HVU362TRU [HITACHI]
Variable Capacitance Diode, 15V, Silicon;
| 型号： | HVU362TRU |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Variable Capacitance Diode, 15V, Silicon 二极管 变容二极管 石英晶振 压控振荡器 光电二极管 |
| 文件： | 总3页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ADE-208-348 (Z)
HVU362
Variable Capacitance Diode
VCXO
Rev. 0
May. 1995
Features
Outline
• High capacitance ratio.(n=3.0min)
• Good C-V linearity.
• Ultra small Resin Package (URP) is suitable for
surface mount design.
Cathode mark
Mark
Ordering Information
1
2
Type No.
Laser Mark
Package Code
1. Cathode
2. Anode
HVU362
V2
URP
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
15
Unit
Reverse voltage
Junction temperature
Storage temperature
VR
V
Tj
125
°C
˚C
Tstg
-55 to +125
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Condition
I
—
—
10
V
= 10 V
R1
R
Reverse current
nA
I
—
41.6
—
—
100
49.9
V
V
= 10 V , Ta = 60 °C
= 1 V , f = 1 MHz
R2
R
R
C
C
1
pF
Capacitance
10.1
—
14.8
V
= 4V , f = 1 MHz
4
R
Capacitance ratio
Series resistance
n
3.0
—
—
—
—
2.0
—
Ω
C / C
1 4
r
V
= 4 V , f = 100 MHz
s
R
Both forward and reverse
*
C=200pF,
ESD-Capability
—
80
—
—
V
direction 1 pulse.
* Failure criterion ; I ≥ 20nA at V = 10 V
R
R
HVU362
-9
80
60
40
20
0
10
f=1MHz
-10
10
-11
10
-12
10
-13
10
0
20
1.0
16
Reverse voltage VR (V)
4
8
12
10-1
10
Reverse voltage VR (V)
Fig.2 Capacitance Vs.
Reverse voltage
Fig.1 Reverse current Vs.
Reverse voltage
2.0
0
f=100MHz
f=1MHz
1.8
1.6
-0.50
-1.00
-1.50
-2.00
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10-1
102
10
1.0
1.0
10
Reverse voltage VR (V)
Reverse voltage VR (V)
Fig.3 Series resistance Vs.
Reverse voltage
Fig.4 Linearity factor Vs.
Reverse voltage
HVU362
Unit: mm
Package Dimensions
Cathode Mark
V2
2
1
1.7±0.15
2.5±0.15
1 Cathode
2 Anode
HITACHI Code URP
JEDEC Code
EIAJ Code
Weight (g)
—
—
(URP)
0.004
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