HY628400ALR2-E_技术文档

HY628400A Series

512Kx8bit CMOS SRAM

Document Title

512K x8 bit 5.0V Low Power CMOS slow SRAM

Revision History

Revision No History

Draft Date

Remark

Final

04

05

Revision History Insert

Jul.06.2000

Revised

Aug.04.2000

Dec.04.2000

Final

- Change Iccdr Value : 15uA => 20uA

06

Marking Information Add

Revised

-

E.T (-25~85°C), I.T (-40~85°C) Part Insert

AC Test Condition Add : 5pF Test Load

07

Changed Logo

Apr.30.2001

Final

-

HYUNDAI -> hynix

-

Marking Information Change

This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

for use of circuits described. No patent licenses are implied.

Rev 07 / Apr. 2001

Hynix Semiconductor

HY628400A Series

DESCRIPTION

FEATURES

The HY628400A is a high-speed, low power and

4M bits CMOS SRAM organized as 512K words

by 8 bits. The HY628400A uses Hynix's high

performance twin tub CMOS process technology

and was designed for high-speed and low power

circuit technology. It is particularly well suited for

use in high-density and low power system

applications. This device has a data retention

mode that guarantees data to remain valid at the

minimum power supply voltage of 2.0V.

·

Fully static operation and Tri-state outputs

TTL compatible inputs and outputs

Low power consumption

Battery backup(L/LL-part)

-. 2.0V(min) data retention

Standard pin configuration

-. 32pin 525mil SOP

·

-. 32pin 400mil TSOP-II

(Standard and Reversed)

Product

No.

HY628400A

HY628400A-E 4.5~5.5 55/70/85

HY628400A-I 4.5~5.5 55/70/85

Voltage

(V)

4.5~5.5 55/70/85

Speed

(ns)

Operation

Current/Icc(mA)

Standby Current(uA)

Temperature

(°C)

L

LL

30

50

10

100

0~70

-25~85

-40~85

Note 1. Current value is max.

PIN CONNECTION

A18

A16

A14

A12

A7

Vcc

A15

A17

/WE

A13

A8

A18

A16

A14

A12

A7

Vcc

A15

A17

/WE

A13

A8

Vcc

A15

A17

/WE

A13

A8

A18

A16

A14

A12

A7

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

A6

6

A5

A9

A5

A9

A5

7

A11

/OE

A10

/CS

I/O8

I/O7

I/O6

I/O5

I/O4

A4

A11

/OE

A10

/CS

I/O8

I/O7

I/O6

I/O5

I/O4

A11

/OE

A10

/CS

I/O8

I/O7

I/O6

I/O5

I/O4

A4

8

A3

9

A2

10

11

12

13

14

15

16

10

11

12

13

14

15

16

10

11

12

13

14

15

16

A1

A0

I/O1

I/O2

I/O3

Vss

I/O1

I/O2

I/O3

Vss

I/O1

I/O2

I/O3

Vss

SOP

TSOP-II(Standard)

TSOP-II(Reversed)

PIN DESCRIPTION

BLOCK DIAGRAM

Pin Name

Pin Function

Chip Select

Write Enable

ROW DECODER

A0

I/O1

/CS

/WE

/OE

Output Enable

Address Inputs

Data Inputs/Outputs

Power(4.5~5.5V)

Ground

A0 ~ A18

I/O1 ~ I/O8

Vcc

MEMORY ARRAY

512Kx 8

Vss

I/O8

A18

/CS

/OE

/WE

Rev 07 / Apr. 2001

2

HY628400A Series

ORDERING INFORMATION

Part No.

HY628400ALG

Speed

Power

L-part

LL-part

L-part

LL-part

L-part

LL-part

L-part

LL-part

L-part

LL-part

L-part

LL-part

L-part

LL-part

L-part

Temp

0-70°C

-25-85°C

-40-85°C

0-70°C

Package

55/70/85

SOP

HY628400ALLG

HY628400ALG-E

HY628400ALLG-E

HY628400ALG-I

HY628400ALLG-I

HY628400ALT2

HY628400ALLT2

HY628400ALT2-E

HY628400ALLT2-E

HY628400ALT2-I

HY628400ALLT2-I

HY628400ALR2

HY628400ALLR2

HY628400ALR2-E

HY628400ALLR2-E

HY628400ALR2-I

HY628400ALLR2-I

TSOP-II (Standard)

TSOP-II (Reversed)

0-70°C

-25-85°C

-40-85°C

0-70°C

-25-85°C

-40-85°C

LL-part

L-part

LL-part

ABSOLUTE MAXIMUM RATING (1)

Symbol

Vcc, VIN, VOUT

TA

Parameter

Power Supply, Input/Output Voltage

Rating

-0.5 to 7.0

0 to 70

-25 to 85

-40 to 85

-65 to 150

1.0

Unit

V

Operating Temperature

HY628400A

HY628400A-E

HY628400A-I

°C

W

TSTG

PD

Storage Temperature

Power Dissipation

IOUT

Data Output Current

50

MA

TSOLDER

Lead Soldering Temperature & Time

260 ·10

°C·sec

Note

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is stress rating only and the functional operation of the device under these or

any other conditions above those indicated in the operation of this specification is not implied.

Exposure to the absolute maximum rating conditions for extended period may affect reliablity.

TRUTH TABLE

/CS

H

L

/WE /OE

MODE

Deselected

Output Disabled

Read

I/O OPERATION

High-Z

Power

Standby

Active

X

H

L

X

H

L

High-Z

Data Out

Data In

X

Write

Note :

1. H=VIH, L=VIL, X=don't care (VIH or VIL)

Rev 07 / Apr. 2001

2

HY628400A Series

RECOMMENDED DC OPERATING CONDITION

TA = 0¡ Éto 70¡ (ÉNormal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.

Symbol

Vcc

Vss

VIH

VIL

Parameter

Supply Voltage

Ground

Input High Voltage

Input Low Voltage

Min.

4.5

0

2.2

-0.5(1)

Typ.

5.0

0

-

Max.

5.5

0

Vcc+0.5

0.8

Unit

V

Note :

1. VIL = -1.5V for pulse width less than 30ns and not 100% tested.

DC ELECTRICAL CHARACTERISTICS

TA = 0¡ Éto 70¡ (ÉNormal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.

Symbol

ILI

ILO

Parameter

Input Leakage Current

Output Leakage Current

Test Condition

Vss < VIN < Vcc

Vss < VOUT < Vcc, /CS = VIH or

/OE = VIH or /WE = VIL

/CS = VIL,

Min.

-1

Typ. Max. Unit

-

1

UA

Icc

Operating Power Supply

Current

Average Operating Current

-

10

60

MA

VIN = VIH or VIL, II/O = 0mA

/CS = VIL

ICC1

Min Duty Cycle = 100%,

VIN = VIH or VIL, II/O = 0mA

/CS = VIH

ISB

TTL Standby Current

(TTL Input)

-

2

MA

VIN = VIH or VIL

ISB1

Standby Current

(CMOS Input)

/CS > Vcc - 0.2V,

VIN > Vcc - 0.2V or

VIN < Vss + 0.2V

L

LL

L-E/I

LL-E/I

-

100

30

100

50

0.4

-

uA

V

VOL

VOH

Output Low Voltage

Output High Voltage

IOL = 2.1mA

IOH = -1mA

2.4

V

Note : Typical values are at Vcc = 5.0V, TA = 25°C

CAPACITANCE

Temp = 25°C, f= 1.0MHz

Symbol

CIN

COUT

Parameter

Input Capacitance

Output Capacitance

Condition

VIN = 0V

VI/O = 0V

Max.

6

8

Unit

pF

Note : This parameter is sampled and not 100% tested

Rev 07 / Apr. 2001

3

HY628400A Series

AC CHARACTERISTICS

TA = 0¡ Éto 70¡ (ÉNormal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.

55ns

70ns

Max. Min

85ns

Max.

#

Symbol

Parameter

Unit

Min. Max. Min.

READ CYCLE

1

2

3

4

5

6

7

8

9

tRC

tAA

tACS

tOE

tCLZ

tOLZ

tCHZ

tOHZ

tOH

Read Cycle Time

Address Access Time

Chip Select Access Time

Output Enable to Output Valid

Chip Select to Output in Low Z

Output Enable to Output in Low Z

Chip Deselecting to Output in High Z

Out Disable to Output in High Z

Output Hold from Address Change

55

-

10

5

0

10

-

70

-

10

5

0

10

-

85

-

10

5

0

10

-

ns

55

25

-

70

40

-

85

45

-

20

-

25

-

30

-

WRITE CYCLE

10 tWC

11 tCW

12 tAW

13 tAS

14 tWP

15 tWR

16 tWHZ

17 tDW

18 tDH

19 tOW

Write Cycle Time

55

45

0

40

0

25

0

-

20

-

70

60

0

50

0

30

0

-

25

-

85

70

0

55

0

40

0

-

30

-

ns

Chip Selection to End of Write

Address Valid to End of Write

Address Set-up Time

Write Pulse Width

Write Recovery Time

Write to Output in High Z

Data to Write Time Overlap

Data Hold from Write Time

Output Active from End of Write

5

AC TEST CONDITIONS

TA = 0¡ Éto 70¡ (ÉNormal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.

Parameter Value

Input Pulse Level

Input Rise and Fall Time

0.8V to 2.4V

5ns

Input and Output Timing Reference Level

1.5V

Output Load

tCLZ,tOLZ,tCHZ,tOHZ,tWHZ

Others

CL = 5pF + 1TTL Load

CL = 100pF + 1TTL Load

AC TEST LOADS

TTL

CL(1)

Note

1. Including jig and scope capacitance

Rev 07 / Apr. 2001

4

HY628400A Series

TIMING DIAGRAM

READ CYCLE 1(Note 1,4)

tRC

ADDR

/CS

tAA

tACS

tOH

tCHZ(3)

tOE

/OE

tOLZ(3)

tOHZ(3)

tCLZ(3)

Data

High-Z

Out

Data Valid

READ CYCLE 2(Note 1,2,4)

tRC

ADDR

tAA

tOH

Data

Out

Previous Data

Data Valid

READ CYCLE 3(Note 1,2,4)

/CS

tACS

tCLZ(3)

tCHZ(3)

Data

Out

Data Valid

Notes:

1. A read occurs during the overlap of a low /OE, a high /WE and a low /CS.

2. /OE = VIL

3. Transition is measured + 200mV from steady state voltage.

This parameter is sampled and not 100% tested.

4. /CS in high for the standby, low for active

Rev 07 / Apr. 2001

5

HY628400A Series

WRITE CYCLE 1(1,4,5,8) (/WE Controlled)

tWC

tCW

ADDR

tWR(2)

/CS

tAW

/WE

tWP

tAS

tDW

Data Valid

tDH

Data In

High-Z

(5)

(6)

tWHZ(3,7)

tOW

Data

Out

WRITE CYCLE 2 (Note 1,4,5,8) (/CS Controlled)

tWC

ADDR

tCW

tAS

tWR(2)

/CS

tAW

tWP

/WE

tDW

Data Valid

tDH

High-Z

Data In

High-Z

Data

Out

Rev 07 / Apr. 2001

6

HY628400A Series

Notes:

1. A write occurs during the overlap of a low /WE and a low /CS.

2. tWR is measured from the earlier of /CS or /WE going high to the end of write cycle.

3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the

output must not be applied.

4. If the /CS low transition occur simultaneously with the /WE low transition or after the

/WE transition, outputs remain in a high impedance state.

5. Q(data out) is the same phase with the write data of this write cycle.

6. Q(data out) is the read data of the next address.

7. Transition is measured + 200mV from steady state.

This parameter is sampled and not 100% tested.

8. /CS in high for the standby, low for active

DATA RETENTION ELECTRIC CHARATERISTIC

TA = 0¡ Éto 70¡ (ÉNormal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.

Symbol

VDR

Parameter

Vcc for Data Retention

Test Condition

/CS > Vcc - 0.2V,

VIN > Vcc - 0.2V or VIN < Vss + 0.2V

Min

2.0

Typ Max Unit

-

V

ICCDR

Data Retention Current

Vcc = 3.0V,

L

LL

L-E/I

LL-E/I

-

0

-

50

20

50

30

-

uA

ns

/CS1>Vcc - 0.2V,

VIN > Vcc - 0.2V or

VIN < Vss + 0.2V

tCDR

tR

Chip Deselect to Data

Retention Time

Operating Recovery Time

tRC

(2)

-

ns

Notes:

1. Typical values are at the condition of TA = 25°C.

2. tRC is read cycle time.

DATA RETENTION TIMING DIAGRAM

DATA RETENTION MODE

VCC

4.5V

tCDR

tR

2.2V

VDR

/CS > VCC-0.2V

/CS

VSS

Rev 07 / Apr. 2001

7

HY628400A Series

PACKAGE INFORMATION

32pin 400mil Thin Small Outline Package Standard(T2)

MAX.

0.404(10.2620)

0.396(10.0580()

UNIT : INCH(mm)

MIN.

0.470(11.9380)

0.462(11.7350)

0.829(21.0570)

0.822(20.8790)

GAGE PLANE

BASE PLANE

0-5

0.0235(0.5970)

0.0160(0.4060)

0.050BSC

(1.2700)

0.017(0.4500)

0.012(0.3050)

SEATING PLANE

0.0059(0.1500)

0.0020(0.0500)

0.0083(0.2100)

0.0047(0.1200)

0.047(1.1940)

0.039(0.9910)

32pin 400mil Thin Small Outline Package Reversed(R2)

MAX.

0.404(10.2620)

0.396(10.0580)

UNIT : INCH(mm)

MIN.

0.470(11.9380)

0.462(11.7350)

0.829(21.0570)

0.822(20.8790)

GAGE PLANE

BASE PLANE

0-5

0.0235(0.5970)

0.0160(0.4060)

0.0083(0.2100)

0.0047(0.1200)

0.050 BSC

(1.2700)

0.017(0.4500)

0.012(0.3050)

SEATING PLANE

0.0059(0.1500)

0.0020(0.0500)

0.047(1.1940)

0.039(0.9910)

Rev 07 / Apr. 2001

8

HY628400A Series

32pin 525mil Small Outline Package(G)

UNIT : INCH(mm)

0.444(11.278)

0.438(11.125)

0.564(14.326)

0.810(20.574)

0.804(20.422)

0.546(13.868)

0.109(2.769)

0.0125(0.318)

0.0061(0.155)

0.099(2.515)

0.011(0.279)

0.004(0.102)

0 deg

8 deg

0.0425(1.080)

0.0235(0.597)

0.020(0.508)

0.014(0.356)

0.050(1.27)BSC

Rev 07 / Apr. 2001

9

HY628400A Series

MARKING INFORMATION

Package

Marking Example

h

y

Y

y

n

6

i

x

8

p

K

O

R

E

A

H

2

w

4

0

A

c

SOP

y

w

c

G

K

-

s

t

h

y

Y

y

n

6

i

x

8

p

O

R

E

A

H

2

w

4

0

c

A

c

TSOP-II

y

w

T

2

-

s

t

Index

• hynix

• KOREA

• HY628400A

• yy

• ww

• p

: hynix Logo

: Origin Country

: Part Name

: Year ( ex : 00 = year 2000, 01 = year 2001 )

: Work Week ( ex : 12 = ww12 )

: Process Code

• cc

: Power Consumption

- L

: Low Power

- LL

: Low Low Power

• G / T2

: Package Type

- G

: SOP

- T2

: TSOP-II

ss

t

•

: Speed

- 55

- 70

: 55ns

: 70ns

: Temperature

- Blank

°

: Commercial ( 0 ~ 70 C )

°

: Extended ( -25 ~ 85 C )

- E

- I

°

: Industrial ( -40 ~ 85 C )

Note

- Capital Letter

- Small Letter

: Fixed Item

: Non-fixed Item (Except hynix)

Rev 07 / Apr. 2001

10


型号：	HY628400ALR2-E
厂家：	HYNIX SEMICONDUCTOR
描述：	512K x8 bit 5.0V Low Power CMOS slow SRAM 512K ×8位5.0V低功耗CMOS SRAM慢静态存储器
文件：	总11页 (文件大小：182K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HY628400ALR2-E [HYNIX]

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