2SC2471 [HITACHI]

Silicon NPN Epitaxial; NPN硅外延
2SC2471
型号: 2SC2471
厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述:

Silicon NPN Epitaxial
NPN硅外延

晶体 晶体管
文件: 总7页 (文件大小:33K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC2471  
Silicon NPN Epitaxial  
Application  
UHF Amplifier  
UHF TV Tuner, Local oscillator  
Outline  
TO-92 (2)  
1. Base  
2. Emitter  
3. Collector  
3
2
1
2SC2471  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
30  
30  
V
3
V
50  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
310  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Collector to base breakdown  
voltage  
V(BR)CBO  
30  
30  
3
V
IC = 10 µA, IE = 0  
Collector to emitter breakdown V(BR)CEO  
voltage  
V
V
IC = 1 mA, RBE = ∞  
IE = 10 µA, IC = 0  
Emitter to base breakdown  
voltage  
V(BR)EBO  
Collector cutoff current  
Emitter cutoff current  
ICBO  
IEBO  
100  
100  
300  
nA  
nA  
mV  
VCB = 24 V, IE = 0  
VEB = 2 V, IC = 0  
Collector to emitter saturation VCE(sat)  
voltage  
IC = 10 mA, IB = 5 mA  
Base to emitter voltage  
DC current transfer ratio  
Gain bandwidth product  
Collector output capacitance  
Base time constant  
VBE  
0.95  
V
VCE = 10 V, IC = 5 mA  
VCE = 10 V, IC = 5 mA  
VCE = 10 V, IC = 5 mA  
VCB = 10 V, IE = 0, f = 1 MHz  
hFE  
20  
fT  
1000  
2000  
0.9  
12  
MHz  
pF  
Cob  
rbb’ CC  
1.5  
20  
ps  
VCB = 10 V, IC = 5 mA,  
f = 31.8 MHz  
2
2SC2471  
DC Current Transfer Ratio vs.  
Collector Current  
100  
80  
60  
40  
20  
0
Maximum Collector Dissipation Curve  
400  
300  
200  
100  
VCE = 10 V  
1
2
5
10  
20  
50  
50  
100  
150  
0
Collector Current IC (mA)  
Ambient Temperature Ta (°C)  
Collector Output Capacitance vs.  
Collector to Base Voltage  
Gain Bandwidth Product vs.  
Collector Current  
5
2,500  
2,000  
1,500  
f = 1 MHz  
IE = 0  
VCE = 10 V  
2
1.0  
0.5  
1,000  
500  
0
0.2  
0.1  
1
2
5
10  
20  
50  
1
2
5
10  
20  
50  
Collector to Base Voltage VCB (V)  
Collector Current IC (mA)  
3
2SC2471  
Base Time Constant vs.Collector Current  
Input Admittance vs. Frequency  
50  
40  
30  
20  
10  
100  
50  
bib  
VCB = 10 V  
f = 31.8 MHz  
VCB = 10 V  
20  
10  
5
I
C = 5 mA  
Common Base  
ib = gib + jbib  
gib  
y
2
1.0  
0.5  
0.2  
0.1  
4
8
12  
16  
20  
0
100  
200  
500  
1,000  
Collector Current IC (mA)  
Frequency f (MHz)  
Forward Transfer Admittance vs.  
Frequency  
Output Admittance vs. Frequency  
VCB = 10 V  
100  
80  
100  
50  
bfb  
I
C = 5 mA  
Common Base  
ob = gob + jbob  
VCB = 10 V  
C = 5 mA  
Common Base  
fb = gfb + jbfb  
60  
I
20  
y
40  
y
10  
5
20  
bob  
gfb  
0
2
1.0  
0.5  
–20  
–40  
–60  
–80  
–100  
gob  
0.2  
0.1  
100  
200  
500  
1,000  
100  
200  
500  
1,000  
Frequency f (MHz)  
Frequency f (MHz)  
4
2SC2471  
Reverse Transfer Admittance vs.  
Frequency  
4
2
VCB = 10 V  
I
C = 5 mA  
Common Base  
yrb = grb + jbrb  
grb  
0
–2  
–4  
–6  
brb  
100  
200  
500  
1,000  
Frequency f (MHz)  
5
Unit: mm  
4.8 ± 0.3  
3.8 ± 0.3  
0.60 Max  
0.45 ± 0.1  
0.5  
1.27  
2.54  
Hitachi Code  
JEDEC  
EIAJ  
TO-92 (2)  
Conforms  
Conforms  
Weight (reference value) 0.25 g  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  

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