2SK3140 [HITACHI]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3140 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总10页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3140
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-767C (Z)
4th. Edition
February 1999
Features
•
Low on-resistance
RDS(on) = 6 mΩ typ.
•
•
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
D
G
1
2
3
1. Gate
2. Drain
3. Source
S
2SK3140
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
60
VGSS
ID
ID(pulse)
±20
V
60
A
Note 1
Drain peak current
240
A
Body-drain diode reverse drain current IDR
60
A
Note 3
Note 3
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
IAP
50
A
EAR
214
mJ
W
°C
°C
Pch Note 2
35
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK3140
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
IDSS
—
—
—
—
±0.1
µA
µA
VGS = ±20 V, VDS = 0
Zero gate voltege drain
current
10
VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
1.0
—
—
45
—
—
—
—
—
—
—
—
—
—
—
—
2.5
7.5
12
—
—
—
—
—
—
—
—
—
—
—
—
V
ID = 1 mA, VDS = 10 V Note 1
ID = 30 A, VGS = 10 V Note 1
ID = 30 A, VGS = 4 V Note 1
ID = 30 A, VDS = 10 V Note 1
VDS = 10 V
6.0
8.0
75
mΩ
mΩ
S
Forward transfer admittance |yfs|
Input capacitance
Output capacitance
Ciss
7100
1000
280
125
25
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
Coss
VGS = 0
Reverse transfer capacitance Crss
f = 1 MHz
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qg
Qgs
Qgd
td(on)
tr
VDD = 25 V
VGS = 10 V
25
ID = 60 A
60
VGS = 10 V, ID = 30 A
RL = 1Ω
250
540
320
1.0
Turn-off delay time
Fall time
td(off)
tf
Body–drain diode forward
voltage
VDF
IF = 60 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
80
—
ns
IF = 60 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 1. Pulse test
3
2SK3140
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
40
30
20
10
1000
300
100
30
10
3
Operation in
this area is
limited by R
DS(on)
1
0.3
0.1
Ta = 25°C
0
3
Drain to Source Voltage
30
50
100
150
200
0.1 0.3
1
10
100
V
(V)
DS
Case Temperature Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
100
80
60
40
20
100
80
60
40
20
V
= 10 V
GS
5 V
4 V
Pulse Test
3.5 V
V
= 10 V
DS
Pulse Test
3 V
25°C
75°C
2.5 V
8
Tc = –25°C
4 5
0
0
1
2
3
2
4
6
10
Gate to Source Voltage
V
(V)
GS
Drain to Source Voltage
V
(V)
DS
4
2SK3140
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
2.0
1.6
1.2
0.8
0.4
100
Pulse Test
Pulse Test
50
20
10
5
V
GS
= 4 V
10 V
I
= 50 A
20 A
D
2
1
10 A
12
200
100
0
4
8
16
20
20
5
10
50
(A)
1
2
Gate to Source Voltage
V
(V)
GS
Drain Current
I
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
500
20
Pulse Test
V
= 10 V
DS
200
100
50
Pulse Test
16
12
8
20 A
Tc = –25 °C
I
= 50 A
D
10 A
20
10
5
4 V
25 °C
75 °C
10, 20, 50 A
V
= 10 V
50
2
1
GS
4
0
0.5
0.1 0.3
–50
0
100
150
200
1
3
10
30
100
Case Temperature Tc (°C)
Drain Current I
(A)
D
5
2SK3140
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
30000
10000
1000
500
V
GS
= 0
f = 1 MHz
Ciss
200
100
50
3000
1000
Coss
Crss
300
100
20
10
di / dt = 50 A / µs
V
= 0, Ta = 25 °C
GS
0.1 0.3
1
3
10
30
(A)
100
0
10
20
30
40
50
Reverse Drain Current
I
DR
Drain to Source Voltage V
(V)
DS
Dynamic Input Characteristics
= 60 A
Switching Characteristics
1000
500
100
80
60
40
20
20
t
I
d(off)
D
V
V
GS
16
12
8
t
f
200
100
50
V
DD
= 50 V
25 V
t
r
10 V
DS
t
d(on)
V
= 50 V
25 V
4
0
DD
20
10
V
= 10 V, V
= 30 V
DD
GS
PW = 5 µs, duty < 1 %
10 V
10 20 50 100
2
5
0
1
0.5
80
160
240
320
400
0.1 0.2
Gate Charge Qg (nc)
Drain Current
I
(A)
D
6
2SK3140
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
250
200
150
100
100
80
60
40
20
I
= 50 A
AP
10 V
V
= 25 V
DD
5 V
duty < 0.1 %
Ω
Rg > 50
V
= 0, –5 V
GS
50
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Channel Temperature Tch (°C)
Source to Drain Voltage
V
(V)
SDF
Avalanche Test Circuit
Avalanche Waveform
V
DSS
1
2
2
E
=
• L • I
•
AP
AR
V
– V
DD
DSS
L
V
DS
Monitor
I
AP
V
(BR)DSS
Monitor
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
15 V
50Ω
V
DD
0
7
2SK3140
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 3.57°C/ W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
D.U.T.
90%
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
Ω
50
= 30 V
90%
td(off)
td(on)
t
f
tr
8
2SK3140
Package Dimensions
Unit: mm
2.7 ± 0.2
10.0 ± 0.3
φ
3.2 ± 0.2
1.0 ± 0.2
4.5 ± 0.3
2.5 ± 0.2
1.15 ± 0.2
0.6 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
0.7 ± 0.1
TO–220CFM
Hitachi Code
EIAJ
—
—
JEDEC
9
2SK3140
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. Hitachi bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact
Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the
Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
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Hitachi Tower
Singapore 049318
Tel: 535-2100
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Germany
Tel: <49> (89) 9 9180-0
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Fax: 535-1533
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Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
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Electronic Components Group.
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Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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