HMC128 [HITTITE]
GaAs MMIC DOUBLE-BALANCED MIXER, 1.8 - 5.0 GHz; 砷化镓MMIC双平衡混频器， 1.8 - 5.0 GHz的
| 型号： | HMC128 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC DOUBLE-BALANCED MIXER, 1.8 - 5.0 GHz |
| 文件： | 总6页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC128
v02.0802
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
Typical Applications
Features
The HMC128 is ideal for:
• Microwave & VSAT Radios
• Test Equipment
Conversion Loss: 7 dB
LO to RF and IF Isolation: >36 dB
Input IP3: +18 dBm
• Military EW, ECM, C3I
Small Size, No DC Bias Required
• Space Telecom
Functional Diagram
General Description
The HMC128 is a miniature double-balanced
mixer chip that can be used as an upconverter
or downconverter. The device is a passive diode/
balun type mixer with high dynamic range. Noise
figure is essentially equal to the conversion loss.
The mixer can handle larger signal levels than
active mixers due to the high third order inter-
cept. MMIC implementation provides exceptional
balance in the circuit resulting in high LO/RF and
LO/IF isolations. This mixer can operate over a
wide LO Drive input of +9 to +15 dBm.
5
Electrical Specifications,TA = +25° C, LO Drive = +15 dBm
Parameter
Min.
Typ.
Max.
Units
GHz
GHz
dB
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
1.8 - 5.0
DC - 3.0
7
10
10
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
7
dB
35
27
15
45
5
42
36
18
50
10
dB
dB
IP3 (Input)
dBm
dBm
dBm
IP2 (Input)
1 dB Gain Compression (Input)
* Unless otherwise noted, all measurements performed as downconverter, IF = 100 MHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 - 2
v02.0802
HMC128
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
Conversion Gain vs .Temperature
@ LO = +15 dBm
Isolation @ LO = +15 dBm
0
0
-10
-5
RF/IF
LO/RF
-20
LO/IF
-10
-30
+ 25 C
+ 85 C
- 55 C
-40
-50
-60
-15
-20
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
5.5
5.5
6
5
Frequency (GHz)
FREQUENCY (GHz)
Conversion Gain vs. LO Drive
LO and RF Return Loss
0
0
-5
-5
-10
-10
+ 9 dBm
+ 11 dBm
+ 13 dBm
+ 15 dBm
RF
LO
-15
-20
-15
-20
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
2.5
3
3.5
4
4.5
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Upconverter Performance
Conversion Gain vs. LO Drive
IF Bandwidth @ LO = +15 dBm
0
0
-5
-10
-15
-5
-10
+ 9 dBm
+ 11 dBm
+ 13 dBm
+ 15 dBm
-15
-20
IF CONVERSION LOSS
IF RETURN LOSS
-20
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
4.5
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 - 3
HMC128
v02.0802
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
Input IP3 vs.Temperature
@ LO = +15 dBm
Input IP3 vs. LO Drive
30
30
+ 25 C
+ 85 C
- 55 C
+ 11 dBm
+ 13 dBm
+ 15 dBm
25
20
15
10
25
20
15
10
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input IP2 vs.Temperature
@ LO = +15 dBm
Input IP2 vs LO Drive
80
75
70
65
60
55
50
45
40
80
75
70
65
60
55
50
45
40
+ 11 dBm
+ 13 dBm
+ 15 dBm
+ 25 C
+ 85 C
- 55 C
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input P1dB vs.Temperature
@ LO = +15 dBm
15
14
13
12
11
10
9
+ 25 C
+ 85 C
- 55 C
8
7
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 - 4
v02.0802
HMC128
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
MxN Spurious @ IF Port
Harmonics of LO
nLO
nLO Spur @ RF Port
mRF
0
1
2
3
4
LO Freq. (GHz)
1
2
3
4
0
1
2
3
4
xx
5.6
0
30.3
23.3
57.8
74.3
>85
11.1
31.5
60.3
65.8
>85
34.5
29.1
75.8
74.3
>85
1.5
54
48
47
40
40
38
42
41
41
50
60
60
54
50
44
52
51
46
54
66
76
75
65
63
2.8
2.0
62.3
74.3
>85
58.6
>85
>85
2.5
3.5
4.5
RF Freq.= 3.5 GHz @ -10 dBm
LO Freq.= 3.4 GHz @ +13 dBm
5.5
5
All values in dBc below IF power level.
Measured as downconverter
LO = +13 dBm
All values in dBc below input LO level measured at RF port.
Absolute Maximum Ratings
LO Drive
+27 dBm
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 - 5
v02.0802
HMC128
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. BOND PADS ARE .004” SQUARE
3. TYPICAL BOND PAD SPACING CENTER TO CENTER
IS .006” EXCEPT AS SHOWN
4. DIE THICKNESS = .004” [.100 MM]
5. BACKSIDE METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
5
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
This pin is DC coupled and matched to 50 Ohm
from 1.8 to 5.0 GHz.
1
LO
This pin is DC coupled. For applications not requiring opera-
tion to DC, this port should be DC blocked externally using a
series capacitor whose value has been chosen to pass the
necessary IF frequency range. For operation to DC this pin
must not source or sink more than 2mA of current or die non-
function and possible die failure will result.
2
3
IF
This pin is DC coupled and matched to 50 Ohm
from 1.8 to 5.0 GHz.
RF
GND
The backside of the die must connect to RF ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 - 6
v02.0802
HMC128
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED
MIXER, 1.8 - 5.0 GHz
Assembly Diagram
5
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 - 7
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