2SC4203(2-7B2A) [TOSHIBA]
TRANSISTOR 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal;
| 型号： | 2SC4203(2-7B2A) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal |
| 文件： | 总5页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4203
TOSHIBA Transistor Silicon Epitaxial Planar Type
2SC4203
Video Output for High Definition VDT
High Speed Switching Applications
Unit: mm
•
High transition frequency: f = 400 MHz (typ.)
T
(V
CE
= 10 V, I = 70 mA)
C
•
•
•
Low output capacitance: C < 5 pF (max) (V = 30 V)
ob CB
High voltage: V
= 150 V
CEO
High power dissipation: P = 10 W
C
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (pulse)
Base current
V
V
V
180
150
V
V
V
A
A
A
CBO
CEO
EBO
5
I
0.3
C
I
0.5
CP
JEDEC
JEITA
―
―
I
0.2
B
Ta = 25°C
Power dissipation
1.0
P
W
C
Tc = 25°C
10
TOSHIBA
2-7B1A
Junction temperature
T
150
°C
°C
j
Weight: 0.36 g (typ.)
Storage temperature range
T
−55 to 150
stg
JEDEC
JEITA
―
―
TOSHIBA
2-7B2A
Weight: 0.36 g (typ.)
1
2002-07-23
2SC4203
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 150 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
V
V
―
―
―
―
10
10
µA
µA
V
CBO
CB
EB
E
Emitter cut-off current
I
= 5 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= 1 mA, I = 0
150
40
20
―
―
―
C
B
h
h
V
V
= 10 V, I = 50 mA
―
240
―
FE (1)
CE
CE
C
DC current gain
= 10 V, I = 200 mA
―
FE (2)
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
I
I
= 200 mA, I = 20 mA
―
2.0
1.5
―
V
V
CE (sat)
BE (sat)
C
C
B
V
= 200 mA, I = 20 mA
―
―
B
f
V
V
= 10 V, I = 70 mA
300
―
400
4.0
MHz
pF
T
CE
CB
C
Collector output capacitance
C
= 30 V, f = 1 MHz, I = 0
5.0
ob
E
Marking
C4203
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
2
2002-07-23
2SC4203
I
– V
V
– I
BE C
C
CE
240
200
160
120
80
500
400
Common emitter
Tc = 25°C
Common emitter
Tc = 25°C
1
0.9
0.8
0.7
0.6
0.5
0.4
300
200
Tc = 100°C
0.3
0.2
25
−25
100
0
I
= 0.1 mA
B
40
0
0
20
40
60
80
100
120
(V)
140
0.4
0.5
0.6
0.7
0.8
0.9
(V)
1.0
Collector-emitter voltage
V
Base-emitter voltage
V
BE
CE
h
– I
h
– I
FE C
FE
C
300
100
300
100
Common emitter
Tc = 25°C
Common emitter
= 10 V
V
CE
Tc = 100°C
25
V
= 20 V
CE
−25
5
10
50
30
50
30
0.1
0.3
1
3
10
30
100
300 1000
0.1
0.3
1
3
10
30
100
(mA)
300 1000
Collector current
I
C
(mA)
Collector current
I
C
V
– I
V
– I
CE (sat) C
CE (sat)
C
3
1
3
1
Common emitter
Tc = 25°C
Common emitter
I
/I = 10
C B
0.5
0.3
0.5
0.3
Tc = 100°C
I
/I = 20
C B
0.1
0.1
25
−25
10
0.05
0.03
5
0.05
0.03
0.1
0.3
1
3
10
30
100
300 1000
0.1
0.3
1
3
10
30
100
300
1000
Collector current
I
C
(mA)
Collector current
I
C
(mA)
3
2002-07-23
2SC4203
V
– I
f – I
T C
BE (sat)
C
3
1
500
300
Common emitter
Tc = 25°C
V
CE
= 10 V
5
100
50
30
I
/I = 20
C B
Common emitter
Tc = 25°C
10
5
10
0.5
0.3
1
3
10
Collector current
30
100
300
I
C
(mA)
0.1
0.3
1
3
10
30
100
300 1000
Collector current
I
C
(mA)
C
ob
– V
CB
30
10
I
= 0
E
f = 1 MHz
Tc = 25°C
5
3
1
1
3
10
30
100
Collector-base voltage
V
(V)
CB
P
– Ta
C
12
10
8
(1) Tc = Ta infinite heat sink
(2) No heat sink
(1)
6
4
2
(2)
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
4
2002-07-23
2SC4203
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
5
2002-07-23
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