HMS1M32Z8L-70 [HANBIT]
SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER,72Pin SIMM,5V; SRAM模块4Mbyte （ 1Mx32Bit ） ，低功耗， 72PIN SIMM ， 5V
| 型号： | HMS1M32Z8L-70 |
| 厂家： | 
HANBIT ELECTRONICS CO.,LTD |
| 描述： | SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER,72Pin SIMM,5V |
| 文件： | 总7页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HANBit
HMS1M32M8L
SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER,72Pin SIMM,5V
HMS1M32M8L, HMS1M32Z8L
Part No.
GENERAL DESCRIPTION
The HMS1M32M8L is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit
configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board.
The HMS1M32M8L also support low data retention voltage for battery back-up operations with low data retention current. Eight
chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable
the module’s 4M bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is
accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from
a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
w Part identification
PIN ASSIGNMENT
- HMS1M32M8L : SIMM design
PIN SYMBOL PIN
SYMBOL
Vcc
PIN SYMBOL
- HMS1M32Z8L : ZIP design
The both are Pin to Pin Compatible
w Access times : 55ns, 70ns
1
2
Vss
A3
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
DQ17
DQ18
DQ22
DQ21
DQ20
DQ19
Vcc
DQ8
3
A2
DQ9
4
A1
DQ10
/CE_LM2
Vcc
w High-density 4MByte design
w High-reliability, low-power design
w Single + 5V ±0.5V power supply
w Low data retention voltage : 2V(min)
w Three state output and TTL-compatible
w FR4-PCB design
5
A0
6
Vcc
7
A11
/CE_LM1
DQ15
DQ14
DQ13
DQ12
DQ11
A18
8
/OE
A14
9
A10
A12
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Vcc
A7
/CE_LL2
/CE_LL1
DQ7
DQ0
DQ1
DQ2
DQ6
DQ5
DQ4
DQ3
A15
Vcc
w Low profile 72-Pin SIMM
A8
A9
A16
DQ24
DQ25
DQ26
/CE_UU2
/CE_UU1
DQ31
DQ30
DQ29
DQ28
DQ27
Vss
Vss
A6
OPTIONS
w Timing
MARKING
Vcc
A5
55ns access
70ns access
-55
-70
A4
Vcc
/CE_UM2
/CE_UM1
DQ23
DQ16
A17
w Packages
72-pin SIMM
72-pin ZIP
/WE
A13
M
Z
SIMM
TOP VIEW
URL: www.hbe.co.kr
1
HANBit ElectronicsCo.,Ltd.
Rev. 1.0 (September / 2002)
HANBit
HMS1M32M8L
FUNCTIONAL BLOCK DIAGRAM
32
DQ 0-DQ31
19
A0-A18
A0-18
A0-18
DQ24-31
DQ24-31
/WE
/OE
/WE
/OE
U8
U4
/CE
/CE
/CE-UU2
/CE-UU1
A0-18
A0-18
DQ16-23
DQ16-23
/WE
/OE
/WE
/OE
U3
U7
/CE
/CE
/CE-UM1
/CE-UM2
A0-18
A0-18
DQ 8-15
U6
DQ 8-15
U2
/WE
/OE
/WE
/OE
/CE
/CE
/CE-LM1
/CE-LM2
A0-18
A0-18
DQ 0-7
DQ 0-7
U1
/WE
/OE
/WE
/OE
/WE
/OE
U5
/OE
/CE
/CE
/CE-LL1
/CE-LL2
URL: www.hbe.co.kr
2
HANBit ElectronicsCo.,Ltd.
Rev. 1.0 (September / 2002)
HANBit
HMS1M32M8L
TRUTH TABLE
MODE
/OE
X
/CE
H
/WE
X
DQ
HIGH-Z
HIGH-Z
Q
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
STANDBY
NOT SELECTED
READ
H
L
H
L
L
H
WRITE or ERASE
NOTE: X means don’t care
X
L
L
D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
VIN,OUT
VCC
PD
-0.5V to +7.0V
-0.5V to +7.0V
8W
o
o
Storage Temperature
TSTG
TA
-65 C to +150 C
o
o
Operating Temperature
0 C to +70 C
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
o
RECOMMENDED DC OPERATING CONDITIONS ( T =0 to 70 C )
A
PARAMETER
SYMBOL
MIN
4.5V
0
TYP.
MAX
5.5V
Supply Voltage
VCC
5.0V
Ground
VSS
0
-
0
Input High Voltage
Input Low Voltage
VIH
2.2
Vcc+0.5V**
0.8V
VIL
-0.5*
-
*
VIL(Min.) = -2.0V (Pulse Width £ 10ns) for I £ 20 mA
** VIH(Min.) = Vcc+2.0V (Pulse Width £ 10ns) for I £ 20 mA
DC AND OPERATING CHARACTERISTICS (1)
o
o
(0 C £ T £ 70 C ; Vcc = 5V ± 0.5V )
A
PARAMETER
TEST CONDITIONS
VIN = Vss to Vcc
SYMBOL
MIN
MAX
UNITS
Input Leakage Current
ILI
-32
32
mA
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
IOH = -4.0mA
Output Leakage Current
IL0
-32
2.4
32
mA
Output High Voltage
Output Low Voltage
VOH
VOL
V
V
IOL = 8.0mA
0.4
o
* Vcc=5.0V, Temp=25 C
URL: www.hbe.co.kr
3
HANBit ElectronicsCo.,Ltd.
Rev. 1.0 (September / 2002)
HANBit
HMS1M32M8L
DC AND OPERATING CHARACTERISTICS (2)
MAX
DESCRIPTION
TEST CONDITIONS
SYMBOL
UNIT
-70
-55
Power Supply
IIO=0mA,/CE=VIL, VIN=VIL or
VIH, Read
lCC
480
480
mA
Current:Operating
/CE=VIH, Other inputs=VIL or VIH
lSB
96
96
mA
Power Supply
Current:Standby
/CE³ Vcc-0.2V, Other inputs=0~Vcc
lSB1
400
400
mA
CAPACITANCE
DESCRIPTION
TEST CONDITIONS
VI/O=0V
SYMBOL
MAX
UNIT
Input /Output Capacitance
Input Capacitance
CI/O
CIN
248
320
pF
pF
VIN=0V
* NOTE : Capacitance is sampled and not 100% tested
o
o
AC CHARACTERISTICS (0 C £ T £ 70 C ; Vcc = 5V ± 0.5V, unless otherwise specified)
Test conditions
A
PARAMETER
VALUE
0.8 to 2.4V
5ns
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
1.5V
CL=100pF + 1TTL
* See test condition of DC and Operating characteristics
Output Load (B)
Output Load (A)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
VL=1.5V
+3.3V
50W
319W
5pF*
DOUT
DOUT
Z0=50W
353W
30pF
URL: www.hbe.co.kr
4
HANBit ElectronicsCo.,Ltd.
Rev. 1.0 (September / 2002)
HANBit
HMS1M32M8L
READ CYCLE
-55
-70
PARAMETER
SYMBOL
UNIT
MIN
MAX
MIN
70
MAX
Read Cycle Time
tRC
tAA
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
55
55
25
70
70
35
Chip Select to Output
tCO
tOE
tOLZ
tLZ
Output Enable to Output
Output Enable to Low-Z Output
Chip Enable to Low-Z Output
Output Disable to High-Z Output
Chip Disable to High-Z Output
Output Hold from Address Change
5
10
0
5
10
0
tOHZ
tHZ
20
20
25
25
0
0
tOH
10
10
WRITE CYCLE
-55
-70
PARAMETER
SYMBOL
UNIT
MIN
55
45
0
MAX
MIN
70
60
0
MAX
Write Cycle Time
tWC
tCW
tAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
tAW
tWP
tWR
tWHZ
tDW
tDH
45
40
0
60
50
0
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
0
20
0
25
25
0
30
0
tOW
5
5
TIMING DIAGRAMS
Please refer to timing diagram chart(II)
URL: www.hbe.co.kr
5
HANBit ElectronicsCo.,Ltd.
Rev. 1.0 (September / 2002)
HANBit
HMS1M32M8L
FUNCTIONAL DESCRIPTION
/CE
/WE
X*
H
/OE
X
MODE
Not Select
Output Disable
Read
I/O PIN
High-Z
High-Z
DOUT
SUPPLY CURRENT
H
l SB, l SB1
lCC
L
H
L
H
L
lCC
L
L
X
Write
DIN
lCC
Note: X means Don't Care
DATA RETENTION CHARACTERISTICS* (TA = 0 to 70 ℃ )
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
/CE≥ VCC-0.2V
VCC for Data Retention
VDR
2
5.5
V
VCC=3.0V, /CE≥ VCC-0.2V
VIN≥ VCC-0.2V or VIN≤ 0.2V
Data Retention Current
IDR
-
400
mA
Data Retention Set-up Time
Recovery Time
tSDR
tRDR
See Data Retention
Wave forms(below)
0
5
-
-
ns
ns
* L-Version Only
DATA RETENTION WAVEFORM 1 (/CE Controlled)
tRDR
tSDR
Data Retention Mode
Vcc
4.5V
2.2V
VDR
/CE≥ Vcc- 0.2V
/CE
Vss
URL: www.hbe.co.kr
6
HANBit ElectronicsCo.,Ltd.
Rev. 1.0 (September / 2002)
HANBit
HMS1M32M8L
PACKAGING DIMENSIONS
SIMM Design
2.54 mm
MIN
0.25 mm MAX
1.29±0.08 mm
Gold : 1.04±0.10 mm
1.27
Solder : 0.914±0.10 mm
(Solder & Gold Plating Lead)
ORDERING INFORMATION
Component
Number
Part Number
Density
Org.
Package
Vcc
SPEED
HMS1M32M8L-55
HMS1M32M8L-70
4MByte
4MByte
1M´ 32bit
1M´ 32bit
72Pin-SIMM
72Pin--SIMM
8EA
8EA
5.0V
5.0V
5.0V
5.0V
55ns
70ns
55ns
70ns
HMS1M32Z8L-55
HMS1M32Z8L-70
4MByte
4MByte
1M´ 32bit
1M´ 32bit
72Pin-ZIP
72Pin-ZIP
8EA
8EA
URL: www.hbe.co.kr
7
HANBit ElectronicsCo.,Ltd.
Rev. 1.0 (September / 2002)
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