BYV96DGP [GULFSEMI]

SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:800 TO 1000V CURRENT: 1.5A; 烧结玻璃结快速开关塑封整流电压: 800至1000V电流: 1.5A
BYV96DGP
型号: BYV96DGP
厂家: GULF SEMICONDUCTOR    GULF SEMICONDUCTOR
描述:

SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:800 TO 1000V CURRENT: 1.5A
烧结玻璃结快速开关塑封整流电压: 800至1000V电流: 1.5A

二极管 开关 快速恢复二极管
文件: 总2页 (文件大小:82K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BYV96DGP THRU BYV96EGP  
SINTERED GLASS JUNCTION  
FAST SWITCHING PLASTIC RECTIFIER  
VOLTAGE:800 TO 1000V  
CURRENT: 1.5A  
DO-15\DO-204AC  
FEATURE  
High temperature metallurgically bonded construction  
Sintered glass cavity free junction  
Capability of meeting environmental standard of  
MIL-S-19500  
High temperature soldering guaranteed  
350°C/10sec/0.375”lead length at 5 lbs tension  
Operate at Ta =55°C with no thermal run away  
Typical Ir<0.1µA  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: Molded with UL-94 Class V-0 recognized Flame  
Retardant Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)  
SYMBOL  
units  
BYV96DGP  
BYV96EGP  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking Voltage  
1000  
V
(BR)R  
reverse avalanche breakdown voltage  
V
900  
1100  
(min)  
at IR = 0.1 mA  
Maximum Average Forward Rectified  
If(av)  
Ifsm  
Vf  
1.5  
35.0  
1.60  
10  
A
A
Current 3/8”lead length at Ta =65°C  
Peak Forward Surge Current 8.3ms single  
half sine-wave superimposed on rated load  
Maximum Forward Voltage at rated Forward  
V
Current and 25°C IF=3A  
non-repetitive peak reverse avalanche energy  
(Note 1)  
Ersm  
mJ  
5.0  
150  
µ
µ
A
A
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
Ta =150°C  
Ir  
Maximum Reverse Recovery Time (Note 2)  
Trr  
Cj  
300  
nS  
pF  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 3)  
(Note 4)  
45.0  
R(ja)  
Tstg, Tj  
46.0  
°C /W  
°C  
Storage and Operating Junction Temperature  
-65 to +175  
Note: 1. L = 120 mH; Tj = Tj max prior to surge; inductive load switched off  
2.Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted  
Rev.A1  
www.gulfsemi.com  
RATINGS AND CHARACTERISTIC CURVES BYV96DGP THRU BYV96EGP  
1
Rev.A1  
www.gulfsemi.com  

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