2SC4897 [HITACHI]
Silicon NPN Triple Diffused; 硅NPN三重扩散
| 型号： | 2SC4897 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Triple Diffused |
| 文件： | 总4页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4897
Silicon NPN Triple Diffused
Application
TO–3PL
Character Display Horizontal Deflection Output
Features
• High speed switching time: 0.5 µs max
• High breakdown voltage, high current:
V
= 1500 V, I = 20 A
CBO
C
• Suitable for large size CRT Display
1. Base
2. Collector
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to base voltage
V
1500
V
CBO
———————————————————————————————————————————
Collector to emitter voltage
V
800
V
CEO
———————————————————————————————————————————
Emitter to base voltage
V
6
V
EBO
———————————————————————————————————————————
Collector current
I
20
A
C
———————————————————————————————————————————
Collector surge current
ic(surge)
25
A
———————————————————————————————————————————
*1
Collector power dissipation
P
150
W
C
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Value at TC = 25°C.
2SC4897
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max Unit Test Conditions
———————————————————————————————————————————
Collector to emitter breakdown
V
800
—
—
V
I = 10 mA,
(BR)CEO
C
voltage
R
= ∞
BE
———————————————————————————————————————————
Emitter to base breakdown
V
6
—
—
V
I = 10 mA, I = 0
(BR)EBO
E C
voltage
———————————————————————————————————————————
Collector cutoff current
I
—
—
500
µA
V
= 1500 V,
CES
CE
R
= 0
BE
———————————————————————————————————————————
DC current transfer ratio
h
—
—
38
—
V
= 5 V,
FE
CE
I
= 1 A
C
———————————————————————————————————————————
Collector to emitter saturation
V
—
—
5
V
I = 14 A, I = 3.5 A
CE(sat)
C B
voltage
———————————————————————————————————————————
Base to emitter saturation
V
—
—
1.5
V
I = 14 A, I = 3.5 A
BE(sat)
C B
voltage
———————————————————————————————————————————
Fall time
tf
—
—
0.5
µs
I
I
= 10 A, I = 2 A
CP
B2
B1
≈ –3A, f = 31.5 kHz
H
———————————————————————————————————————————
Area of Safe Operation
Maximum Collector Power Dissipation Curve
200
40
30
20
10
150
100
50
(100V, 25A)
(800V, 4A)
0.5 mA
0
50
100
150
200
0
500
1000
1500
2000
(V)
Collector to Emitter Voltage V
CE
Case Temperature Tc (°C)
2SC4897
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
20
10
100
50
75 °C
25 °C
20
10
5
2
1
V
CE
= 5 V
I
= 0
Tc = 25 °C
B
0
5
10
(V)
0.1 0.2
0.5
1
2
5
10 20
Collector to Emitter Voltage
V
CE
Collector Current
I
(A)
C
Collector to Emitter Saturation Voltage
vs. Collector Current
Base to Emitter Saturation Voltage
vs. Collector Current
2
10
5
I
/ I = 4
B
C
I
/ I = 4
B
C
1
0.5
Tc = –25 °C
25 °C
2
1
Tc = –25 °C
25 °C
0.2
0.1
0.5
75 °C
0.05
0.2
0.1
75 °C
0.02
0.1 0.2
0.5
1
2
5
10 20
0.1 0.2
0.5
1
2
5
10 20
Collector Current
I
(A)
C
Collector Current
I
(A)
C
2SC4897
Collector to Emitter Saturation Voltage
vs. Base Current
10
I
= 12 A
C
14 A
16 A
18 A
5
0
Tc = 25 °C
0.1 0.2
0.5
1
2
B
5
10
Base Current
I
(A)
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