2SK972 [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK972 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总7页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK972
Silicon N-Channel MOS FET
Application
TO–220AB
High speed power switching
Features
• Low on-resistance
• High speed switching
2
1
2
3
• Low drive current
• 4 V gate drive device
1. Gate
2. Drain
(Flange)
3. Source
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
1
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V
60
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
±20
V
GSS
———————————————————————————————————————————
Drain current
I
25
A
D
———————————————————————————————————————————
Drain peak current
I
*
100
A
D(pulse)
———————————————————————————————————————————
Body to drain diode reverse drain current
I
25
A
DR
———————————————————————————————————————————
Channel dissipation
Pch**
50
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at T = 25 °C
*
C
2SK972
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V
60
—
—
V
I
= 10 mA, V
= 0
(BR)DSS
D
GS
voltage
———————————————————————————————————————————
Gate to source breakdown
V
±20
—
—
V
I
= ±100 µA, V
= 0
(BR)GSS
G
DS
voltage
———————————————————————————————————————————
Gate to source leak current
I
—
—
±10
µA
V
= ±16 V, V
= 0
GSS
GS
DS
———————————————————————————————————————————
Zero gate voltage drain current
I
—
—
250
µA
V
= 50 V, V
= 0
DSS
DS
GS
———————————————————————————————————————————
Gate to source cutoff voltage
V
1.0
—
2.0
V
I
= 1 mA, V
= 10 V
GS(off)
D
DS
———————————————————————————————————————————
Static drain to source on state
R
—
0.033
0.04
Ω
I
= 15 A, V
= 10 V *
DS(on)
D
GS
resistance
———————
——————————–
0.05
0.06
I
= 15 A, V
= 4 V *
D
GS
———————————————————————————————————————————
Forward transfer admittance
|y |
12
20
—
S
I
= 15 A, V
= 10 V *
fs
D
DS
———————————————————————————————————————————
Input capacitance
Ciss
—
1400
—
pF
V
= 10 V, V
= 0,
DS
GS
————————————————————————————————
Output capacitance
Coss
—
720
—
pF
f = 1 MHz
————————————————————————————————
Reverse transfer capacitance
Crss
—
220
—
pF
———————————————————————————————————————————
Turn-on delay time
t
—
15
—
ns
I
= 15 A, V
= 10 V,
d(on)
D
GS
————————————————————————————————
Rise time
t
—
130
—
ns
R = 2 Ω
L
r
————————————————————————————————
Turn-off delay time
t
—
270
—
ns
d(off)
————————————————————————————————
Fall time
t
—
180
—
ns
f
———————————————————————————————————————————
Body to drain diode forward
V
—
1.3
—
V
I = 25 A, V
= 0
DF
F
GS
voltage
———————————————————————————————————————————
Body to drain diode reverse
t
—
135
—
ns
I = 25 A, V
= 0,
rr
F
GS
recovery time
di /dt = 50 A/µs
F
———————————————————————————————————————————
* Pulse Test
2SK972
Maximum Safe Operation Area
Power vs. Temperature Derating
500
300
60
40
20
100
30
10
3
Ta = 25°C
1.0
0.5
0
50
100
150
0.1 0.3
1.0
3
10
30
100
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
75°C
Typical Output Characteristics
50
40
30
20
10
50
40
30
20
10
8 V
6 V
10 V
4.5 V
4.0 V
TC= 25°C
VDS = 10 V
Pulse Test
–25°C
Pulse Test
3.5 V
3.0 V
VGS = 2.5 V
0
1
2
3
4
5
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
2SK972
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
5
4
0.5
0.2
Pulse Test
Pulse Test
VGS = 4 V
0.1
3
2
1
0.05
10 V
ID = 50 A
0.02
0.01
20 A
10 A
0.005
0
2
4
6
8
10
1
2
5
10
20
50 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
0.10
0.08
0.06
0.04
0.02
0
100
50
Pulse Test
ID = 20 A
VDS = 10 V
Pulse Test
–25°C
TC = 25°C
10 A
VGS = 4 V
20
10
5
5 A
20 A
10 A
75°C
5 A
VGS = 10 V
2
1
–40
0
40
80
120
160
0.5
1.0
2
20
50
5
10
Case Temperature TC (°C)
Drain Current ID (A)
2SK972
Typical Capacitance vs.
Drain to Source Voltage
Body to Diode Reverse
Recovery Time
10,000
1,000
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
VGS = 0
f = 1 MHz
3,000
1,000
500
200
100
Ciss
Coss
300
100
Crss
50
20
10
30
10
0
10
20
30
40
50
0.5 1.0
2
5
10
20
50
Drain to Source Voltage VDS (V)
Reverse Drain Current IDR (A)
Switching Characteristics
Dynamic Input Characteristics
1000
500
100
20
VDD = 50 V
25 V
td (off)
80
16
10 V
200
100
tf
60
40
20
12
8
VGS
VDS
tr
50
20
10
VGS = 10 V
PW = 2µs, duty < 1 %
VDD = 50 V
25 V
10 V
4
ID = 25 A
td (on)
0
100
0.5 1.0
2
5
0
20
40
60
10
20
50
80
Drain Current ID (A)
Gate Charge Qg (nc)
2SK972
Reverse Drain Current vs.
Source to Drain Voltage
50
40
Pulse Test
10 V
15 V
30
20
10
5 V
VGS = 0, –5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D = 1
0.5
1.0
0.3
0.1
θch–c(t) = γS (t) · θch–c
θch–c = 2.5°C/W, TC = 25°C
PDM
PW
T
0.03
0.01
D =
PW
T
10 µ
100µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
2SK972
Switching Time Test Circuit
Vin Monitor
Wavewforms
90 %
Vout Monitor
RL
D.U.T
Vin
10 %
10 %
10 %
Vout
50 Ω
90 %
d (off)
90 %
t
.
Vin = 10 V
VDD = 30 V
.
t
t
t
d (on)
r
f
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