2SK3069-E [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关型号: | 2SK3069-E |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Silicon N Channel MOS FET High Speed Power Switching |
文件: | 总8页 (文件大小:87K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1062-1100
(Previous: ADE-208-694I)
Rev.11.00
Sep 07, 2005
Features
•
Low on-resistance
RDS(on) = 6 mΩ typ.
•
•
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
2. Drain
(Flange)
3. Source
G
1
2
3
S
Rev.11.00 Sep 07, 2005 page 1 of 7
2SK3069
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
60
±20
V
V
75
A
Note 1
Drain peak current
ID(pulse)
300
A
Body-drain diode reverse drain current
Avalanche current
IDR
75
A
Note 3
IAP
EAR
Pch
50
A
Note 3
Note 2
Avalanche energy
214
mJ
W
°C
°C
Channel dissipation
100
Channel temperature
Tch
Tstg
150
Storage temperature
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IGSS
Min
Typ
—
Max
—
Unit
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
60
—
—
1.0
—
—
50
—
—
—
—
—
—
—
—
—
—
—
—
V
µA
µA
V
ID = 10 mA, VGS = 0
—
±0.1
10
2.5
7.5
12
—
VGS = ±20 V, VDS = 0
IDSS
—
VDS = 60 V, VGS = 0
VGS(off)
RDS(on)
—
ID = 1 mA, VDS = 10 V Note 4
ID = 40 A, VGS = 10 V Note 4
ID = 40 A, VGS = 4 V Note 4
ID = 40 A, VDS = 10 V Note 4
Static drain to source on state
resistance
6.0
8.0
80
mΩ
mΩ
S
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
Qg
7100
1000
280
125
25
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Total gate charge
—
—
—
VDD = 25 V, VGS = 10 V,
ID = 75 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td(on)
tr
—
25
—
60
—
VGS = 10 V, ID = 40 A,
RL = 0.75 Ω
300
520
330
1.05
90
—
Turn-off delay time
Fall time
td(off)
tf
—
—
Body–drain diode forward voltage
VDF
trr
—
IF = 75A, VGS = 0
Body–drain diode reverse recovery
time
—
ns
IF = 75A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Rev.11.00 Sep 07, 2005 page 2 of 7
2SK3069
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
200
150
100
50
1000
300
100
30
10
3
Operation in
this area is
limited by R
DS(on)
1
0.3
0.1
Ta = 25°C
0
3
30
50
100
150
200
0.1 0.3
1
10
100
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
100
80
60
40
20
100
80
VGS = 10 V
Pulse Test
5 V
VDS = 10 V
Pulse Test
4 V
3.5 V
60
40
3 V
25°C
20
75°C
2.5 V
8
Tc = –25°C
0
0
1
2
3
4
5
2
4
6
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
100
50
Pulse Test
Pulse Test
20
10
5
VGS = 4 V
10 V
ID = 50 A
20 A
2
1
10 A
12
200
100
50
0
4
8
16
20
20
5
10
1
2
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.11.00 Sep 07, 2005 page 3 of 7
2SK3069
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
500
20
16
12
8
Pulse Test
VDS = 10 V
Pulse Test
200
100
50
20 A
Tc = –25°C
ID = 50 A
10 A
20
10
5
4 V
25°C
75°C
10, 20, 50 A
VGS = 10 V
2
1
4
0
0.5
–50
0
50
100
150
200
0.1 0.3
1
3
10
30
100
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
VGS = 0
30000
10000
1000
500
f = 1 MHz
Ciss
200
100
50
3000
1000
Coss
Crss
300
100
20
10
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
0.1 0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
1000
500
100
80
60
40
20
20
ID = 75 A
t
d(off)
VGS
16
12
8
t
f
200
100
50
VDD = 50 V
25 V
10 V
VDS
t
r
t
d(on)
VDD = 50 V
25 V
10 V
4
0
20
10
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
0
10 20 50 100
5
2
80
160
240
320
400
1
0.5
0.1 0.2
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.11.00 Sep 07, 2005 page 4 of 7
2SK3069
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
250
200
150
100
100
IAP = 50 A
10 V
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
80
60
40
20
5 V
VGS = 0, –5 V
50
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 1.25°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
L
1
2
2
EAR
=
• L • IAP •
VDS
Monitor
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
50 Ω
VDD
0
Rev.11.00 Sep 07, 2005 page 5 of 7
2SK3069
Switching Time Test Circuit
Vin Monitor
Switching Time Waveforms
90%
Vout
Monitor
D.U.T.
RL
10%
10%
Vin
Vout
10%
VDD
= 30 V
Vin
10 V
50 Ω
90%
90%
t
t
t
r
d(on)
t
f
d(off)
Rev.11.00 Sep 07, 2005 page 6 of 7
2SK3069
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name
MASS[Typ.]
1.8g
Unit: mm
TO-220AB / TO-220ABV
11.5 Max
10.16 0.2
4.44 0.2
9.5
8.0
+0.1
–0.08
1.26 0.15
φ 3.6
2.7 Max
1.5 Max
0.76 0.1
2.54 0.5
0.5 0.1
2.54 0.5
Ordering Information
Part Name
Quantity
Shipping Container
2SK3069-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.11.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
相关型号:
©2020 ICPDF网 联系我们和版权申明