2SK973 [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK973 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总7页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK973 L , 2SK973 S
Silicon N-Channel MOS FET
Application
4
DPAK-1
High speed power switching
4
Features
1
2
3
1
• Low on-resistance
• High speed switching
• Low drive current
2
3
2, 4
S type
L type
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
1. Gate
1
2. Drain
3. Source
4. Drain
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V
60
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
±20
V
GSS
———————————————————————————————————————————
Drain current
I
2
A
D
———————————————————————————————————————————
Drain peak current
I
*
8
A
D(peak)
———————————————————————————————————————————
Body to drain diode reverse drain current
I
2
A
DR
———————————————————————————————————————————
Channel dissipation
Pch**
10
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at T = 25 °C
C
2SK973 L , 2SK973 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V
60
—
—
V
I
= 10 mA, V
= 0
(BR)DSS
D
GS
voltage
———————————————————————————————————————————
Gate to source breakdown
V
±20
—
—
V
I
= ±100 µA, V
= 0
(BR)GSS
G
DS
voltage
———————————————————————————————————————————
Gate to source leak current
I
—
—
±10
µA
V
= ±16 V, V
= 0
GSS
GS
DS
———————————————————————————————————————————
Zero gate voltage drain current
I
—
—
100
µA
V
= 50 V, V
= 0
DSS
DS
GS
———————————————————————————————————————————
Gate to source cutoff voltage
V
1.0
—
2.0
V
I
= 1 mA, V
= 10 V
GS(off)
D
DS
———————————————————————————————————————————
Static drain to source on state
R
—
0.25
0.35
Ω
I
= 1 A, V
= 10 V *
DS(on)
D
GS
resistance
———————
——————————–
0.40
0.50
I
= 1 A, V
= 4 V *
D
GS
———————————————————————————————————————————
Forward transfer admittance
|y |
1.2
2.0
—
S
I
= 1 A, V
= 10 V *
fs
D
DS
———————————————————————————————————————————
Input capacitance
Ciss
—
240
—
pF
V
= 10 V, V
= 0,
DS
GS
————————————————————————————————
Output capacitance
Coss
—
115
—
pF
f = 1 MHz
————————————————————————————————
Reverse transfer capacitance
Crss
—
35
—
pF
———————————————————————————————————————————
Turn-on delay time
t
—
4
—
ns
I
= 1 A, V
= 10 V,
d(on)
D
GS
————————————————————————————————
Rise time
t
—
15
—
ns
R = 30 Ω
L
r
————————————————————————————————
Turn-off delay time
t
—
80
—
ns
d(off)
————————————————————————————————
Fall time
t
—
40
—
ns
f
———————————————————————————————————————————
Body to drain diode forward
V
—
1.0
—
V
I = 2 A, V
= 0
DF
F
GS
voltage
———————————————————————————————————————————
Body to drain diode reverse
t
—
70
—
ns
I = 2 A, V
= 0,
rr
F
GS
recovery time
di /dt = 50 A/µs
F
———————————————————————————————————————————
* Pulse Test
2SK973 L , 2SK973 S
Maximum Safe Operation Area
Power vs. Temperature Derating
50
30
15
10
10
10 µs
3
1.0
5
0
0.3
Ta = 25°C
0.1
0.05
50
100
150
0.1 0.3
1.0
3
10
30
100
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–25°C
Typical Output Characteristics
5
4
5
4
3
2
1
10 V
Pulse Test
5 V
4 V
75°C
VDS = 10 V
Pulse Test
TC= 25°C
3.5 V
3
2
1
3 V
2.5 V
VGS = 2 V
0
1
2
3
4
5
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
2SK973 L , 2SK973 S
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
5
2.0
1.6
Pulse Test
Pulse Test
2
1.0
0.5
5 A
VGS = 4 V
1.2
0.8
0.4
10 V
0.2
0.1
2 A
ID = 1 A
0.05
0.2
0.5 1.0
2
5
10
20
0
2
4
6
8
10
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
1.0
0.8
0.6
0.4
0.2
0
10
5
Pulse Test
VDS = 10 V
–25°C
Pulse Test
TC = 25°C
ID = 2 A
2
1 A
VGS = 4 V
75°C
1.0
0.5
5 A
VGS = 10 V
1 A, 2 A
0.2
0.1
–40
0
40
80
120
160
0.05 0.1 0.2
2
5
0.5 1.0
Case Temperature TC (°C)
Drain Current ID (A)
2SK973 L , 2SK973 S
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
500
1000
VGS = 0
f = 1 MHz
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
300
100
Ciss
200
100
50
Coss
30
10
Crss
20
10
3
1
5
0.2
0.5 1.0
2
0
10
20
5
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Switching Characteristics
td (off)
Dynamic Input Characteristics
100
50
100
20
16
80
tf
VDD = 50 V
25 V
20
10
5
60
40
20
12
8
tr
10 V
VDS
VDD = 50 V
VGS
td (on)
4
25 V
10 V
ID = 2 A
2
1
VGS = 10 V
PW = 2µs, duty < 1 %
0
10
0.05 0.1 0.2
0.5
1.0
2
5
0
2
4
6
8
Drain Current ID (A)
Gate Charge Qg (nc)
2SK973 L , 2SK973 S
Reverse Drain Current vs.
Source to Drain Voltage
5
4
Pulse Test
10 V
15 V
3
2
1
5 V
VGS = 0, –5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D = 1
0.5
1.0
0.3
0.1
θch–c(t) = γS (t) · θch–c
θch–c = 12.5°C/W, TC = 25°C
PDM
PW
D =
0.03
0.01
T
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
2SK973 L , 2SK973 S
Switching Time Test Circuit
Vin Monitor
Wavewforms
90 %
Vout Monitor
RL
D.U.T
Vin
10 %
10 %
10 %
Vout
50 Ω
90 %
d (off)
90 %
.
Vin = 10 V
VDD = 30 V
.
t
t
t
t
f
d (on)
r
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