2SC1921RF [HITACHI]
Small Signal Bipolar Transistor, 0.05A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | 2SC1921RF |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.05A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon |
| 文件： | 总6页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC1921
Silicon NPN Triple Diffused
Application
•
•
High frequency high voltage amplifier
Video output
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SC1921
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
250
200
V
5
V
50
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
600
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
250
200
5
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
V
Collector cutoff current
DC current transfer ratio
ICEO
hFE
—
30
—
—
—
—
1.0
300
1.0
µA
VCE = 120 V, RBE = ∞
VCE = 6 V, IC = 10 mA
IC = 10 mA, IB = 1 mA
Collector to emitter saturation VCE(sat)
voltage
V
Gain bandwidth product
fT
60
—
130
3
—
4
MHz
pF
VCE = 6 V, IC = 10 mA
Collector output capacitance
Cob
VCB = 6 V, IE = 0, f = 1 MHz
2
2SC1921
Typical Output Characteristics
200
Maximum Collector Dissipation Curve
20
16
12
8
600
400
200
180
160
140
120
100
80
60
40
4
20 µA
IB = 0
12 16
0
4
8
20
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
120
100
80
50
Ta = 75°C
Ta = 75°C
25
–25
20
10
5
25
–25
60
VCE = 6 V
40
2
1
VCE = 6 V
20
0.4
0.5
0.6
0.7
0.8
0.9
1
2
5
10
20
50
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
3
2SC1921
Collector to Emitter Saturation Voltage vs.
Collector Current
Gain Bandwidth Product vs.
Collector Current
200
100
50
0.5
0.4
0.3
0.2
IC = 10 IB
Ta = 75
°C
VCE = 6 V
20
10
0.1
0
1
2
5
10
20
1
2
5
10
20
50
Collector Current IC (mA)
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
20
10
5
f = 1 MHz
E = 0
I
2
1.0
0.5
0.2
2
5
10
20
50 100 200
Collector to Base Voltage VCB (V)
4
Unit: mm
4.8 ± 0.3
3.8 ± 0.3
0.65 ± 0.1
0.75 Max
0.60 Max
0.5 ± 0.1
0.5
1.27
2.54
Hitachi Code
JEDEC
TO-92 Mod
—
EIAJ
Conforms
Weight (reference value) 0.35 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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