MUR1020-28F-29CT [HDSEMI]
TO-220 Plastic-Encapsulate Diodes;
| 型号： | MUR1020-28F-29CT |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | TO-220 Plastic-Encapsulate Diodes |
| 文件： | 总3页 (文件大小：1257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR1020(F)CT THRU MUR1060(F)CT
HD TO73
TO-220 Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
●I
10A
o
ITO- 220AB
TO- 220AB
●VRRM
200V-600V
●High surge current capability
Glass passivated chip
●
Applications
●Rectifier
1
1
2
Marking
2
3
3
● MUR10XX(F)CT
PIN 1
PIN 3
PIN 2
CASE
:
XX From 20 To 60
MUR10-(F)CT
Item
Symbol
Unit
Test Conditions
20
40
60
VRRM
Io
V
A
Repetitive Peak Reverse Voltage
Average Rectified Output Current
200
400
600
60HZ Half-sine wave, Resistance
load, Tc(Fig.1)
10
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
A
120
TJ
℃
℃
-55~+150
Junction Temperature
Storage Temperature
TSTG
-55 ~ +150
Electrical Characteristics (T =25℃ Unless otherwise specified）
a
MUR10-(F)CT
Item
Symbol
Unit
Test Condition
20
40
60
VF
IF =5.0A
V
1.0
1.3
1.7
Peak Forward Voltage
Peak Reverse Current
IRRM1
IRRM2
T =25℃
10
a
uA
V RM=VRRM
T =125℃
500
a
IF=0.5A IRM=1A
RR=0.25A
ns
Reverse Recovery Time
Trr
50
I
Thermal
Resistance(Typical)
Rθ
℃/W
30
J-A
(Note1)
Typical Junction
Capacitance(Note2)
150
Cj
pF
NOTE1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
NOTE2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
24
10
8
140
120
100
80
60
40
20
0
8.3ms Single Half Sine Wave
JEDEC Method
6
4
2
0
50
70
90
110
130
150
Tc(℃)
1
10
100
Number of Cycles
FIG3:Instantaneous Forward Voltage
FIG.4:TYPICAL REVERSE CHARACTERISTICS
45
1000
30
15
10
100
MUR1020(F)CT
Tj=125℃
10
5.0
Tj=100℃
Tj=25℃
1.0
MUR1040(F)CT
MUR1060(F)CT
1.0
0.5
0.1
0.2
0.1
0.01
Ta=25℃
0
20
40
60
80
100
0
0.2
Voltage(%)
0.4 0.6
1.4
1.2
1.8 2.0 2.2 2.4
VF(V)
0.8
1.6
1.0
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
RL
IF
VR
t
0
IRR
IR
2
H
igh Diode Semiconductor
TO- 220
TO-220AB
ITO-220AB
JSHD
JSHD
3
H
igh Diode Semiconductor
相关型号：
MUR1020CT
Plastic Ultra-Fast Recover Rectifier Reverse Voltage 100 to 600 V Forward Current 10 A
DACHANG
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