MUR1020AT [THINKISEMI]
10.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers;
| 型号： | MUR1020AT |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 10.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR1020AT thru MUR1060AT
MUR1020AT/MUR1040AT/MUR1060AT
Pb Free Plating Product
10.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers
TO-220AB(TO-220-3L)
Unit:inch(mm)
Features
※ Fast switching for high efficiency
※ Low forward voltage drop
※ High current capability
※ Low reverse leakage current
※ High surge current capability
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.038(0.96)
.025(0.65)MAX
.019(0.50)
Mechanical Data
.1(2.54)
.1(2.54)
※ Case: Open Heatsink Package TO-220AB
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
Case
Case
Case
Case
※ Weight: 2.2 gram approximately
Doubler
Series
Negative
Positive
Common Cathode
Common Anode
Suffix "AT"
Tandem Polarity
Suffix "ST"
Tandem Polarity
Suffix "DT"
Suffix "CT"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
UNIT
MUR1020AT MUR1040AT MUR1060AT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current Tc=100℃
10.0
125
1.3
IF(AV)
IFSM
VF
A
A
V
(Total Device 2x5.0A=10.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)
Maximum Instantaneous Forward Voltage
@5.0A
0.98
1.7
(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25℃
5.0
100
μA
μA
IR
℃
At Rated DC Blocking Voltage @TJ=125
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
35
65
Trr
CJ
nS
pF
1.5
RθJC
℃/W
Operating Junction and Storage
Temperature Range
-55 to +150
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
MUR1020AT thru MUR1060AT
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
10.0
8.0
6.0
4.0
2.0
0
125
100
75
50
25
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
60 Hz Resistive or
Inductive load
0
50
100
150
1
10
100
CASE TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
1000
TJ=125oC
100
MUR1040AT
MUR1020AT
1.0
0.1
10
MUR1060AT
TJ=25oC
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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