2SK3069 [HITACHI]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3069 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总10页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-694I (Z)
10th. Edition
February 1999
Features
•
Low on-resistance
RDS(on) = 6 mΩ typ.
•
•
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
D
G
1. Gate
2. Drain(Flange)
3. Source
1
2
3
S
2SK3069
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
60
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
ID(pulse)
±20
V
75
A
Note 1
Drain peak current
300
A
Body-drain diode reverse drain current IDR
75
A
Note 3
Note 3
Note 2
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
IAP
50
A
EAR
214
mJ
W
°C
°C
Pch
Tch
Tstg
100
150
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK3069
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS 60
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V Note 1
ID = 40 A, VGS = 10 VNote 1
ID = 40 A, VGS = 4 VNote 1
ID = 40 A, VDS = 10 V Note 1
VDS = 10 V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
—
—
1.0
—
—
50
—
—
—
—
—
—
—
—
—
—
—
—
—
±0.1
10
2.5
7.5
12
—
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
—
6.0
8.0
80
mΩ
mΩ
S
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
Qg
7100
1000
280
125
25
—
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Total gate charge
—
VGS = 0
—
f = 1 MHz
—
VDD = 25 V
Gate to source charge
Gate to drain charge
Turn-on delay time
Qgs
Qgd
td(on)
tr
—
VGS = 10 V
25
—
ID = 75 A
60
—
VGS = 10 V, ID = 40 A
RL = 0.75 Ω
Rise time
300
520
330
1.05
90
—
Turn-off delay time
td(off)
tf
—
Fall time
—
Body–drain diode forward voltage VDF
—
IF = 75 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
ns
IF = 75 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 1. Pulse test
3
2SK3069
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
200
150
100
50
1000
300
100
30
10
3
Operation in
this area is
limited by R
DS(on)
1
0.3
0.1
Ta = 25°C
0
3
Drain to Source Voltage
30
50
100
150
200
0.1 0.3
1
10
100
V
(V)
DS
Case Temperature Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
100
80
60
40
20
100
80
60
40
20
V
= 10 V
GS
5 V
4 V
Pulse Test
3.5 V
V
= 10 V
DS
Pulse Test
3 V
25°C
75°C
2.5 V
8
Tc = –25°C
4 5
0
0
1
2
3
2
4
6
10
Gate to Source Voltage
V
(V)
GS
Drain to Source Voltage
V
(V)
DS
4
2SK3069
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
2.0
1.6
1.2
0.8
0.4
100
Pulse Test
Pulse Test
50
20
10
5
V
GS
= 4 V
10 V
I
= 50 A
20 A
D
2
1
10 A
12
200
100
0
4
8
16
20
20
5
10
50
(A)
1
2
Gate to Source Voltage
V
(V)
GS
Drain Current
I
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
500
20
Pulse Test
V
= 10 V
DS
200
100
50
Pulse Test
16
12
8
20 A
Tc = –25 °C
I
= 50 A
D
10 A
20
10
5
4 V
25 °C
10, 20, 50 A
75 °C
V
GS
= 10 V
50
2
1
4
0
0.5
0.1 0.3
–50
0
100
150
200
1
3
10
30
100
Case Temperature Tc (°C)
Drain Current I
(A)
D
5
2SK3069
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
30000
10000
1000
500
V
GS
= 0
f = 1 MHz
Ciss
200
100
50
3000
1000
Coss
Crss
300
100
20
10
di / dt = 50 A / µs
V
= 0, Ta = 25°C
GS
0.1 0.3
1
3
10
30
(A)
100
0
10
20
30
40
50
Reverse Drain Current
I
DR
Drain to Source Voltage V
(V)
DS
Dynamic Input Characteristics
= 75 A
Switching Characteristics
1000
500
100
I
20
t
d(off)
D
V
GS
80
16
12
8
t
f
200
100
50
V
DD
= 50 V
25 V
60
V
t
r
DS
10 V
t
d(on)
40
20
V
= 50 V
25 V
4
0
DD
20
10
V
= 10 V, V
= 30 V
DD
GS
PW = 5 µs, duty < 1%
10 V
10 20 50 100
5
2
0
1
0.5
80
160
240
320
400
0.1 0.2
Gate Charge Qg (nc)
Drain Current
I
(A)
D
6
2SK3069
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
250
200
150
100
100
80
60
40
20
I
= 50 A
AP
10 V
V
= 25 V
DD
duty < 0.1%
5 V
Ω
Rg > 50
V
= 0, –5 V
GS
50
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Channel Temperature Tch (°C)
Source to Drain Voltage
V
(V)
SD
Avalanche Test Circuit
Avalanche Waveform
V
DSS
– V
1
2
2
E
=
• L • I
•
AP
AR
V
DSS
DD
L
V
DS
Monitor
I
AP
Monitor
V
(BR)DSS
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
15 V
50Ω
V
DD
0
7
2SK3069
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 1.25 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
PW
T
0.01
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
D.U.T.
90%
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50Ω
= 30 V
90%
td(off)
td(on)
t
f
tr
8
2SK3069
Package Dimensions
Unit: mm
10.16±0.2
9.5
+ 0.1
– 0.08
4.44±0.2
f 3.6
8.0
1.26±0.15
1.2±0.1
1.27±0.1
1.5 max
0.5±0.1
0.76 ±0.1
2.54 ±0.5
2.7 max
2.54 ±0.5
TO–220AB
SC–46
—
Hitachi Code
EIAJ
JEDEC
9
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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(America) Inc.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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