HVU363B [HITACHI]

Variable Capacitance Diode for TV tuner; 变容二极管的电视调谐器
HVU363B
型号: HVU363B
厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述:

Variable Capacitance Diode for TV tuner
变容二极管的电视调谐器

二极管 变容二极管 电视 光电二极管
文件: 总5页 (文件大小:26K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HVU363B  
Variable Capacitance Diode for TV tuner  
ADE-208-623 (Z)  
Rev 0  
Apr. 1998  
Features  
Low matching error. ( C/C =2.0%max)  
High capacitance ratio. (n =13.7min)  
Low series resistance. (rs=0.75 max)  
Ultra small Resin Package (URP) is suitable for surface mount design.  
Ordering Information  
Type No.  
Laser Mark  
A3  
Package Code  
HVU363B  
URP  
Outline  
Cathode mark  
Mark  
1
2
1. Cathode  
2. Anode  
HVU363B  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Value  
Unit  
V
1
Peak reverse voltage  
Reverse voltage  
Junction temperature  
Storage temperature  
Note 1. RL=10KΩ  
VRM  
VR  
Tj  
*
35  
32  
V
125  
°C  
°C  
Tstg  
–55 to +125  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
10  
Unit  
Test Condition  
Reverse current  
IR1  
nA  
VR = 32V  
IR2  
100  
42.0  
2.75  
VR = 32V, Ta= 60°C  
VR = 1V, f = 1MHz  
VR = 28V, f = 1MHz  
C1/C28  
Capacitance  
C1  
36.0  
2.36  
13.7  
pF  
C28  
n
Capacitance ratio  
Series resistance  
Matching error  
rS  
0.75  
2.0  
VR = 5V, f = 470MHz  
VR = 1~28V, f = 1 MHz  
C/C*1  
%
Note 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of C/C  
continuous in a reel , expect extention to another group.  
Calculate Matching Error,  
(Cmax-Cmin)  
C/C=  
x 100 (%)  
Cmin  
2
HVU363B  
Main Characteristic  
100  
80  
10–6  
10–7  
f = 1MHz  
10–8  
10–9  
10–10  
10–11  
60  
40  
20  
0
10–12  
10–13  
10  
40  
1.0  
50  
40  
0
10  
20  
30  
Reverse voltage V  
(V)  
Reverse voltage V  
(V)  
R
R
Fig.2 Capacitance Vs. Reverse voltage  
Fig.1 Reverse current Vs. Reverse voltage  
1.0  
0
f = 470MHz  
0.8  
0.6  
0.4  
0.2  
–1.0  
–2.0  
–3.0  
0
1.0  
10  
10  
Reverse voltage V  
40  
40  
1.0  
(V)  
R
Reverse voltage V  
(V)  
R
Fig.3 Series resistance Vs. Reverse voltage  
Fig.4 Linearity factor Vs. Reverse voltage  
3
HVU363B  
Package Dimensions  
Unit : mm  
Cathode Mark  
2
1.7±0.15  
1
2.5±0.15  
1. Cathode  
2. Anode  
Hitachi Code  
JEDECCode  
EIAJCode  
URP  
Weight(g)  
0.004  
4
HVU363B  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & IC Div.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111  
Fax: (03) 3270-5109  
For further information write to:  
Hitachi Asia (Hong Kong) Ltd.  
Unit 706, North Tower,  
World Finance Centre,  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon  
Hong Kong  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Hitachi Semiconductor  
(America) Inc.  
2000 Sierra Point Parkway  
Brisbane, CA. 94005-1897  
U S A  
Hitachi Europe Ltd.  
Electronic Components Div.  
Northern Europe Headquarters  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Europe GmbH  
Continental Europe  
Dornacher Straße 3  
D-85622 Feldkirchen  
München  
Fax: 535-1533  
Tel: 800-285-1601  
Fax:303-297-0447  
Tel: 089-9 91 80-0  
Fax: 089-9 29 30-00  
Tel: 27359218  
Fax: 27306071  
Berkshire SL6 8YA  
United Kingdom  
Tel: 01628-585000  
Fax: 01628-585160  
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.  
5

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