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2SC2480 [PANASONIC]

Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing); NPN硅外延平面型（适用于高频放大/振荡/混合）
2SC2480
型号： 2SC2480
厂家： PANASONIC    PANASONIC
描述：

Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing)
NPN硅外延平面型（适用于高频放大/振荡/混合）
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Transistors  
2SC2480  
Silicon NPN epitaxial planer type  
Unit: mm  
+0.10  
–0.05  
0.40  
3
For high-frequency amplification / oscillation / mixing  
+0.10  
0.16  
–0.06  
I Features  
• High transition frequency fT  
1
2
(0.95) (0.95)  
• Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1.9 0.1  
+0.20  
2.90  
–0.05  
10°  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
30  
1: Base  
2: Emitter  
3: Collector  
JEDEC: TO-236  
EIAJ: SC-59  
Mini Type Package  
20  
V
3
50  
V
mA  
mW  
°C  
°C  
Marking Symbol: R  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Tstg  
−55 to +150  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Collector to base voltage  
Emitter to base voltage  
Forward current transfer ratio  
Base to emitter voltage  
Transition frequency *  
Symbol  
VCBO  
VEBO  
hFE  
Conditions  
Min  
30  
3
Typ  
Max  
Unit  
V
IC = 100 µA, IE = 0  
IE = 10 µA, IC = 0  
V
VCB = 10 V, IE = −2 mA  
25  
250  
VBE  
fT  
VCB = 10 V, IE = −2 mA  
720  
1 300 1 600  
mV  
MHz  
pF  
VCB = 10 V, IE = −15 mA, f = 200 MHz  
VCB = 10 V, IE = −1 mA, f = 10.7 MHz  
VCE= 6 V, IC = 0, f = 1 MHz  
VCB = 10 V, IE = −1 mA, f = 200 MHz  
800  
Cre  
1
1.5  
Common emitter reverse transfer  
capacitance  
Crb  
0.8  
20  
pF  
Power gain  
PG  
dB  
Note) : Rank classification  
*
Rank  
T
S
No-rank  
fT (MHz)  
800 to 1 400 1 000 to 1 600 800 to 1 600  
RT RS  
Marking symbol  
R
Product of no-rank is not classified and have no indication for rank.  
1
2SC2480  
Transistors  
PC Ta  
IC VCE  
IC IB  
24  
20  
16  
12  
8
240  
200  
160  
120  
80  
24  
20  
16  
12  
8
Ta = 25°C  
VCE = 10 V  
Ta = 25°C  
IB = 300 µA  
250 µA  
200 µA  
150 µA  
100 µA  
50 µA  
4
40  
4
0
0
0
0
100  
200  
300  
400  
500  
0
40  
80  
120  
160  
0
2
4
6
8
10 12 14 16 18  
Base current IB (µA)  
Ambient temperature Ta (°C)  
Collector to emitter voltage VCE (V)  
IB VBE  
IC VBE  
hFE IC  
400  
350  
300  
250  
200  
150  
100  
50  
60  
50  
40  
30  
20  
10  
0
240  
200  
160  
120  
80  
VCE = 10 V  
VCE = 10 V  
VCE = 10 V  
25°C  
Ta = 25°C  
Ta = 75°C  
−25°C  
Ta = 75°C  
25°C  
−25°C  
40  
0
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
0.4  
0.8  
1.2  
1.6  
2.0  
0.1 0.3  
1
3
10  
30  
100  
Base to emitter voltage VBE (V)  
Base to emitter voltage VBE (V)  
Collector current IC (mA)  
VCE(sat) IC  
fT IE  
Cre VCE  
1 600  
1 400  
1 200  
1 000  
800  
100  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0
IC / IB = 10  
VCB = 10 V  
Ta = 25°C  
IC = 1 mA  
f = 10.7 MHz  
30  
10  
Ta = 25°C  
3
1
Ta = 75°C  
600  
0.3  
0.1  
25°C  
400  
–25°C  
200  
0.03  
0.01  
0
− 0.1 − 0.3 −1  
−3  
−10 −30 −100  
0.1 0.3  
1
3
10  
30  
100  
0.1 0.3  
1
3
10  
30  
100  
Collector current IC (mA)  
Emitter current IE (mA)  
Collector to emitter voltage VCE (V)  
2
Transistors  
2SC2480  
Zrb IE  
PG IE  
NF IE  
40  
35  
30  
25  
20  
15  
10  
5
120  
100  
80  
60  
40  
20  
0
12  
10  
8
VCB = 10 V  
f = 2 MHz  
Ta = 25°C  
VCB = 10 V  
f = 100 MHz  
Rg = 50 Ω  
VCB = 10 V  
f = 100 MHz  
Rg = 50 Ω  
Ta = 25°C  
Ta = 25°C  
6
4
2
0
0
− 0.1 − 0.2− 0.3− 0.5 −1  
−2 −3 −5 −10  
− 0.1 − 0.3 −1  
−3  
−10 −30 −100  
− 0.1 − 0.3 −1  
−3  
−10 −30 −100  
Emitter current IE (mA)  
Emitter current IE (mA)  
Emitter current IE (mA)  
bib gib  
brb grb  
bfb gfb  
0
48  
40  
32  
24  
16  
8
0
−10  
−20  
−30  
−40  
−50  
−60  
200  
yrb = grb + jbrb  
VCB = 10 V  
yfb = gfb + jbfb  
VCB = 10 V  
yib = gib + jbib  
VCB = 10 V  
300  
500  
− 0.4  
f = 200 MHz  
IE = −5 mA  
−2 mA  
− 0.8  
−1.2  
−1.6  
−2.0  
−2.4  
IE = −2 mA  
300  
600  
f = 900 MHz  
−5 mA  
500  
600  
600  
f = 900 MHz  
500  
300  
−2 mA  
IE = −5 mA  
200  
900  
0
−60  
−1.0 − 0.8 − 0.6 − 0.4 − 0.2  
0
−40  
−20  
0
20  
40  
0
10  
20  
30  
40  
50  
Reverse transfer conductance grb (mS)  
Forward transfer conductance gfb (mS)  
Input conductance gib (mS)  
bob gob  
12  
10  
8
yob = gob + jbob  
900  
VCE = 10 V  
600  
IE = −2 mA  
−5 mA  
500  
6
4
300  
2
f = 200 MHz  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
Output conductance gob (mS)  
3

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