @ 3.3V, Integration  
Range: 12kHz – 20MHz  
tjit  
0.042  
ps  
ps  
tR / tF  
Output Rise/Fall Time  
20% to 80%  
60  
200  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when device is  
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. Device will meet specifications after thermal equilibrium  
has been reached under these conditions.  
All parameters characterized at 1.2GHz unless otherwise noted.  
NOTE 1: Measured from the differential input crossing point to the differential output crossing point.  
NOTE 2: Defined as skew between outputs at the same supply voltage, same temperature, same frequency and with equal load conditions.  
Measured at the output differential cross points.  
NOTE 3: Defined as skew between outputs on different devices operating at the same supply voltages and with equal load conditions. Using  
the same type of inputs on each device, the outputs are measured at the differential cross points.  
NOTE 4: This parameter is defined in accordance with JEDEC Standard 65.  
© Integrated Device Technology, Inc.  
3
September 19, 2017  
ICS858S011I Datasheet  
Additive Phase Jitter  
The spectral purity in a band at a specific offset from the fundamental  
compared to the power of the fundamental is called the dBc Phase  
Noise. This value is normally expressed using a Phase noise plot  
and is most often the specified plot in many applications. Phase noise  
is defined as the ratio of the noise power present in a 1Hz band at a  
specified offset from the fundamental frequency to the power value of  
the fundamental. This ratio is expressed in decibels (dBm) or a ratio  
of the power in the 1Hz band to the power in the fundamental. When  
the required offset is specified, the phase noise is called a dBc value,  
which simply means dBm at a specified offset from the fundamental.  
By investigating jitter in the frequency domain, we get a better  
understanding of its effects on the desired application over the entire  
time record of the signal. It is mathematically possible to calculate an  
expected bit error rate given a phase noise plot.  
Additive Phase Jitter @ 155.52MHz  
12kHz to 20MHz = 0.042ps (typical)  
Offset from Carrier Frequency (Hz)  
As with most timing specifications, phase noise measurements has  
issues relating to the limitations of the equipment. Often the noise  
floor of the equipment is higher than the noise floor of the device. This  
is illustrated above. The device meets the noise floor of what is  
shown, but can actually be lower. The phase noise is dependent on  
the input source and measurement equipment.  
The source generator “Rohde & Schwarz SMA100A Low Noise  
Signal Generator as external input to an Agilent 8133A 3GHz Pulse  
Generator”.  
© Integrated Device Technology, Inc.  
4
September 19, 2017  
ICS858S011I Datasheet  
Parameter Measurement Information  
VCC  
0V  
SCOPE  
Qx  
nIN  
IN  
V
V
CC  
EE  
Power  
Supply  
VIN  
VIH  
Cross Points  
CML Driver  
VIL  
-2.375V to -3.63V  
VEE  
CML Output Load AC Test Circuit  
Differential Input Level  
nQx  
Qx  
Part 1  
nQx  
Qx  
nQy  
Qy  
Part 2  
nQy  
Qy  
tsk(pp)  
Part-to-Part Skew  
Output Skew  
nIN  
IN  
VDIFF_IN, VDIFF_OUT  
VIN, VOUT  
800mV  
(typical)  
nQ0, nQ1  
400mV  
(typical)  
Q0, Q1  
tPD  
Single-ended & Differential Input Voltage Swing  
Propagation Delay  
© Integrated Device Technology, Inc.  
5
September 19, 2017  
ICS858S011I Datasheet  
Parameter Measurement Information, continued  
nQ0, nQ1  
Q0, Q1  
Output Rise/Fall Time  
Applications Information  
Recommendations for Unused Output Pins  
Outputs:  
CML Outputs  
All unused CML outputs can be left floating. We recommend that  
there is no trace attached. Both sides of the differential output pair  
should either be left floating or terminated.  
© Integrated Device Technology, Inc.  
6
September 19, 2017  
ICS858S011I Datasheet  
3.3V LVPECL Input with Built-In 50Termination Interface  
The IN /nIN with built-in 50terminations accept LVDS, LVPECL,  
CML, SSTL and other differential signals. Both differential inputs  
must meet the VPP and VCMR input requirements. Figures 1A to 1E  
show interface examples for the IN /nIN input with built-in 50  
terminations driven by the most common driver types. The input  
interfaces suggested here are examples only. If the driver is from  
another vendor, use their termination recommendation. Please  
consult with the vendor of the driver component to confirm the driver  
termination requirements.  
Figure 1A. IN/nIN Input with Built-In 50  
Figure 1B. IN/nIN Input with Built-In 50  
Driven by an LVDS Driver  
Driven by an LVPECL Driver  
3.3V  
3.3V  
3.3V CML with  
Built-In Pullup  
Zo = 50Ω  
Zo = 50Ω  
C1  
C2  
IN  
50Ω  
50Ω  
VT  
nIN  
V_REF_AC  
Receiver with  
Built-In 50Ω  
Figure 1C. IN/nIN Input with Built-In 50  
Figure 1D. IN/nIN Input with Built-In 50  
Driven by a CML Driver with Open Collector  
Driven by a CML Driver with Built-In 50  
Pullup  
3.3V  
3.3V  
Zo = 50Ω  
Zo = 50Ω  
R1  
R2  
25  
25  
IN  
VT  
nIN  
Receiver  
With  
SSTL  
Built-In  
50Ω  
Figure 1E. IN/nIN Input with Built-In 50  
Driven by an SSTL Driver  
© Integrated Device Technology, Inc.  
7
September 19, 2017  
ICS858S011I Datasheet  
2.5V LVPECL Input with Built-In 50Termination Interface  
The IN /nIN with built-in 50terminations accept LVDS, LVPECL,  
CML, SSTL and other differential signals. Both differential inputs  
must meet the VPP and VCMR input requirements. Figures 2A to 2E  
show interface examples for the IN /nIN with built-in 50termination  
input driven by the most common driver types. The input interfaces  
suggested here are examples only. If the driver is from another  
vendor, use their termination recommendation. Please consult with  
the vendor of the driver component to confirm the driver termination  
requirements.  
Figure 2A. IN/nIN Input with Built-In 50  
Figure 2B. IN/nIN Input with Built-In 50  
Driven by an LVDS Driver  
Driven by an LVPECL Driver  
Figure 2C. IN/nIN Input with Built-In 50  
Figure 2D. IN/nIN Input with Built-In 50Driven by a  
CML Driver with Built-In 50Pullup  
Driven by a CML Driver  
2.5V  
2.5V  
Zo = 50Ω  
Zo = 50Ω  
R1  
R2  
25Ω  
25Ω  
IN  
VT  
nIN  
Receiver  
With  
SSTL  
Built-In  
50Ω  
Figure 2E. IN/nIN Input with Built-In 50  
Driven by an SSTL Driver  
© Integrated Device Technology, Inc.  
8
September 19, 2017  
ICS858S011I Datasheet  
Schematic Example  
Figure 3 shows a schematic example of the ICS858S011I. This  
schematic provides examples of input and output handling. The  
ICS858S011I input has built-in 50termination resistors. The input  
can directly accept various types of differential signal without AC  
couple. If AC couple termination is used, the ICS858S011I also  
provides VREF_AC pin for proper offset level after AC couple. This  
example shows the ICS858S011I input driven by a 3.3V LVPECL  
driver. The ICS858S011I outputs are CML driver with built-in 50  
pullup resistors. In this example, we assume the traces are long  
transmission line and the receiver is high input impedance without  
built-in matched load. An external 100resistor across the receiver  
input is required.  
Figure 3. ICS858S011I Application Schematic Example  
© Integrated Device Technology, Inc.  
9
September 19, 2017  
ICS858S011I Datasheet  
VFQFN EPAD Thermal Release Path  
In order to maximize both the removal of heat from the package and  
the electrical performance, a land pattern must be incorporated on  
the Printed Circuit Board (PCB) within the footprint of the package  
corresponding to the exposed metal pad or exposed heat slug on the  
package, as shown in Figure 4. The solderable area on the PCB, as  
defined by the solder mask, should be at least the same size/shape  
as the exposed pad/slug area on the package to maximize the  
thermal/electrical performance. Sufficient clearance should be  
designed on the PCB between the outer edges of the land pattern  
and the inner edges of pad pattern for the leads to avoid any shorts.  
and dependent upon the package power dissipation as well as  
electrical conductivity requirements. Thus, thermal and electrical  
analysis and/or testing are recommended to determine the minimum  
number needed. Maximum thermal and electrical performance is  
achieved when an array of vias is incorporated in the land pattern. It  
is recommended to use as many vias connected to ground as  
possible. It is also recommended that the via diameter should be 12  
to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is  
desirable to avoid any solder wicking inside the via during the  
soldering process which may result in voids in solder between the  
exposed pad/slug and the thermal land. Precautions should be taken  
to eliminate any solder voids between the exposed heat slug and the  
land pattern. Note: These recommendations are to be used as a  
guideline only. For further information, please refer to the Application  
Note on the Surface Mount Assembly of Amkor’s Thermally/  
Electrically Enhance Leadframe Base Package, Amkor Technology.  
While the land pattern on the PCB provides a means of heat transfer  
and electrical grounding from the package to the board through a  
solder joint, thermal vias are necessary to effectively conduct from  
the surface of the PCB to the ground plane(s). The land pattern must  
be connected to ground through these vias. The vias act as “heat  
pipes”. The number of vias (i.e. “heat pipes”) are application specific  
SOLDER  
PIN  
SOLDER  
EXPOSED HEAT SLUG  
PIN  
PIN PAD  
GROUND PLANE  
LAND PATTERN  
(GROUND PAD)  
PIN PAD  
THERMAL VIA  
Figure 4. P.C. Assembly for Exposed Pad Thermal Release Path – Side View (drawing not to scale)  
© Integrated Device Technology, Inc.  
10  
September 19, 2017  
ICS858S011I Datasheet  
Power Considerations  
This section provides information on power dissipation and junction temperature for the ICS858S011I.  
Equations and example calculations are also provided.  
1. Power Dissipation.  
The total power dissipation for the ICS858S011I is the sum of the core power plus the power dissipation in the load(s).  
The following is the power dissipation for VDD= 3.3V + 10% = 3.63V, which gives worst case results.  
NOTE: Please refer to Section 3 for details on calculating power dissipation in the load.  
Power (core)MAX = VDD_MAX * IDD = 3.63V * 57mA = 206.9mW  
Power Dissipation for internal termination RT  
Power (RT)MAX = 4 * (VIN_MAX)2 / RT_MIN = (1.2V)2 / 80= 72mW  
Total Power_MAX = 206.9mW + 72mW = 278.9mW  
2. Junction Temperature.  
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad, and directly affects the reliability of the device. The  
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond  
wire and bond pad temperature remains below 125°C.  
The equation for Tj is as follows: Tj = JA * Pd_total + TA  
Tj = Junction Temperature  
JA = Junction-to-Ambient Thermal Resistance  
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)  
TA = Ambient Temperature  
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and  
a multi-layer board, the appropriate value is 74.7°C/W per Table 4 below.  
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:  
85°C + 0.279W * 74.7°C/W = 105.8°C. This is well below the limit of 125°C.  
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of  
board (multi-layer).  
Table 4. Thermal Resistance JA for 16 Lead VFQFN, Forced Convection  
JA by Velocity  
0
Meters per Second  
1
2.5  
Multi-Layer PCB, JEDEC Standard Test Boards  
74.7°C/W  
65.3°C/W  
58.5°C/W  
Reliability Information  
Table 5. JA vs. Air Flow Table for a 16 Lead VFQFN  
JA vs. Air Flow  
Meters per Second  
0
1
2.5  
Multi-Layer PCB, JEDEC Standard Test Boards  
74.7°C/W  
65.3°C/W  
58.5°C/W  
Transistor Count  
The transistor count for ICS858S011I is: 216  
Pin Compatible with 858011  
© Integrated Device Technology, Inc.  
11  
September 19, 2017  
ICS858S011I Datasheet  
Package Outline Drawings  
The package outline drawings are located in the last section of this document. The package information is the most current data available and  
is subject to change without notice or revision of this document.  
Ordering Information  
Table 7. Ordering Information  
Part/Order Number  
858S011AKILF  
858S011AKILFT  
Marking  
011A  
011A  
Package  
“Lead-Free” 16 Lead VFQFN  
“Lead-Free” 16 Lead VFQFN  
Shipping Packaging  
Tube  
2500 Tape & Reel  
Temperature  
-40C to 85C  
-40C to 85C  
NOTE: Parts that are ordered with an “LF” suffix to the part number are the Pb-Free configuration and are RoHS compliant.  
Revision History  
Revision Date  
September 19, 2017  
October 12, 2010  
Description of Change  
Updated the package outline drawings; however, no mechanical changes  
Completed other minor improvements  
Initial release.  
Corporate Headquarters  
6024 Silver Creek Valley Road  
San Jose, CA 95138 USA  
www.IDT.com  
Sales  
Tech Support  
www.IDT.com/go/support  
1-800-345-7015 or 408-284-8200  
Fax: 408-284-2775  
www.IDT.com/go/sales  
DISCLAIMER Integrated Device Technology, Inc. (IDT) and its affiliated companies (herein referred to as “IDT”) reserve the right to modify the products and/or specifications described herein at any time, without  
notice, at IDT’s sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed  
in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any  
particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual  
property rights of IDT or any third parties.  
IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably  
expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.  
Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of  
IDT or their respective third party owners. For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary. Integrated Device Technology, Inc. All rights reserved.  
© Integrated Device Technology, Inc.  
12  
September 19, 2017  

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