2SC2715 [HTSEMI]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | 2SC2715 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总4页 (文件大小：1090K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2715
SOT-23
TRANSISTOR (NPN)
FEATURES
1. BASE
2. EMITTER
3. COLLECTOR
z
z
High Power Gain
Recommended for FM IF,OSC Stage and AM CONV. IF Stage.
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
35
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
4
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
50
mA
mW
℃
PC
350
150
-55-150
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
IC=10μA, IE=0
IC=1mA, IB=0
IE=10μA, IC=0
VCB=35V, IE=0
VEB=4V, IC=0
conditions
MIN
35
30
4
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
V
μA
μA
0.1
0.1
240
0.4
1
IEBO
DC current gain
hFE(1)
VCE=12V, IC=2mA
40
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
V
V
IC=10mA, IB=1mA
IC=10mA, IB=1mA
100
27
400
33
MHz
dB
VCE=10V, IC=1mA
Power Gain
Gpe
VCE=6V, IC=1mA, f=10.7MHZ
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
40-80
70-140
RO1
120-240
Range
Marking
RR1
RY1
1
JinYu
semiconductor
www.htsemi.com
2SC2715
2
JinYu
semiconductor
www.htsemi.com
2SC2715
3
JinYu
semiconductor
www.htsemi.com
2SC2715
4
JinYu
semiconductor
www.htsemi.com
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