HMS1M32Z8A-15 [HANBIT]
SRAM MODULE 4Mbyte(1M x 32-Bit) , 64-Pin SIMM Design; SRAM模块4Mbyte （ 1M ×32位） ， 64引脚SIMM设计
| 型号： | HMS1M32Z8A-15 |
| 厂家： | 
HANBIT ELECTRONICS CO.,LTD |
| 描述： | SRAM MODULE 4Mbyte(1M x 32-Bit) , 64-Pin SIMM Design |
| 文件： | 总9页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HANBit
HMS1M32M8A/Z8A
H A N
SRAM MODULE 4Mbyte(1M x 32-Bit) , 64-Pin SIMM Design
B I T
HMS1M32M8A, HMS1M32Z8A
Part No.
GENERAL DESCRIPTION
The HMS1M32M8A is a high-speed static random access memory (SRAM) module containing 1,048,576 words
organized in a x32-bit configuration. The module consists of eight 1M x 4 SRAMs mounted on a 64-pin, double-
sided, FR4-printed circuit board.
Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently.
Output enable (/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
PIN ASSIGNMENT
Access times : 10, 12, 15, 17 and 20ns
1
3
5
7
Vss
A19
A18
DQ0
DQ1
DQ2
DQ3 10
Vcc 12
A7 14
A8 16
A9 18
2
4
6
8
High-density 4MByte design
DQ8
DQ9
DQ10
DQ11
A0
High-reliability, high-speed design
Single + 5V ±0.5V power supply
Easy memory expansion with /CE and /OE functions
All inputs and outputs are TTL-compatible
Industry-standard pinout
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
A1
A2
DQ12
DQ13
DQ14
DQ15
Vss
DQ4 20
DQ5 22
DQ6 24
DQ7 26
/ WE 28
A14 30
/ CE1 32
/ CE3 34
A16 36
Vss 38
DQ16 40
DQ17 42
DQ18 44
DQ19 46
A10 48
A11 50
A12 52
A13 54
DQ20 56
DQ21 58
DQ22 60
DQ23 62
Vss 64
Part identification
- HMS1M32M8A : 64Pin SIMM Design
- HMS1M32Z8A : 64Pin ZIP Design
→ Pin-Compatible with the HMS1M32M8A
A15
/ CE2
/ CE4
A17
/ OE
DQ24
DQ25
DQ26
DQ27
A3
A4
A5
Vcc
A6
OPTIONS
Timing
MARKING
10ns access
12ns access
15ns access
17ns access
20ns access
Packages
-10
-12
-15
-17
-20
DQ28
DQ29
DQ30
DQ31
ZIP
TOP VIEW
64-pin SIMM
64-pin ZIP
M
Z
1
HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8A/Z8A
FUNCTIONAL BLOCK DIAGRAM
32
DQ0 - DQ31
20
A0 - A19
A0-19
A0-19
DQ 0-3
DQ 4-7
/WE
/WE
/OE
U1
U5
/OE
/CE
/CE
/CE1
A0-19
A0-19
DQ 8-11
DQ12-15
/WE
/WE
/OE
U2
U6
/OE
/CE
/CE
/CE2
A0-19
/WE
A0-19
/WE
DQ16-19
DQ20-23
/OE
/OE
U3
U7
/CE
/CE
/CE3
A0-19
A0-19
DQ24-27
DQ28-31
/WE
/WE
/OE
/WE
/OE
U4
U8
/OE
/CE
/CE
/CE4
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
/OE
X
/CE
/WE
X
OUTPUT
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
H
L
L
L
HIGH-Z
HIGH-Z
DOUT
H
H
L
H
WRITE
X
L
DIN
2
HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8A/Z8A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VIN,OUT
VCC
RATING
-0.5V to +7.0V
-0.5V to +7.0V
8W
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
PD
o
o
Storage Temperature
TSTG
-65 C to +150 C
o
o
Operating Temperature
TA
0 C to +70 C
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
o
RECOMMENDED DC OPERATING CONDITIONS
( T =0 to 70 C )
A
PARAMETER
SYMBOL
MIN
4.5V
0
TYP.
MAX
5.5V
Supply Voltage
VCC
5.0V
Ground
VSS
0
-
0
Input High Voltage
Input Low Voltage
VIH
2.2
Vcc+0.5V**
0.8V
VIL
-0.5*
-
*
V (Min.) = -2.0V ac (Pulse Width 10ns) for I 20 mA
≤ ≤
IL
V (Min.) = Vcc+2.0V ac (Pulse Width 10ns) for I 20 mA
**
≤
≤
IH
o
o
DC AND OPERATING CHARACTERISTICS (1)(0 C
T
70 C ; Vcc = 5V 0.5V )
≤
≤
±
A
SYMBO
L
PARAMETER
TEST CONDITIONS
VIN =Vss to Vcc
MIN
MAX
UNITS
Input Leakage Current
ILI
-2
2
A
µ
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
IOH = -4.0Ma
Output Leakage Current
IL0
-2
2
A
µ
Output High Voltage
Output Low Voltage
VOH
VOL
2.4
V
IOL = 8.0Ma
0.4
V
o
* Vcc=5.0V, Temp=25 C
DC AND OPERATING CHARACTERISTICS (2)
MAX
-12
DESCRIPTION
TEST CONDITIONS
Min. Cycle, 100% Duty
/CE=VIL, VIN=VIH or VIL,
IOUT=0mA
SYMBOL
-10
-15
UNIT
Power Supply
Current: Operating
lCC
195
190
185
mA
Min. Cycle, /CE=VIH
lSB
50
10
50
10
50
10
mA
mA
Power Supply
Current :Standby
f=0MHZ, /CE V -0.2V,
≥
CC
lSB1
VIN V -0.2V or V 0.2V
≥
≤
IN
CC
3
HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8A/Z8A
CAPACITANCE
DESCRIPTION
TEST CONDITIONS
VI/O=0V
SYMBOL
CI/O
MAX
UNIT
pF
Input /Output Capacitance
Input Capacitance
8
7
VIN=0V
CIN
pF
: Capacitance is sampled and not 100% tested
* NOTE
o
o
AC CHARACTERISTICS (0 C
TEST CONDITIONS
T
70 C ; Vcc = 5V 0.5V, unless otherwise specified)
≤
≤
±
A
PARAMETER
VALUE
0 to 3V
3ns
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
1.5V
See below
Output Load (B)
Output Load (A)
VL=1.5V
for tHZ, tLZ, tWHZ, tOW, tOLZ
+5.0V
& tOHZ
50
Ω
480
Ω
DOUT
DOUT
Z0=50
Ω
255
Ω
30pF
5pF*
READ CYCLE
-10
-12
-15
PARAMETER
SYMBOL
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
Read Cycle Time
tRC
tAA
tCO
tOE
tLZ
10
-
-
10
10
5
12
-
-
12
12
6
15
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
15
15
7
Address Access Time
Chip Select to Output
-
-
-
Output Enable to Output
-
-
-
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Output Disable to High-Z Output
Chip Disable to High-Z Output
Output Hold from Address Change
Chip Select to Power Up Time
Chip Select to Power Down Time
3
0
0
0
3
0
-
-
3
0
0
0
3
0
-
3
0
0
0
3
0
-
-
tOLZ
tOHZ
tHZ
tOH
tPU
-
-
-
5
6
7
5
6
7
-
-
-
-
-
-
tPD
10
12
15
4
HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8A/Z8A
WRITE CYCLE
-10
-12
-15
PARAMETER
SYMBOL
UNIT
MIN
10
7
MAX
MIN
12
8
MAX
MIN
15
10
0
MAX
Write Cycle Time
tWC
tCW
tAS
-
-
-
-
-
-
5
-
-
-
-
-
-
-
-
-
7
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
-
-
-
-
6
-
-
-
Chip Select to End of Write
Address Set-up Time
0
0
Address Valid to End of Write
Write Pulse Width (/OE High)
Write Recovery Time
tAW
tWP
tWR
tWHZ
tDW
tDH
7
8
10
10
0
7
8
0
0
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
0
0
0
5
6
7
0
0
0
tOW
3
3
3
TIMING DIAGRAMS
( Address Controlled)( /CE =/OE = V , /WE = V )
TIMING WAVEFORM OF READ CYCLE
IL
IH
tRC
Address
tAA
tOH
Data out
Previous Data Valid
Data Valid
( /WE = V
)
TIMING WAVEFORM OF READ CYCLE
IH
tRC
Address
tHZ(3,4,5)
tAA
tCO
/CE
/OE
tLZ(4,5)
tOHZ
tOE
tOH
tOLZ
High-Z
Data Out
Data Valid
tPD
tPU
50%
lCC
lSB
Vcc Supply
Current
50%
5
HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8A/Z8A
(Read Cycle)
Notes
1. /WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH
or VOL levels.
4. At any given temperature and voltage condition, tHZ (max.) is less than tLZ (min.) both for a given device and from device
to device.
5. Transition is measured 200mV from steady state voltage with Load (B). This parameter is sampled and not 100%
±
tested.
6. Device is continuously selected with /CE = VIL.
7. Address valid prior to coincident with /CE transition low.
(/OE = Clock )
TIMING WAVEFORM OF WRITE CYCLE
tWC
Address
/OE
tAW
tWR(5)
tCW(3)
/CE
tAS(4)
tWP(2)
/WE
tDW
tDH
High-Z
Data In
Data Valid
tOHZ
tOW
Data Out
High-Z
(/OE Low Fixed)
TIMING WAVEFORM OF WRITE CYCLE
tWC
Address
tAW
tWR(5)
tCW(3)
/CE
tAS(4)
tOH
tWP(2)
/WE
tDW
tDH
High-Z
Data In
Data Valid
tWHZ(6,7)
tOW
(10)
(9)
High-Z(8)
Data Out
6
HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8A/Z8A
(Write Cycle)
Notes
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low /CE and a low /WE. A write begins at the latest transition among
/CE going low and /WE going low: A write ends at the earliest transition among /CE going high and /WE going high.
tWP is measured from the beginning of write to the end of write.
3. tCW is measured from the later of /CE going low to the end of write.
4. tAS is measured from the address valid to the beginning of wirte.
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CE, or /WE going high.
6. If /OE,/CE and /WE are in the read mode during this period, the I/O pins are in the output low-Z state. Inputs of
opposite phase of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and
write cycle.
8. If /CE goes low simultaneously with /WE going low or after /WE going low, the outputs remain high impedance state.
9. DOUT is the read data of the new address.
10. When /CE is low: I/O pins are in the output state. The input signals in the opposite phase leading to the output
should not be applied.
FUNCTIONAL DESCRIPTION
/CE
H
/WE
X*
H
/OE
X
MODE
Not Select
Output Disable
Read
I/O PIN
High-Z
High-Z
DOUT
SUPPLY CURRENT
I SB, I SB1
ICC
L
H
L
H
L
ICC
L
L
X
Write
DIN
ICC
Note: X means Don't Care
7
HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8A/Z8A
PACKAGING DIMMENSIONS
SIMM Design
9 8 .0 4 m m
1 0 .1 6 m m
6 .3 5 m m
1 6 m m
6 4
1
2 .0 3 m m
1 .0 2 m m
6 .3 5 m m
1 .2 7 m m
3 .3 4 m m
6 .3 5 m m
8 5 .0 9 m m
2 .5 4 m m
MIN
0 .2 5 m m MAX
Gold : 1 .0 4 ±0 .1 0 m m
1 .2 9 ±0 .0 8 m m
1 .2 7
Sold er : 0 .9 1 4 ±0 .1 0 m m
(Solder & Gold Plating Lead)
ZIP Design
8 9 m m
CUT 1 .5 m m
1 4 m m
6 4
1
6 m m
2 m m
4 0 m m
2 .5 4 m m
9 0 m m
1 .2 9 ±0 .0 8 m m
2 .5 m m
8
HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8A/Z8A
ORDERING INFORMATION
1
2
3
4
5
6
7
8
H M S 1 M 3 2 M 8 A -1 5
15ns Access Time
HANBit
Component, 64PIN
SIMM
Memory
Modules
x32bit
SRAM
1M
1. - Product Line Identifier
HANBit ------------------------------------------------------ H
2. - Memory Modules
3. - SRAM
4. - Depth : 1M
5. - Width : x 32bit
6. - Package Code
SIMM ------------------------------------------------------- M
ZIP
------------------------------------------------------- Z
7. - Number of Memory Components------8, 64PIN -------------A
8. - Access time
10 ----------------------------------------------------------- 10ns
12 ----------------------------------------------------------- 12ns
15 ----------------------------------------------------------- 15ns
17 ----------------------------------------------------------- 17ns
20 ----------------------------------------------------------- 20ns
9
HANBit Electronics Co.,Ltd.
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