2SJ479 [HITACHI]
Silicon P Channel DV-L MOS FET High Speed Power Switching; 硅P通道DV -L MOS FET高速电源开关
| 型号： | 2SJ479 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ479(L), 2SJ479(S)
Silicon P Channel DV–L MOS FET
High Speed Power Switching
ADE-208-541
1st. Edition
Features
•
Low on-resistance
RDS(on) = 25 mΩ typ.
4V gate drive devices.
High speed switching
•
•
Outline
LDPAK
4
4
D
1
2
3
1
G
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
2SJ479(L), 2SJ479(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
–30
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
±20
V
–30
A
Note1
Drain peak current
ID(pulse)
–120
–30
A
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
IDR
A
Pch Note2
50
W
°C
°C
Tch
150
Tstg
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
2
2SJ479(L), 2SJ479(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
–30
—
—
V
ID = –10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
IDSS
±20
—
—
—
V
IG = ±100µA, VDS = 0
Zero gate voltege drain
current
—
–10
µA
VDS = –30 V, VGS = 0
Gate to source leak current
IGSS
—
–1.0
—
—
12
—
—
—
—
—
—
—
—
—
±10
–2.0
35
60
—
µA
V
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –15A, VGS = –10VNote3
ID = –15A, VGS = –4VNote3
ID = –15A, VDS = –10VNote3
VDS = –10V
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
—
25
mΩ
mΩ
S
resistance
RDS(on)
40
Forward transfer admittance |yfs|
20
Input capacitance
Output capacitance
Ciss
1700
950
260
20
—
pF
pF
pF
ns
ns
ns
ns
V
Coss
—
VGS = 0
Reverse transfer capacitance Crss
—
f = 1MHz
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
—
VGS = –10V, ID = –15A
RL = 0.67Ω
290
170
130
–1.1
—
Turn-off delay time
Fall time
—
—
Body to drain diode forward
voltage
VDF
—
IF = –30A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
70
—
ns
IF = –30A, VGS = 0
diF/ dt = 50A/µs
Note: 3. Pulse test
See characteristic curves of 2SJ471
3
2SJ479(L), 2SJ479(S)
Main Characteristics
Power vs. Temperature Derating
Maximun Safe Operation Area
–500
100
75
–200
–100
10 µs
–50
–20
50
–10
–5
Operation in
this area is
limited by R
25
–2
–1
DS(on)
Ta = 25 °C
–0.5
0
–3
–30
50
100
150
200
–0.1 –0.3
–1
–10
–100
Drain to Source Voltage V
(V)
Case Temperature Tc (°C)
DS
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
Pulse Width PW (S)
100 m
1
10
4
2SJ479(L), 2SJ479(S)
Switching Timen Test Circuit
Vin Monitor
Waveform
Vout
Monitor
Vin
10%
D.U.T.
R
L
90%
V
DD
Vin
10 V
90%
90%
10%
50Ω
= –10 V
10%
Vout
td(off)
td(on)
t
f
tr
5
2SJ479(L), 2SJ479(S)
Package Dimensions
Unit: mm
4.44 ± 0.2
10.2 ± 0.3
1.3 ± 0.2
4.44 ± 0.2
10.2 ± 0.3
1.3 ± 0.2
2.59 ± 0.2
1.27 ± 0.2
0.76 ± 0.1
1.2 ± 0.2
+0.2
0.86
–0.1
+0.2
–0.1
0.1
2.59 ± 0.2
1.27 ± 0.2
0.4 ± 0.1
+0.2
–0.1
1.2 ± 0.2
0.4 ± 0.1
0.86
2.54 ± 0.5
2.54 ± 0.5
2.54 ± 0.5
2.54 ± 0.5
L type
S type
LDPAK
Hitachi Code
EIAJ
—
—
JEDEC
6
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
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Hitachi Tower
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Tel: 535-2100
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Germany
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Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
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Electronic Components Group.
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Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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