B749 [HAMAMATSU]

Photon drag detector; 光子阻力检测仪
B749
型号: B749
厂家: HAMAMATSU CORPORATION    HAMAMATSU CORPORATION
描述:

Photon drag detector
光子阻力检测仪

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I N F R A R E D D E T E C T O R  
Photon drag detector  
B749  
High-speed detector with high sensitivity in the 10 µm band (for CO  
2
laser detection)  
B749 is a photon drag detector that utilizes the photon drag effect in which carriers created by input photons are dragged in the direction of  
photons, generating an electromotive force. B749 ensures high-speed operation even at room temperatures and has high sensitivity in the 10 µm  
band, making it well suited to detection of CO  
2
lasers. An easy-to-use detector module integrated with a preamplifier (B7506-01) is also available.  
Features  
Applications  
Room temperature operation with high-speed response  
Easy-to-use detector module with amplifier (B7506-01)  
is available  
CO2 laser detection  
ACCESSORIES (Optional)  
Magnet stand  
A1447  
Infrared detector module with preamp  
B7506-01  
General ratings  
I
Parameter  
Specification  
f5  
Unit  
Active area  
mm  
-
Output polarity  
Positive  
Absolute maximum ratings  
I
Parameter  
Symbol  
Topr  
Value  
Unit  
°C  
Operating temperature  
Storage temperature  
0 to +60  
0 to +60  
Tstg  
°C  
Electrical and optical characteristics (T=25 °C)  
I
Parameter  
Symbol  
Condition  
l=10.6 µm  
10 to 90 %  
l=10.6 µm  
Min.  
Typ.  
Max.  
Unit  
mV/kW  
ns  
Photo sensitivity  
S
-
-
-
-
-
1.2  
-
1
-
Rise time  
tr  
-
4 × 10-3  
50  
Noise equivalent power  
Output impedance  
Maximum input light level  
NEP  
W/Hz1/2  
-
-
-
W
J/cm2  
1
-
Photon drag detector B749  
I Dimensional outline (unit: mm)  
B749  
30  
79.5  
BNC  
CONNECTOR  
ACTIVE AREA  
1/4-20UNC  
KIRDA0016EC  
Magnet stand A1447 (sold separately)  
1/4-20UNC  
20  
KIRDA0017EA  
I Precautions for use  
The Ge element mounted in the detector package is susceptible to shocks and drop impacts. Handle the detector with  
extreme care.  
Do not allow light higher than 10 MW/cm2 to strike the detector element, because the element surface might be damaged.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.  
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.  
HAMAMATSU PHOTONICS K.K., Solid State Division  
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com  
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218  
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658  
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10  
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777  
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01  
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741  
Cat. No. KIRD1038E02  
Sep. 2002 DN  

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