HMC392 [HITTITE]
GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz; 砷化镓MMIC低噪声放大器， 3.5 - 7.0 GHz的
| 型号： | HMC392 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz |
| 文件： | 总6页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC392
v00.1002
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Typical Applications
Features
1
The HMC392 is ideal for use as a low noise
amplifier for:
Gain: 15.5 dB
Noise Figure: 2.4 dB
• Point to Point Radios
• VSAT
Single Supply Voltage: +5.0V
50 Ohm Matched Input/Output
No External Components Required
Small Size: 1.3 mm x 1.0 mm x 0.1 mm
• LO Driver for HMC Mixers
• Military EW, ECM, C3I
• Space
Functional Diagram
General Description
The HMC392 is a GaAs MMIC Low Noise
Amplifier die which operates between 3.5 and 7.0
GHz. The amplifier provides 15.5 dB of gain, 2.4
dB noise figure, and 28 dBm IP3 from a +5.0V
supply voltage. The HMC392 has six bonding
adjustment options which allow the user to select
the bias point and output power of the device (+15
to +18 dBm). The HMC392 amplifier can easily
be integrated into Multi-Chip-Modules (MCMs)
due to its small (1.3 mm2) size. All data is with
the chip in a 50 Ohm test fixture connected via
0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Electrical Specifications,TA = +25° C, Vdd = 5V
Parameter
Min.
Typ.
4.0 - 6.0
15.5
0.018
2.4
Max.
Min.
11.5
Typ.
3.5 - 7.0
14
Max.
Units
GHz
dB
Frequency Range
Gain
13
Gain Variation Over Temperature
Noise Figure
0.025
3.0
0.018
2.8
0.025
3.4
dB/ °C
dB
Input Return Loss
15
10
dB
Output Return Loss
15
10
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
13
25
16
12
23
16
dBm
dBm
dBm
mA
18
18
28
28
50
50
Note: Data taken with pads PS4 and PS8 bonded to ground (state 5) unless otherwise noted.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 30
v00.1002
HMC392
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
GaAs MMIC SUB-HARMONICALLY GPaUinMvPs.ETDemMpeIrXaEtuRre 17 - 25 GHz
Broadband Gain & Return Loss
1
20
15
10
5
20
19
18
17
16
15
14
13
12
11
10
9
S21
S11
S22
0
-5
+25C
+85C
-55C
-10
-15
-20
-25
8
7
6
5
2
3
4
5
6
7
8
9
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs.Temperature
Output Return Loss vs.Temperature
0
0
+25C
+25C
+85C
-55C
-5
-5
-10
-15
-20
-25
+85C
-55C
-10
-15
-20
-25
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs.Temperature
Reverse Isolation vs.Temperature
5
4.5
4
0
+25C
-10
+85C
-55C
3.5
3
-20
2.5
2
-30
-40
-50
-60
1.5
1
+25C
+85C
-55C
0.5
0
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 31
HMC392
v00.1002
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
P1dB vs.Temperature
Psat vs.Temperature
1
22
21
20
19
18
17
16
15
14
13
12
11
10
22
21
20
19
18
17
16
15
14
+25C
+85C
-55C
+25C
13
+85C
12
-55C
11
10
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Noise Figure & Power vs.
Supply Voltage @ 5.5 GHz
Output IP3 vs.Temperature
32
31
30
29
28
27
26
25
24
23
22
21
20
20
19
18
17
16
15
14
13
12
11
10
9
Gain
Noise Figure
P1dB
8
7
6
+25C
+85C
-55C
5
4
3
2
1
0
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
4.5
4.75
5
5.25
5.5
FREQUENCY (GHz)
Vs (Vdc)
Gain & Noise Figure vs.
Power Select State
P1dB vs. Power Select State
22
21
20
19
18
17
16
15
14
13
12
11
10
18
16
14
Gain State 1
Gain State 2
Gain State 3
Gain State 4
Gain State 5
Gain State 6
NF State 1
NF State 2
NF State 3
NF State 4
NF State 5
NF State 6
12
10
8
6
State 1 Idd=75mA
State 2 Idd=62mA
State 3 Idd=55mA
State 4 Idd=65mA
State 5 Idd=50mA
State 6 Idd=46mA
4
2
0
3.5
4
4.5
5
5.5
6
6.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 32
HMC392
v00.1002
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
1
Drain Bias Voltage (Vdd)
+7.0 Vdc
Vdd (Vdc)
+4.5
Idd (mA)
RF Input Power (RFin)(Vdd = +5.0 Vdc) +15 dBm
49
50
51
Channel Temperature
175 °C
+5.0
Continuous Pdiss (T= 85 °C)
(derate 8.125 mW/°C above 85 °C)
+5.5
0.731 W
(State 5 Depicted)
Thermal Resistance
(channel to die bottom)
123 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85° C
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 33
HMC392
v00.1002
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Pad Descriptions
1
Pad Number
Function
Description
Interface Schematic
This pad is AC coupled and matched to 50 Ohms
from 3.5 to 7.0 GHz.
2
RF IN
Power Select
One of these pads must be connected to ground.
See Power Select Table for selection criteria.
3
4
PS3
PS4
Power Select
One of these pads must be connected to ground.
See Power Select Table for selection criteria.
7
8
9
PS7
PS8
PS9
Vdd,
Vdd (alt.)
Power supply voltage. Connect either pad1 or pad5 to +5V
supply. No choke inductor or bypass capacitor is needed.
1, 5
This pad is AC coupled and matched to 50 Ohms
from 3.5 to 7.0 GHz.
6
RF OUT
GND
Die
Bottom
Die bottom must be connected to RF/DC ground.
Power Select Table
State
Pads Bonded to Ground
PS3 & PS7
Typical Idd (mA)
Typical P1dB (dBm)
1
2
3
4
5
6
75
62
55
65
50
46
18.4
17.9
16.4
17.7
16.9
15.5
PS3 & PS8
PS3 & PS9
PS4 & PS7
PS4 & PS8
PS4 & PS9
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 34
HMC392
v00.1002
MICROWAVE CORPORATION
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Assembly Diagram
1
Note: State 5 shown. PS3 and PS7 bonded to ground.
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip
to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 35
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