2SJ479(S) [RENESAS]
0.06ohm, POWER, FET, LDPAK-3;
| 型号： | 2SJ479(S) |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 0.06ohm, POWER, FET, LDPAK-3 晶体 晶体管 场效应晶体管 |
| 文件： | 总8页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ479(L), 2SJ479(S)
Silicon P Channel MOS FET
REJ03G0866-0300
Rev.3.00
Jun 05, 2006
Description
High speed power switching
Features
•
Low on-resistance
RDS (on) = 25 mΩ typ.
4 V gate drive devices.
High speed switching
•
•
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
D
4
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
2
3
1
2
3
S
Rev.3.00 Jun 05, 2006 page 1 of 7
2SJ479(L), 2SJ479(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Value
–30
Unit
V
±20
V
–30
A
Note 1
Drain peak current
ID (pulse)
–120
–30
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch Note 2
Tch
A
50
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V (BR) DSS
V (BR) GSS
IDSS
Min
–30
±20
—
Typ
—
Max
—
Unit
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
V
V
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = –30 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = –1 mA, VDS = –10 V
ID = –15 A, VGS = –10 V Note 3
ID = –15 A, VGS = –4 V Note 3
ID = –15 A, VDS = –10 V Note 3
VDS = –10 V
—
—
—
–10
±10
–2.0
35
60
—
µA
µA
V
IGSS
—
—
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
RDS (on)
|yfs|
–1.0
—
—
25
mΩ
mΩ
S
—
40
Forward transfer admittance
Input capacitance
12
—
20
Ciss
1700
950
260
20
—
pF
pF
pF
ns
ns
ns
ns
V
VGS = 0
Output capacitance
Coss
Crss
td (on)
tr
—
—
f = 1 MHz
Reverse transfer capacitance
Turn-on delay time
—
—
—
—
VGS = –10 V
ID = –15 A
Rise time
—
290
170
130
–1.1
70
—
RL = 0.67 Ω
Turn-off delay time
td (off)
tf
—
—
Fall time
—
—
Body to drain diode forward voltage
Body to drain diode reverse recovery time
VDF
—
—
IF = –30 A, VGS = 0
IF = –30 A, VGS = 0
diF/dt = 50 A/µs
trr
—
—
ns
Note: 3. Pulse test
Rev.3.00 Jun 05, 2006 page 2 of 7
2SJ479(L), 2SJ479(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–500
–300
100
75
10 µs
–100
100
µ
PW = 10 ms (1 s
1 ms
s
–30
–10
DC Operation (Tc = C)
50
Operation in
this area is
limited by RDS (on)
–3
25
0
–1
Ta = 25°C
–0.5
0
50
100
150
200
–0.1 –0.3
–1
–3
–10 –30 –100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
–6 V
Typical Transfer Characteristics
Tc = –25°C
–10 V
–50
–40
–30
–20
–10
0
–50
–40
–30
–20
–10
0
Pulse Test
–5 V
–4.5 V
–4 V
–3.5 V
25°C
75°C
–3 V
VGS = –2.5 V
VDS = –10 V
Pulse Test
0
–2
–4
–6
–8
–10
0
–1
–2
–3
–4
–5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
–1.0
0.5
Pulse Test
Pulse Test
–0.8
–0.6
–0.4
–0.2
0
0.2
0.1
ID = –20 A
VGS = –4 V
0.05
–10 A
–5 A
0.02
0.01
–10 V
0
–4
–8
–12
–16
–20
–1
–2
–5
–10 –20
–50
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Jun 05, 2006 page 3 of 7
2SJ479(L), 2SJ479(S)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
50
0.10
0.08
0.06
0.04
0.02
0
Pulse Test
20
10
5
Tc = –25°C
ID = –20 A
25°C
75°C
2
1
VGS = –4 V
–5 A, –10 A
0.5
–5 A, –10 A, –20 A
VDS = –10 V
Pulse Test
–10 V
0
0.2
0.1
–40
40
80
120
160
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Case Temperature Tc (°C)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
10000
5000
200
100
50
Ciss
2000
1000
500
Coss
Crss
20
10
5
200
100
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Reverse Drain Current IDR (A)
0
–4
–8
–12
–16
–20
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
0
VDD = –5 V
Switching Characteristics
1000
500
0
ID = –30 A
–10 V
–25 V
–10
–20
–30
–40
–50
–4
–8
t
d(off)
200
100
50
VGS
VDS
VDD = –25 V
t
f
t
r
–12
–16
–20
–10 V
–5 V
t
d(on)
20
10
VGS = –10 V, VDD = –10 V
duty ≤ 1 %
5
–0.1 –0.2 –0.5 –1 –2
0
16
32
48
64
80
–5 –10 –20 –50
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.3.00 Jun 05, 2006 page 4 of 7
2SJ479(L), 2SJ479(S)
Reverse Drain Current vs.
Source to Drain Voltage
–50
–40
–30
–20
–10
0
Pulse Test
–
10 V
–
5 V
VGS = 0, 5 V
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D = 1
0.5
1
0.3
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 2.5°C/W, Tc = 25°C
PW
T
D =
PDM
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
VDD
= –10 V
Vin
–10 V
50 Ω
10%
10%
Vout
t
t
t
t
f
d(on)
r
d(off)
Rev.3.00 Jun 05, 2006 page 5 of 7
2SJ479(L), 2SJ479(S)
Package Dimensions
Package Name
LDPAK(L)
JEITA Package Code
RENESAS Code
PRSS0004AE-A
Previous Code
MASS[Typ.]
1.40g
Unit: mm
LDPAK(L) / LDPAK(L)V
4.44 0.2
1.3 0.15
10.2 0.3
1.3 0.2
1.37 0.2
2.49 0.2
+ 0.2
0.86
– 0.1
0.76 0.1
2.54 0.5
0.4 0.1
2.54 0.5
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
MASS[Typ.]
1.30g
Unit: mm
LDPAK(S)-(1) / LDPAK(S)-(1)V
4.44 0.2
7.8
6.6
10.2 0.3
1.3 0.15
2.49 0.2
+ 0.2
0.1
– 0.1
2.2
1.37 0.2
0.4 0.1
+ 0.2
– 0.1
1.3 0.2
0.86
2.54 0.5
2.54 0.5
Rev.3.00 Jun 05, 2006 page 6 of 7
2SJ479(L), 2SJ479(S)
Ordering Information
Part Name
Quantity
Shipping Container
2SJ479L-E
500 pcs
1000 pcs
Box (Sack)
Taping
2SJ479STL-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Jun 05, 2006 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .6.0
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