2SC4196QIUR [HITACHI]
Si, NPN, RF SMALL SIGNAL TRANSISTOR;
| 型号： | 2SC4196QIUR |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件： | 总10页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4196
Silicon NPN Epitaxial
Application
UHF Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
3. Collector
2
2SC4196
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
25
15
V
3
V
50
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
25
—
—
V
IC = 10 µA, IE = 0
Collector cutoff current
ICBO
—
—
—
—
—
—
—
—
0.3
10
µA
µA
µA
V
VCB = 15 V, IE = 0
VCE = 15 V, RBE = ∞
VEB = 3 V, IC = 0
ICEO
Emitter cutoff current
IEBO
1.0
0.3
Collector to emitter saturation
voltage
VCE(sat)
IC = 20 mA, IB = 4 mA
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Oscillating output voltage
hFE
50
—
—
180
1.0
—
VCE = 5 V, IC = 5 mA
Cob
fT
0.7
2.4
200
pF
VCB = 10 V, IE = 0, f = 1MHz
VCE = 5 V, IC = 20 mA
1.8
—
GHz
mV
VOSC
—
VCC = 5 V, IC = 5 mA,
f = 930 MHz
Note: Marking is “QI–”.
2
2SC4196
DC Current Transfer Ratio vs.
Collector Current
Maximum Collector Dissipation Curve
200
160
120
80
150
100
50
VCE = 5 V
Pulse
40
0
1
2
5
10
20
50
0
50
100
150
Collector Current IC (mA)
Ambient Temperature Ta (°C)
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1.1
1.0
0.9
0.8
0.7
0.6
4
3
2
1
IE = 0
f = 1 MHz
VCE = 5 V
Pulse
0
1
1
2
5
10
20
50
2
5
10
20
50
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
3
2SC4196
Oscillating Output Voltage vs.
Supply Voltage
Oscillating Output Voltage vs.
Collector Current
1,000
500
1,000
500
f = 930 MHz
f = 930 MHz
IC = 8 mA
VCC = 8 V
5
5
200
100
50
200
100
50
3
3
20
10
20
10
0
2
4
6
8
10
0.5
1.0
2
5
10
20
Supply Voltage VCC (V)
Collector Current IC (mA)
4
2SC4196
S Parameters (Emitter Common)
Test condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz STEP), ZO = 50 Ω
IC = 5 mA
IC = 10 mA
S21-Frequency
S11-Frequency
90°
Scale : 4/div
1
0.8
1.5
0.6
60°
120°
2
0.4
3
150°
30°
4
0.2
0
5
10
0.2
0.4
0.6 0.8
1
1.5
2
3 4 5
10
∞
180°
0°
–10
–0.2
–5
–4
–150°
–30°
–3
–0.4
–2
–60°
–0.6
–120°
–1.5
–0.8
–1
–90°
S12-Frequency
S22-Frequency
Scale : 0.04/div
90°
1
0.8
1.5
0.6
60°
120°
2
0.4
3
150°
30°
4
0.2
0
5
10
0.2
0.4 0.6 0.8
1
1.5
2
3 4 5
10
180°
∞
0°
–10
–0.2
–5
–4
–150°
–30°
–3
–0.4
–2
–60°
–0.6
–120°
–1.5
–0.8
–90°
–1
5
2SC4196
S Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Ω
Freq.
(MHz)
100
S11
S21
S12
S22
MAG.
0.718
0.549
0.439
0.381
0.351
0.340
0.337
0.337
0.343
0.359
ANG.
MAG.
12.498
9.123
6.788
5.348
4.396
3.732
3.240
2.875
2.575
2.355
ANG.
144.9
122.0
108.4
99.3
MAG.
0.026
0.042
0.051
0.060
0.068
0.076
0.085
0.094
0.103
0.112
ANG.
68.8
59.3
57.6
58.5
60.6
62.5
64.3
66.0
67.3
68.4
MAG.
0.895
0.756
0.671
0.626
0.600
0.582
0.569
0.558
0.547
0.538
ANG.
–14.6
–20.3
–21.3
–21.5
–21.8
–22.5
–23.3
–24.4
–25.8
–27.2
–44.8
200
–78.8
300
–102.0
–120.8
–135.5
–148.2
–157.8
–165.2
–173.1
–177.9
400
500
92.4
600
86.7
700
81.7
800
77.3
900
73.4
1000
70.0
Test Condition VCE = 5 V, IC = 10 mA, ZO = 50 Ω
Freq.
(MHz)
100
S11
S21
S12
S22
MAG.
0.553
0.401
0.337
0.314
0.313
0.314
0.327
0.335
0.349
0.354
ANG.
MAG.
17.540
11.066
7.723
5.939
4.816
4.052
3.496
3.090
2.753
2.515
ANG.
133.2
111.3
99.9
92.5
86.7
81.8
77.6
73.8
70.1
67.0
MAG.
0.022
0.033
0.043
0.052
0.063
0.073
0.083
0.093
0.103
0.113
ANG.
64.8
61.3
63.9
66.3
68.6
70.1
71.4
72.4
73.0
74.0
MAG.
0.809
0.659
0.598
0.570
0.555
0.545
0.536
0.530
0.523
0.516
ANG.
–18.0
–20.0
–18.6
–18.1
–18.2
–18.9
–19.9
–21.0
–22.4
–24.0
–65.2
200
–103.4
–127.4
–143.9
–155.7
–165.5
–172.2
–177.7
176.8
300
400
500
600
700
800
900
1000
172.8
6
2SC4196
Y Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA
Freq.
(MHz)
100
Yie (mS)
REAL
Yfe (mS)
REAL
Yre (mS)
REAL
Yoe (mS)
IMAG.
5.491
IMAG.
IMAG.
–0.334
–0.679
–1.034
–1.397
–1.767
–2.134
–2.515
–2.890
–3.305
–3.746
REAL
0.048
0.100
0.191
0.232
0.270
0.347
0.417
0.516
0.614
0.629
IMAG.
0.613
1.238
1.804
2.386
2.947
3.555
4.133
4.703
5.354
5.908
3.035
152.256
131.145
103.025
77.334
55.039
37.290
22.802
11.686
2.225
–40.168
–71.318
–90.187
–98.666
–99.977
–98.247
–93.799
–88.266
–82.972
–78.720
–0.005
–0.015
–0.036
–0.065
–0.090
–0.128
–0.163
–0.193
–0.260
–0.291
200
6.463
10.003
12.356
13.186
12.837
11.913
10.731
9.416
300
10.768
15.089
18.776
22.098
24.568
26.291
28.112
29.685
400
500
600
700
800
900
7.683
1000
6.751
–3.931
Test Condition VCE = 5 V, IC = 10 mA
Freq.
(MHz)
100
Yie (mS)
REAL
Yfe (mS)
REAL
Yre (mS)
REAL
Yoe (mS)
REAL
0.026
0.128
0.216
0.320
0.316
0.378
0.424
0.469
0.563
0.650
IMAG.
7.347
10.820
10.993
10.038
8.943
7.556
6.620
5.569
4.340
3.253
IMAG.
IMAG.
–0.338
–0.682
–1.041
–1.387
–1.766
–2.138
–2.531
–2.923
–3.349
–3.737
IMAG.
0.591
1.254
1.797
2.394
2.917
3.544
4.086
4.659
5.307
5.861
5.903
243.307
168.225
103.210
61.965
35.421
16.762
5.096
–103.091 –0.008
–150.806 –0.022
–155.623 –0.045
–145.393 –0.074
–131.365 –0.093
–118.513 –0.133
–107.291 –0.155
200
11.583
16.546
20.055
22.491
24.417
26.086
27.193
28.543
28.955
300
400
500
600
700
800
–3.874
–11.095
–15.953
–97.359
–88.952
–81.466
–0.185
–0.248
–0.270
900
1000
7
2SC4196
VOSC Test Circuit
V
osc Test Circuit
L3
1 n
VCC
Ferrite
Bead
470
D.U.T.
9 p
L1
47 k
1 n
VT
1.2 p
L2
ISV188
2.2 n
330
6.8 k
Unit R : Ω
C : F
1 n
Vosc
Output
VBB
15
L1 : φ0.8 mm Enameled Copper Wire.
L2 : φ0.8 mm Enameled Copper Wire.
5
Unit : mm
15
15
L3 : Inside dia 3 mm, φ0.3 mm Enameled Copper Wire 10 Turns.
8
Unit: mm
+ 0.10
– 0.06
+ 0.10
– 0.05
0.16
3 – 0.4
0 – 0.1
0.95
0.95
1.9 ± 0.2
2.95 ± 0.2
Hitachi Code
JEDEC
MPAK
—
EIAJ
Conforms
Weight (reference value) 0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
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Tel: <852> (2) 735 9218
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Tel: 535-2100
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Germany
Tel: <49> (89) 9 9180-0
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Taipei Branch Office
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Tel: <886> (2) 2718-3666
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Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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