2SD1419 [HITACHI]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SD1419 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总5页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1419
Silicon NPN Epitaxial
Application
•
•
Low frequency power amplifier
Complementary pair with 2SB1026
Outline
UPAK
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1419
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
120
VCEO
100
V
VEBO
5
V
IC
1
A
1
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
iC(peak)
PC*2
Tj
*
2
A
1
W
°C
°C
150
Tstg
–55 to +150
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
120
100
5
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
V
Collector cutoff current
DC current transfer ratio
ICBO
—
60
30
—
—
—
—
—
10
200
—
1
µA
VCB = 100 V, IE = 0
1
hFE1
hFE2
*
VCE = 5 V, IC = 150 mA*2
VCE = 5 V, IC = 500 mA*2
IC = 500 mA, IB = 50 mA*2
Collector to emitter saturation VCE(sat)
voltage
V
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
VBE
fT
—
—
—
—
1.5
—
V
VCE = 5 V, IC = 150 mA*2
VCE = 5 V, IC = 150 mA*2
VCB = 10 V, IE = 0, f = 1 MHz
140
12
MHz
pF
Cob
—
Notes: 1. The 2SD1419 is grouped by hFE1 as follows.
2. Pulse test
Mark
DD
DE
hFE1
60 to 120
100 to 200
See characteristic curves of 2SD1418.
2
2SD1419
Maximum Collector Dissipation Curve
1.2
0.8
0.4
50
100
150
0
Ambient Temperature Ta (°C)
3
Unit: mm
4.5 ± 0.1
1.5 ± 0.1
0.44 Max
1.8 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Hitachi Code
JEDEC
UPAK
—
EIAJ
Conforms
Weight (reference value) 0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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