2SK215 [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK215 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总6页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK213, 2SK214, 2SK215, 2SK216
Silicon N-Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed switching.
Complementary pair with 2SJ76, J77, J78, J79
Features
•
•
•
•
Suitable for direct mounting
High forward transfer admittance
Excellent frequency response
Enhancement-mode
Outline
TO-220AB
1
D
2
3
1. Gate
G
2. Source
(Flange)
3. Drain
S
2SK213, 2SK214, 2SK215, 2SK216
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
140
Unit
Drain to source voltage
2SK213
2SK214
2SK215
2SK216
VDSX
V
160
180
200
Gate to source voltage
Drain current
VGSS
ID
±15
V
500
mA
mA
W
Body to drain diode reverse drain current
Channel dissipation
IDR
500
Pch
Pch*1
Tch
Tstg
1.75
30
W
Channel temperature
150
°C
°C
Storage temperature
–45 to +150
Note: 1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test conditions
Drain to source
2SK213 V(BR)DSX 140
ID = 1 mA, VGS = –2 V
breakdown voltage 2SK214
160
180
—
—
V
2SK215
2SK216
—
—
V
200
—
—
V
Gate to source breakdown
voltag
V(BR)GSS ±15
—
—
V
IG = ±10 µA, VDS = 0
Gate to source voltage
VGS(on)
VDS(sat)
0.2
—
—
—
1.5
2.0
V
V
ID = 10 mA, VDS = 10 V *1
ID = 10 mA, VGD = 0 *1
Drain to source saturation
voltage
Forward transfer admittance
Input capacitance
|yfs|
20
—
—
40
90
2.2
—
—
—
mS
pF
pF
ID = 10 mA, VDS = 20 V *1
ID = 10 mA, VDS = 10 V,
f = 1 MHz
Ciss
Crss
Reverse transfer capacitance
Note: 1. Pulse test
2
2SK213, 2SK214, 2SK215, 2SK216
Typical Output Characteristics
500
Power vs. Temperature Derating
3.5
60
40
TC = 25°C
3.0
400
2.5
300
2.0
200
1.5
20
0
100
1.0
VGS = 0.5 V
0
4
8
12
16
20
50
100
150
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
VDS = 20 V
Typical Output Characteristics
50
40
30
20
10
500
400
TC = 25°C
0.8
0.7
300
200
100
0.6
0.5
0.4
0.3
0.2
VGS = 0.1V
0
1
2
3
4
5
0
20
40
60
80
100
Gate Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
3
2SK213, 2SK214, 2SK215, 2SK216
Forward Transfer Admittance
vs. Drain Current
Typical Transfer Characteristics
100
200
100
50
VDS = 20 V
80
60
40
20
20
10
5
TC = 25°C
VDS = 20 V
0
0.4
0.8
1.2
1.6
2.0
2
5
10
20
50 100 200
Gate Source Voltage VGS (V)
Drain Current ID (mA)
Forward Transfer Admittance
vs. Frequency
500
100
10
TC = 25°C
VDS = 20 V
ID = 10 mA
1.0
0.1
0.05
5 k 10 k
100 k
1 M
10 M 50 M
Frequency f (HZ)
4
Unit: mm
11.5 MAX
10.16 ± 0.2
4.44 ± 0.2
9.5
8.0
+0.1
-0.08
1.26 ± 0.15
φ 3.6
2.7 MAX
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
0.5 ± 0.1
2.54 ± 0.5
Hitachi Code
JEDEC
EIAJ
TO-220AB
Conforms
Conforms
Weight (reference value) 1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
相关型号：
©2020 ICPDF网 联系我们和版权申明