BGC30GLH [GXELECTRONICS]
Low VF Rectifier Diode (200V~1000V / 3.0A); 低VF整流二极管（ 200V 〜 1000V / 3.0A ）
| 型号： | BGC30GLH |
| 厂家： | 
Gaomi Xinghe Electronics Co., Ltd. |
| 描述： | Low VF Rectifier Diode (200V~1000V / 3.0A) |
| 文件： | 总2页 (文件大小：313K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
星合 子
XINGHE ELECTRONICS
BGC30DLH THRU BGC30MLH
Low VF Rectifier Diode
(200V~1000V / 3.0A)
OUTLINE DIMENSIONS
FEATURES
Unit : mm
*
*
*
*
*
*
*
Halogen-free type
Lead free product, compliance to RoHS
GPRC (Glass passivated rectifier chip) inside
Glass passivated cavity-free junction
Lead less chip form, no lead damage
Low forward voltage drop
5.2 ± 0.1
0.015
±
95
R0.6
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
1.15 ± 0.1
1.15 ± 0.1
APPLICATION
*
*
General purpose rectification
Surge absorption
JEDEC : DO-214AA / SMB
MARKING
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Cathode Band, Laser marking
Weight : 0.04 gram
Cathode mark
Series code
BGC
30DL
Halogen-free type
.
Low VF
Amps class
PACKING
Voltage class
*
*
*
5,000 pieces per 13" (330mm ± 2mm) reel
2 reels per box
Voltage class:
D = 200V, G = 400V, J = 600V
K = 800V, M = 1000V
5 boxes per carton
Absolute Maximum Ratings (Ta = 25 oC)
ITEM
Rating
Symbol
Unit
V
BGC30DLH
BGC30GLH
BGC30JLH
600
BGC30KLH
800
BGC30MLH
Repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
200
400
1000
3.0
A
Peak forward surge current (8.3ms single half sine-wave)
Operating junction temperature Range
Storage temperature Range
IFSM
Tj
115
110
-65 to +175
-65 to +175
oC
TSTG
Electrical characteristics (Ta = 25 oC)
ITEM
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 3.0A
-
-
0.91
0.93
V
Repetitive peak reverse current
Junction capacitance
IRRM
VR = Max. VRRM , Ta = 25 oC
0.10
5
uA
pF
Cj
VR = 4V, f = 1.0 MHz
-
-
-
29
68
19
-
-
-
Rth(JA)
Rth(JL)
Junction to ambient (NOTE)
Junction to lead (NOTE)
oC/W
Thermal resistance
NOTES : Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
1
GAOMI XINGHE ELECTRONICSCO.,LTD.
WWW.SDDZG.COM
TEL:0536-2210359
QQ:464768017
星合 子
XINGHE ELECTRONICS
BGC30DLH THRU BGC30MLH
Low VF Rectifier Diode
(200V~1000V / 3.0A)
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
3.5
3.0
140
8.3ms SINGLE HALF SINE-WAVE
120
2.5
2.0
1.5
1.0
0.5
100
80
BGC30DLH~BGC30JLH
60
BGC30KLH & BGC30MLH
40
20
0
60Hz
RESISTIVE OR
INDUCTIVE LOAD
0
1
10
100
0
25
50
75
100
125
150
175
LEAD TEMPERATURE, o
C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10.00
1.00
TJ=150oC
10
1.0
TJ=125oC
0.10
0.10
0.01
TJ=25oC
0.01
.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
100
TJ=25oC
10
1
.1
1.0
10
100
REVERSE VOLTAGE, VOLTS
2
GAOMI XINGHE ELECTRONICSCO.,LTD.
WWW.SDDZG.COM
TEL:0536-2210359
QQ:464768017
相关型号：
©2020 ICPDF网 联系我们和版权申明