2SK3140-E [RENESAS]
60A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220CFM, 3 PIN;
| 型号： | 2SK3140-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 60A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220CFM, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
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2SK3140
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1069-0500
(Previous: ADE-208-767C)
Rev.5.00
Sep 07, 2005
Features
•
Low on-resistance
DS(on) = 6 mΩ typ.
R
•
•
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
1. Gate
2. Drain
3. Source
1
2
3
S
Rev.5.00 Sep 07, 2005 page 1 of 7
2SK3140
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
60
±20
V
V
60
A
Note 1
Drain peak current
ID(pulse)
IDR
240
A
Body-drain diode reverse drain current
Avalanche current
60
A
Note 3
IAP
50
A
Note 3
Avalanche energy
EAR
214
mJ
W
°C
°C
Channel dissipation
Pch Note 2
35
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IGSS
Min
Typ
—
Max
—
Test Conditions
ID = 10 mA, VGS = 0
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
60
—
—
1.0
—
—
45
—
—
—
—
—
—
—
—
—
—
5
7.5
12
—
µA
µA
V
VGS = ±20 V, VDS = 0
IDSS
—
VDS = 60 V, VGS = 0
VGS(off)
RDS(on)
—
ID = 1 mA, VDS = 10 V Note 4
ID = 30 A, VGS = 10 V Note 4
ID = 30 A, VGS = 4 V Note 4
ID = 30 A, VDS = 10 V Note 4
Static drain to source on state
resistance
5
mΩ
mΩ
S
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crs
7100
1000
280
125
25
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Total gate charge
—
—
—
VDD = 25 V, VGS = 10 V,
ID = 60 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
d
td(on)
tr
—
25
—
60
—
VGS = 10 V, ID = 30 A,
RL = 1Ω
250
540
320
1.0
80
—
Turn-off delay time
Fall time
td(off)
tf
—
—
Body–drain diodvoltage
VDF
trr
—
IF = 60 A, VGS = 0
Body–drain diode rerse recovery
time
—
ns
IF = 60 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Rev.5.00 Sep 07, 2005 page 2 of 7
2SK3140
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
40
30
20
10
1000
300
100
30
10
3
Operation in
this area is
limited by R
DS(on)
1
0.3
0.1
Ta = 25°C
0
3
30
50
100
150
200
0.1 0.3
1
100
Case Temperature TC (°C)
Drain to Soure VDS (V)
Typical Output Characteristics
Tysfer Characteristics
100
80
60
40
20
100
VGS = 10 V
Pulse Test
5 V
S = 10 V
Pulse Test
4 V
3.5 V
60
40
3 V
25°C
20
75°C
Tc = –25°C
0
0
1
2
3
4
5
2
4
6
10
Drain to Source DS (V)
Gate to Source Voltage VGS (V)
Drain to Suration Voltage
vs. ource Voltage
Static Drain to Source on State
Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
100
50
Pulse Test
Pulse Test
20
10
5
VGS = 4 V
10 V
ID = 50 A
20 A
2
1
10 A
12
200
100
50
0
4
8
16
20
20
5
10
1
2
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 3 of 7
2SK3140
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
500
20
16
12
8
Pulse Test
VDS = 10 V
Pulse Test
200
100
50
20 A
Tc = –25°C
ID = 50 A
10 A
20
10
5
4 V
25°C
75°C
10, 20, 50 A
VGS = 10 V
2
1
4
0
0.5
–50
0
50
100
150
200
0.1 0.3
1
3
10
30
100
Case Temperature TC (°C)
Drain Curre(A)
Body to Drain Diode Reverse
Recovery Time
Typcitance
vs. ource Voltage
VGS = 0
30000
10
1000
500
f = 1 MHz
Ciss
200
100
50
0
1000
Coss
Crss
300
100
20
10
di / dt = 50 A / µs
VGS = 0, Ta = 25°
0.1 0.3
1
3
10
0
10
20
30
40
50
Reverse Drain CurrA)
Drain to Source Voltage VDS (V)
Dynamic aracteristics
Switching Characteristics
1000
500
100
80
60
40
20
20
ID =
t
d(off)
VGS
16
12
8
t
f
200
100
50
VDD = 50 V
25 V
10 V
t
r
VDS
t
d(on)
VDD = 50 V
25 V
10 V
4
0
20
10
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
0
80
160
240
320
400
10 20
2
5
50
100
1
0.5
0.1 0.2
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.5.00 Sep 07, 2005 page 4 of 7
2SK3140
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
250
200
150
100
100
IAP= 50 A
10 V
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
80
60
40
20
5 V
V
= 0, –5 V
GS
50
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Source to Drain Voltage VSDF (V)
Channel Temperaturh (°C)
Normalized Transient Thermal Impedance vs. Pulse Wi
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 3.57°C/ W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalat Circuit
Avalanche Waveform
VDSS
• L • IAP •
VDSS – VDD
L
1
2
2
EAR
=
itor
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
50 Ω
VDD
0
Rev.5.00 Sep 07, 2005 page 5 of 7
2SK3140
Switching Time Test Circuit
Vin Monitor
Switching Time Waveforms
Vout
Monitor
90%
D.U.T.
RL
10%
10%
Vin
VDD
= 30 V
Vin
10 V
Vout
10%
50 Ω
90%
90%
t
t
t
r
d(on)
t
f
d(off)
Rev.5.00 Sep 07, 2005 page 6 of 7
2SK3140
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0003AE-A
Package Name
MASS[Typ.]
1.9g
Unit: mm
TO-220CFM / TO-220CFMV
4.5 0.3
2.7 0.2
10.0 0.3
φ 3.2 0.2
1.0 0.2
1.15 0.2
2.5 0.2
0.6 0.1
2.54
2.54
0.7 0.1
Ordering Information
Part Name
Quantity
Shipping Container
2SK3140-E
50 pcs
Plastic magazine
Note: For some grades, production may ated. Please contact the Renesas sales office to check the state of
production before ordering the
Rev.5.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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