BGC405 [INFINEON]
Self-Biased BFP405; 自偏置BFP405![BGC405](http://pdffile.icpdf.com/pdf1/p00045/img/icpdf/BGC405_236741_icpdf.jpg)
型号: | BGC405 |
厂家: | ![]() |
描述: | Self-Biased BFP405 |
文件: | 总10页 (文件大小:123K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BGC405
Self-Biased BFP405
5
6
7
SIEGET 25- Technology
Small SCT598-Package
Control Pin For Switching The Device Off
Current Easy Adjustable By An External Resistor
l
8
l
l
l
4
3
Voltage Independent Current (2V – 4.5V)
l
2
1
VPW05982
ESD: Electrostatic discharge sensitive device, observe
handling precautions!
Type
BGC405
Marking
40s
Ordering Code
(8-mm taped)
Package
Pin Configuration
(circuit Diagram)
see below
Q62702-G0091
SCT598
Equivalent Circuit
Vcc
Pin Connections, SCT598
Vr,5
4,Vcc
RFout,6
Active
Bias
3, Vb
Vc
Vr
Circuit
2, GND
GND,7
Vc, 8
RFout
Q1
Vb
1,RFin
Note: Top View
RFin
GND
Description
The BGC405 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current
nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin
(Vc) for switching the device off is provided. The collector current can be adjusted by connecting a
resistor (Rx) between Vcc and Vr.
High Frequency Products
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Edition A13, 06/00
BGC405
Maximum Ratings
Parameter
Symbol
ICC
Unit
mA
V
Device current
12
4.5
Device voltage
Vcc
Ptot
1)
Total power dissipation, Ts ≤ 120°C
Control voltage
54
mW
V
Vc
Vcc+0.5
380
Input Current for pin 1
Ir
µA
Junction temperature
Tj
150
°C
°C
°C
Ambient temperature range
Storage temperature range
TA
Tstg
-65...+150
-65...+150
Thermal Resistance
1)
Junction-soldering point
Rth JS
≤
530
K/W
1)T is measured on the Ground lead at the soldering point to the pcb.
S
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82Ω), Tc=25°C, Vcc=3V, ICC≈7mA unless noted
Symbol Parameter
Unit
Min
19.5
16.5
Typ
21
Max
2
Gp
Power Gain ( S21
)
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dB
18
NF
Noise Figure (in 50Ω System)
dB
dBm
dBm
dB
1.8
2.0
1
2.1
2.3
P-1dB
IP3
Output Power at 1dB Gain Compression f=900MHz
(in 50Ω System)
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
0.5
15
Third Order Intercept Point
(Output,ΓOpt
)
15
RLin
RLout
Input Return Loss
5
8
Output Return Loss
dB
1.5
3
ton
On Switching Time3)
Off Switching Time3)
µs
µs
µA
µA
nA
V
3.7
2.5
<10
35
toff
Ileak
IVcOn
IVcOff
Vcmin
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode2)
Controll Pin (Vc) Current in Sleep Mode2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
-60
Vcc - 0.3V
0V+0.3V
Vcmax
V
2)
A positive sign denotes a current flowing form the Pin to the external circuit.
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
High Frequency Products
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Edition A13, 06/00
BGC405
Power Gain
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
versus Device Current
Vcc=3V
30
50
45
dB
f=1 GHz
dB
25
40
2 GHz
Gms
35
20
30
Gma
Gms
S21
3 GHz
4 GHz
Gma
Gms
15
2
25
5 GHz
6 GHz
Gma
20
IS21I2
10
5
15
10
5
0
0
0.1
10
1
4
6
8
10
12
14
0
2
GHz
mA
f
Icc
2
S21
versus Frequency and Temperature
Vcc=3V, Icc=7mA
28
26
dB
-40°C
24
°C
22
20
2
S21
18
°C
16
14
12
10
0.2 0.6
1
1.4 1.8 2.2 2.6
3
GHz
f
High Frequency Products
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Edition A13, 06/00
BGC405
Device Current
Device Current
versus Rx and Temperature
Vcc=3V
versus Device Voltage
14
12
mA
mA
10
12
Rx=56
10
8
Icc
Icc
8
Rx=82
-40°C
6
6
Rx=120
°C
4
2
4
2
0
°C
Rx=680
0
1
2
3
4
450
650
50
250
V
Ω
Vcc
Rx
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82Ω
8
7
mA
6
5
4
Icc
3
2
1
0
3
1
2
V
VVc
High Frequency Products
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Edition A13, 06/00
BGC405
Typical Application
Vcc,4
Vr,5
C4,150pF C5,100nF
D1
D2
Rx
C3, 100pF
L1,100nH
R2 (500R)
Q2
RFout,6
R1 (47k)
R4 (2k7)
Q1
R3
10k
Rx = 82Ohm for Icc=7.2mA
Vc,8
Vb,3
C2, 1nF
RFin,1
GND,7,2
off
on
Figure 1. Typical Application and Internal Circuit
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[Ω].
Place C2 as close to the device as possible.
High Frequency Products
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Edition A13, 06/00
BGC405
Layout Proposal
9F
LQ
C7
C6
C2
L1
C3
C4
C5
Rx
9ꢀ
%*&ꢁꢂꢃꢄꢁꢅꢂ
Figure 2. Layout Proposal
Part List for Vcc=3V, ICC≈7mA
Component Value
Comment
L1
100nH
1nF
RFC
C2
Compensation Capacitor for Low Frequency Stabilization
C3
100pF
150pF
100nF
220pF
220pF
82Ω
RFC
C4
Blocking Capacitor
Blocking Capacitor
Coupling Capacitor
Coupling Capacitor
Current Adjust
Fr4,εr=4.5
C5
C6
C7
Rx
Substrate
BGC405
h=0.5mm
This proposal demonstrates how to use the BGC405 as a Self-Biased Transistor. As for a discrete Transistor
matching circuits have to be applied. A good starting point for various applications are the Application Notes
provided for the BFP405.
High Frequency Products
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Edition A13, 06/00
BGC405
SPICE Model
The following SPICE Listing describes the circuit shown in figure 3. It is valid for low frequencies. For
frequencies above 100MHz the parasitic circuit elements noted in figure 4 and table 1 should be added.
Vcc
X3
Rx
Vr
C3
2
R2
X4
3
X2
L1
RFout
R1
R4
C6
Rout
Q1
R3
Vc,4
Vb
RFin
GND
C7
C2
vin
Rin
Figure. 3: Circuit used in the SPICE File
* Preliminary SPICE Model for BGC405
.PARAM R=82
** Analysis setup **
*.TRAN 2ns 15u 0 2n
.TEMP +27 -40 +85
.DC LIN V1 0V 4V 0.1V
*.DC LIN V2 0V 3V 0.1V
*.STEP PARAM R LIST 33 47 68 100 150
* Voltage supply
V1
V2
Vcc 0
DC 3.0V
Vc
0
0
DC 0.0V
*Vpul Vc
PULSE(0 3V 100ns 0 0 9us 1000m)
High Frequency Products
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Edition A13, 06/00
BGC405
* Internal Resistors
R1
R2
R3
R4
3 Vc
47k
500
10k
TC=-0.0006,0.0000025
TC=-0.0006,0.0
Vr 2
Vb 0
TC=-0.0006,0.0000025
Vb rfin
2.7k TC=-0.0006,0.0
* External Resistors
Rx
Rout vout 0
Rin vin 0
Vcc Vr
{R}
50
50
TC=+0.000050,0.0
* External Capacitors
C2
C3
C7
C6
Vb 0
1nF
100pF
220pF
Vr 0
rfin vin
rfout vout 220pF
* Inductors (external)
L1 Vr rfout 100nH
* Transistors
Q1
X2
X3
X4
rfout rfin 0
BFP405
8PL18
2PL18
2PL18
2 3 Vb 0
Vcc 5 5 0
5 3 3 0
.PROBE
.MODEL BFP405 NPN(
+ IS = 1.9969e-16
+ VAF = 39.251
+ NE = 1.7763
+ VAR = 34.368
+ NC = 1.3152
BF = 83.23
IKF = 0.16493
BR = 10.526
IKR = 0.25052
RB = 15
RE = 1.9289
VJE = 0.70367
XTF = 0.3641
PTF = 0
MJC = 0.48652
CJS= 0
XTB = 0
FC = 0.99469)
NF = 1.0405
ISE = 1.5761e-14
NR = 0.96647
ISC = 3.7223e-17
IRB = 0.00021215
RC = 0.12691
MJE = 0.37747
VTF = 0.19762
CJC = 9.6941e-14
XCJC = 0.08161
VJS = 0.75
+ RBM = 1.3491
+ CJE = 3.7265e-15
+ TF = 4.5899e-12
+ ITF = 0.0013364
+ VJC = 0.99532
+ TR = 1.4935e-09
+ MJS = 0
EG = 1.11
+ XTI = 3
* PNP: PL18 E B C Bulk
.SUBCKT 8PL18
3
2
1
94
Q1
Q2
Q3
993
94
94
2
2
2
1
3
3
94
94
94
TL18 8
VSL18 8
LSL18 8
0.204
993
RCEX 993
.ENDS
High Frequency Products
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Edition A13, 06/00
BGC405
.SUBCKT 2PL18
3
2
1
94
Q1
Q2
Q3
993
94
94
2
2
2
1
3
3
94
94
94
TL18 2
VSL18 2
LSL18 2
0.816
993
RCEX 993
.ENDS
*****
.MODEL
+IS
TL18
PNP
NF
ISE
NC
IKF
RB
= 2.914E-17
= 1.553E+00
= 2.869E+01
= 6.000E+01
= 2.474E-05
= 4.000E+01
=-6.000E-01
= 1.200E-14
= 7.600E-10
= 1.400E-02
= 3.760E-01
= 0.000E+00
= 0.000E+00
= 1.000E+00
BF
= 4.005E+02
= 1.000E+00
= 8.190E-15
= 2.214E+00
= 0.000E+00
= 4.000E+00
= 3.000E+00
= 1.360E-01
= 1.000E+03
= 7.610E-01
= 0.000E+00
= 0.000E+00
+NE
= 6.923E-16
= 1.500E+00
= 1.676E-04
= 6.000E+01
= 2.597E+00
= 1.156E+00
= 4.900E-01
= 2.872E-01
= 4.700E-13
= 1.000E+00
= 7.500E-01
= 5.000E-01
NR
+BR
ISC
VAR
IRB
RC
+VAF
+IKR
+RBM
+XTB
+CJE
+TF
RE
EG
XTI
MJE
VTF
VJC
TR
VJE
XTF
CJC
XCJC
VJS
FC
+ITF
+MJC
+CJS
+PTF
MJS
*****
.MODEL
+IS
VSL18
PNP
NF
ISE
NC
IKF
RB
= 1.630E-19
= 1.500E+00
= 1.000E+09
= 1.000E+02
= 1.000E+00
= 0.000E+00
= 0.000E+00
= 0.000E+00
= 2.000E-09
= 1.000E+06
= 3.770E-01
= 0.000E+00
= 0.000E+00
= 1.000E+00
= 0.000E+00
= 2.000E+00
= 1.794E-04
= 0.000E+00
= 0.000E+00
= 1.122E+00
= 6.800E-01
= 0.000E+00
= 1.950E-13
= 0.000E+00
= 7.500E-01
= 5.000E-01
BF
= 1.000E+09
= 1.000E+00
= 0.000E+00
= 1.700E+00
= 0.000E+00
= 0.000E+00
= 3.000E+00
= 3.400E-01
= 1.000E+03
= 5.500E-01
= 0.000E+00
= 0.000E+00
+NE
NR
+BR
ISC
VAR
IRB
RC
+VAF
+IKR
+RBM
+XTB
+CJE
+TF
RE
EG
XTI
MJE
VTF
VJC
TR
VJE
XTF
CJC
XCJC
VJS
FC
+ITF
+MJC
+CJS
+PTF
MJS
*****
.MODEL
+IS
LSL18
PNP
NF
ISE
NC
IKF
RB
= 4.261E-17
= 1.500E+00
= 1.000E+09
= 6.000E+01
= 1.000E+00
= 0.000E+00
= 0.000E+00
= 0.000E+00
= 1.000E-09
= 1.000E+06
= 3.000E-01
= 0.000E+00
= 0.000E+00
= 1.000E+00
= 0.000E+00
= 2.000E+00
= 9.648E-05
= 0.000E+00
= 0.000E+00
= 1.158E+00
= 6.800E-01
= 0.000E+00
= 0.000E+00
= 0.000E+00
= 7.500E-01
= 5.000E-01
BF
= 1.000E+09
= 1.000E+00
= 0.000E+00
= 1.700E+00
= 0.000E+00
= 0.000E+00
= 3.000E+00
= 3.400E-01
= 1.000E+03
= 4.600E-01
= 0.000E+00
= 0.000E+00
+NE
NR
+BR
ISC
VAR
IRB
RC
+VAF
+IKR
+RBM
+XTB
+CJE
+TF
RE
EG
XTI
MJE
VTF
VJC
TR
VJE
XTF
CJC
XCJC
VJS
FC
+ITF
+MJC
+CJS
+PTF
*****
MJS
.END
High Frequency Products
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Edition A13, 06/00
BGC405
Vcc
Vr
X3
X4
Rx
C3
2
R2
3
X2
L1
RFout
R1
Lp1
Lp7
R4
Lp2
Q1
Cp1
R3
Lp6
Lp3
Cp2
Cp3
Lp5
Lp4
Vc
Vb
RFin
GND
C2
Figure 4. Parasitic circuit elements for frequencies above 100MHz
Element
Value
Lp1
Lp2
Lp3
Lp4
Lp5
Lp6
Lp7
Cp1
Cp2
Cp3
0.58nH
0.56nH
0.23nH
0.05nH
0.53nH
0.47nH
1nH
134fF
136fF
6.9fF
Table 1. Parasitic circuit elements for frequencies above 100MHz
High Frequency Products
10
Edition A13, 06/00
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