HFU2N60 [HUASHAN]
N-Channel MOSFET; N沟道MOSFET
| 型号： | HFU2N60 |
| 厂家： | 
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
| 描述： | N-Channel MOSFET |
| 文件： | 总5页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-Channel MOSFET
Shantou Huashan Electronic Devices Co.,Ltd.
HFU2N60
█ APPLICATIONSL
TO-251
High-Speed Switching.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg — — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj — — Operating Junction Temperature ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PD — — Allowable Power Dissipation（Tc=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 44W
VDSS — — Drain-Source Voltage ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 600V
VGSS — — Gate-Source Voltage ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ±30V
ID — — Drain Curren（t Tc=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1.8A
1―G
2―D
3―S
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source Leakage Current
Gate Threshold Voltage
600
V
ID=250μA ,VGS=0V
10 μA VDS =600V，VGS=0
IGSS
±100 nA VGS=±30V , VDS =0V
2.5
4.5
V
VDS = VGS , ID =250μA
VGS=10V, ID =1.0A
VGS(th)
RDS(on) Static Drain-Source On-Resistance
3.8 5.0 Ω
gfs
Forward Transconductance
Input Capacitance
S
VDS = 40V , ID =1.0A
*
2.05
Ciss
pF
180 235
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Rise Time
VDS =25V, VGS=0,f=1MHz
Coss
20
4.3
9
25
3
pF
pF
nS
nS
nS
nS
nC
nC
nC
A
Crss
td(on)
28
60
58
66
12
VDD =300V,
ID =2A
RG= 25 Ω
tr
td(off)
tf
25
24
28
8.5
1.3
4.1
Turn - Off Delay Time
Fall Time
*
VDS =480V
Qg
Qgs
Qgd
Is
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VGS=10V
ID=2A
*
Continuous Source Current
Diode Forward Voltage
1.8
1.4
VSD
IS =1.8A , VGS=0
V
Thermal Resistance，
Junction-to-Case
℃/W
Rth（j-c）
2.87
*Pulse Test：Pulse Width≤ 300μs，Duty Cycle≤ 2%
N-Channel MOSFET
Shantou Huashan Electronic Devices Co.,Ltd.
HFU2N60
N-Channel MOSFET
Shantou Huashan Electronic Devices Co.,Ltd.
HFU2N60
N-Channel MOSFET
Shantou Huashan Electronic Devices Co.,Ltd.
HFU2N60
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HFU2N60
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