2SC4898 [PANASONIC]
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching); 硅NPN三重扩散平面类型（高击穿电压高速开关）
| 型号： | 2SC4898 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC4898
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
Features
High-speed switching
9.9±0.3
■
2.9±0.2
●
●
High collector to base voltage VCBO
φ3.2±0.1
●
Low collector to emitter saturation voltage VCE(sat)
1.4±0.2
2.6±0.1
Absolute Maximum Ratings (T =25˚C)
■
1.6±0.2
C
Parameter
Symbol
VCBO
VCEO
ICP
Ratings
Unit
V
0.8±0.1
0.55±0.15
Collector to base voltage
Collector to emitter voltage
Peak collector current
Collector current
1000
2.54±0.3
3
5.08±0.5
500
V
1
2
10
A
IC
5
A
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
Collector power TC=25°C
40
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
IEBO
hFE
Conditions
min
typ
max
100
100
40
Unit
µA
Collector cutoff current
Emitter cutoff current
VCB = 1000V, IE = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 1A
IC = 3A, IB = 0.6A
µA
Forward current transfer ratio
20
Collector to emitter saturation voltage VCE(sat)
1
V
MHz
µs
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
V
CE = 10V, IC = 0.5A, f = 1MHz
8
1.5
3
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 250V
µs
1.0
µs
1
Power Transistors
2SC4898
IC — VCE
VCE(sat) — IC
hFE — IC
10
9
8
7
6
5
4
3
2
1
0
10
1000
IC/IB=5
TC=25˚C
TC=25˚C
VCE=5V
TC=25˚C
3
1
300
100
0.3
0.1
IB=0.7A
30
10
0.6A
0.5A
0.4A
0.3A
0.03
0.01
0.2A
0.1A
3
1
0.003
0.001
0
2
4
6
8
10
12
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
(
V
)
(
A
)
( )
Collector current IC A
Collector to emitter voltage VCE
Collector current IC
Area of safe operation (ASO)
Area of safe operation, reverse bias ASO
100
6
IC/IB=5
IB1=–IB2
Lcoil=100µH
TC=25˚C
ICP
IC
5
4
3
2
1
0
10
1
t=0.5ms
1ms
1s
10ms
0.1
0.01
Non repetitive pulse
TC=25˚C
<1mA
0.001
1
3
10
30
100 300 1000
0
200 400 600 800 1000 1200
(
V
)
( )
Collector to emitter voltage VCE V
Collector to emitter voltage VCE
Rth(t) — t
(1)
(2)
Ta=25˚C
(1) Without heat sink
(2) With a 100 × 80 × t2mm Al heat sink
30
10
3
1
0.3
0.3
1
3
10
30
100
300
( )
s
Time
t
2
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