BYV96E [EIC]

AVALANCHE FAST RECOVERY RECTIFIER DIODES; 雪崩快速恢复整流二极管
BYV96E
型号: BYV96E
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

AVALANCHE FAST RECOVERY RECTIFIER DIODES
雪崩快速恢复整流二极管

整流二极管 功效 局域网 快速恢复二极管
文件: 总2页 (文件大小:22K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AVALANCHE FAST RECOVERY  
RECTIFIER DIODES  
BYV95A - BYV96E  
PRV : 200 - 1000 Volts  
Io : 1.5 Amperes  
D2  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
1.00 (25.4)  
0.161 (4.10)  
MIN.  
0.154 (3.90)  
* Low reverse current  
* Low forward voltage drop  
* Fast switching for high efficiency  
0.284 (7.21)  
0.268 (6.81)  
1.00 (25.4)  
MECHANICAL DATA :  
0.034 (0.86)  
MIN.  
* Case : D2 Molded plastic  
0.028 (0.71)  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.465 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
°
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 50 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL BYV95A BYV95B BYV95C BYV96D BYV96E UNITS  
RRM  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS voltage  
V
200  
140  
200  
300  
400  
280  
400  
500  
600  
420  
600  
700  
800  
560  
800  
900  
1000  
700  
Volts  
Volts  
Volts  
Volts  
VRMS  
VDC  
BR(min.)  
Maximum DC Blocking Voltage  
1000  
1100  
m
Min. Avalanche Breakdown Voltage @ 100 A  
V
Maximum Average Forward Rectified Current  
tp  
°
F(AV)  
Lead Length 10 mm. ; T = 65 C  
I
1.5  
Amps.  
Peak Forward Surge Current single half sine wave  
superimposed on rated load  
FSM  
I
35  
Amps.  
Volts  
Maximum Forward Voltage at IF = 3.0 Amps.  
VF  
1.6  
J
°
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
T = 25 C  
5.0  
R
I
m
A
J
°
T = 165 C  
150  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Thermal Resistance (Note 2)  
Junction Temperature Range  
Trr  
150  
200  
ns  
°
q
50  
175  
R JA  
C/W  
TJ  
°
°
C
C
Storage Temperature Range  
TSTG  
- 65 to + 175  
Notes :  
F
R
(1) Measured with I = 0.5A, I = 1.0A, Irr = 0.25A  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
UPDATE : AUGUST 3, 1998  
RATING AND CHARACTERISTIC CURVES ( BYV95A - BYV96E )  
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
50 W  
Trr  
10 W  
+0.5A  
D.U.T  
0
PULSE  
GENERATOR  
(NOTE2)  
+
- 0.25  
50 Vdc  
(approx.)  
-
OSCILLOSCOPE  
(NOTE1)  
1 W  
- 1.0A  
SET TIME BASE FOR 50/100 ns/cm  
1cm  
NOTE : 1. Rise Time = 7ns max.,Input Impedance = 1 megaohm, 22pF.  
2. Rise Time = 10ns max., Source Impedance = 50 ohms.  
3. All Resistors = Non-inductive Types.  
FIG.2 - FORWARD CURRENT DERATING CURVE  
FIG.3 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
50  
1.5  
1.2  
40  
30  
20  
0.9  
0.6  
0.3  
0
10  
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10  
20  
40 60 100  
NUMBER OF CYCLES AT 50Hz  
TIE-POINT TEMPERATURE, ( °C)  
FIG.4 - TYPICAL FORWARD CHARACTERISTICS  
FIG.5 - TYPICAL REVERSE CHARACTERISTICS  
10  
10  
TJ = 125 °C  
TJ = 100 °C  
TJ = 25 °C  
1.0  
1.0  
0.1  
0.1  
0.1  
TJ = 25 °C  
Pulse Width = 300 ms  
2% Duty Cycle  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
20  
40  
60  
80  
100  
120  
140  
FORWARD VOLTAGE, VOLTS  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  

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