2SK215-E [RENESAS]
Silicon N Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK215-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET |
| 文件： | 总6页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK213, 2SK214, 2SK215, 2SK216
Silicon N Channel MOS FET
REJ03G0903-0200
(Previous: ADE-208-1241)
Rev.2.00
Sep 07, 2005
Application
High frequency and low frequency power amplifier, high speed switching.
Complementary pair with 2SJ76, J77, J78, J79
Features
•
•
•
•
Suitable for direct mounting
High forward transfer admittance
Excellent frequency response
Enhancement-mode
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
G
2. Source
(Flange)
3. Drain
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK213, 2SK214, 2SK215, 2SK216
Absolute Maximum Ratings
(Ta = 25°C)
Unit
Item
Symbol
Ratings
140
Drain to source voltage
2SK213
2SK214
2SK215
2SK216
VDSX
V
160
180
200
Gate to source voltage
Drain current
VGSS
ID
±15
V
mA
mA
W
500
Body to drain diode reverse drain current
Channel dissipation
IDR
500
Pch
Pch*1
Tch
Tstg
1.75
30
W
Channel temperature
150
°C
°C
Storage temperature
–45 to +150
Note: 1. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
140
160
180
200
±15
0.2
—
Typ
—
Max
Unit
V
Test conditions
Drain to source breakdown 2SK213
V(BR)DSX
—
—
—
—
—
1.5
2.0
—
—
—
ID = 1 mA, VGS = –2 V
voltage
2SK214
2SK215
2SK216
—
V
—
V
—
V
Gate to source breakdown voltage
Gate to source voltage
V(BR)GSS
VGS(on)
VDS(sat)
|yfs|
—
V
IG = ±10 µA, VDS = 0
—
V
ID = 10 mA, VDS = 10 V *2
ID = 10 mA, VGD = 0 *2
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
—
V
20
40
90
2.2
mS ID = 10 mA, VDS = 20 V *2
Ciss
—
pF
pF
ID = 10 mA, VDS = 10 V,
f = 1 MHz
Reverse transfer capacitance
Note: 2. Pulse test
Crss
—
Rev.2.00 Sep 07, 2005 page 2 of 5
2SK213, 2SK214, 2SK215, 2SK216
Main Characteristics
Power vs. Temperature Derating
Typical Output Characteristics
500
400
60
40
3.5
TC = 25°C
3.0
2.5
300
200
100
2.0
1.5
20
1.0
VGS = 0.5 V
0
50
100
150
0
4
8
12
16
20
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
VDS = 20 V
50
40
30
20
10
500
400
TC = 25°C
0.8
0.7
300
200
100
0.6
0.5
0.4
0.3
0.2
VGS = 0.1 V
0
20
40
60
80
100
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate Source Voltage VGS (V)
Forward Transfer Admittance
vs. Drain Current
Typical Transfer Characteristics
VDS = 20 V
100
80
200
100
50
60
40
20
20
10
5
TC = 25°C
VDS = 20 V
0
0.4
0.8
1.2
1.6
2.0
2
5
10
20
50 100 200
Gate Source Voltage VGS (V)
Drain Current ID (mA)
Rev.2.00 Sep 07, 2005 page 3 of 5
2SK213, 2SK214, 2SK215, 2SK216
Forward Transfer Admittance
vs. Frequency
500
100
10
TC = 25°C
VDS = 20 V
ID = 10 mA
1.0
0.1
0.05
5 k 10 k
100 k
1 M
10 M 50 M
Frequency f (HZ)
Rev.2.00 Sep 07, 2005 page 4 of 5
2SK213, 2SK214, 2SK215, 2SK216
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name
MASS[Typ.]
1.8g
Unit: mm
TO-220AB / TO-220ABV
11.5 Max
10.16 0.2
4.44 0.2
9.5
8.0
+0.1
–0.08
1.26 0.15
φ 3.6
2.7 Max
1.5 Max
0.76 0.1
2.54 0.5
0.5 0.1
2.54 0.5
Ordering Information
Part Name
Quantity
Shipping Container
2SK213-E
2SK214-E
2SK215-E
2SK216-E
500 pcs
500 pcs
Box (Sack)
Box (Sack)
Box (Sack)
Box (Sack)
500 pcs
500 pcs
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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