SSF2120GA [GOOD-ARK]

Small Signal Field-Effect Transistor, 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,;


型号：	SSF2120GA
厂家：	GOOD-ARK ELECTRONICS
描述：	Small Signal Field-Effect Transistor, 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 开关光电二极管晶体管
文件：	总8页 (文件大小：1090K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSF2120GA

20V N-Channel and P-Channel Complementary MOSFET

Main Product Characteristics

n-ch

20V

p-ch

-20V

V_DSS

R_DSon(typ.) 300mohm 600mohm

I_D800mA -400mA

Schematic Diagram

SOT- 563

Features and Benefits

AdvancedProcessTechnology

Ideal for PWM, load switching and general

purposeapplications

Ultralowon-resistancewithlowgatecharge

Fastswitchingandreversebodyrecovery

150°C operating temperature

Description

The SSF2120GA utilizes the latest trench processing techniques to achieve high cell density, low

on-resistance and high repetitive avalanche rating. These features make this device extremely

efficient and reliable for use in power switching applications and a wide variety of other applications.

Absolute Max Rating

Max.

Symbol

Parameter

Units

N-Channel

P-Channel

-0.4

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 4.5V①

Pulsed Drain Current②

0.8

0.51

-0.26

3.2

-1.6

P_D@T_C= 25°C

V_DS

Power Dissipation③

312

Drain-Source Voltage

-20

V_GS

Gate-to-Source Voltage

± 8

T_JT_STG

Operating Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Max.

Symbol

Characteristics

Typ.

Units

N-channel

P-channel

°C/W

R_θJA

—

400

Junction-to-Ambient (t ≤ 10s)④

1/8

SSF2120GA

20V N-Channel and P-Channel Complementary MOSFET

N-Channel Electrical Characteristics (T_A=25°C unless otherwise specified)

Parameter

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Symbol

Condition

Min Typ Max

Unit

BV_DSS

△BV_DSS/△

T_J

V_GS=0V I_D=250μA

Reference to 25℃ ,

ID=1mA

BV_DSSTemperature Coefficient

-0.01

V/℃

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

I_DSS

V_DS=20V,V_GS=0V

μA

I_GSS

V_GS=±6V,V_DS=0V

±20

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V_GS(th)

V_DS=V_GS,I_D=250μA

0.3

0.6

1.0

VGS(th) Temperature Coefficient

△V^GS(th)

V_DS=V_GS,I_D=250μA

mV/℃

V_GS=4.5V, I_D=0.5A

V_GS=2.5V, I_D=0.4A

V_GS=1.8V, I_D=0.2A

V_GS=1.5V, I_D=0.1A

V_GS=1.2V, I_D=0.1A

200

235

295

365

600

300

400

Drain-Source On-State Resistance

R_DS(ON)

500

mΩ

800

1500

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C_lss

C_oss

C_rss

38.2

14.4

V_DS=10V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

3.5

Turn-on Rise Time

V_DD=10V,I_D=0.5A

V_GS=4.5V,R_GEN=10Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

_DS=10V,I_D=0.5A,

_GS=4.5V

Gate-Source Charge

0.26

0.2

0.5

0.4

Gate-Drain Charge

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V_SD

I_S

V_GS=0V,I_S=0.2A

0.8

1.0

V^G=VD=0V , Force

Current

Diode Forward Current (Note 2)

Diode Pulsed Current (Note 2)

800

V^G=VD=0V , Force

Current

I_SM

1.6

2/8

SSF2120GA

20V N-Channel and P-Channel Complementary MOSFET

P-Channel Electrical Characteristics (T_A=25°C unless otherwise specified)

Parameter

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Symbol

Condition

Min Typ Max

Unit

BV_DSS

△BV_DSS/△

T_J

V_GS=0V I_D=250μA

Reference to 25℃,

ID= -1mA

-20

BV_DSSTemperature Coefficient

-0.01

V/℃

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

I_DSS

V_DS= -20V,V_GS=0V

-1

μA

I_GSS

V_GS=±6V,V_DS=0V

±20

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V_GS(th)

V_DS=V_GS,I_D= -250μA

-0.3

-0.6

-1.0

mV/

℃

VGS(th) Temperature Coefficient

△V^GS(th)

V_DS=V_GS,I_D= -250μA

600

850

_GS= -4.5V, I_D= -0.3A

440

610

V_GS= -2.5V, I_D= -0.2A

V_GS= -1.8V, I_D= -0.1A

V_GS= -1.5V, I_D= -0.1A

V_GS= -1.2V, I_D= -0.1A

810

1200

1600

3000

Drain-Source On-State Resistance

R_DS(ON)

mΩ

1020

1800

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C_lss

C_oss

C_rss

V_DS= -10V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

6.5

t_d(on)

t_r

t_d(off)

t_f

5.2

Turn-on Rise Time

V_DD= -10V,I_D= 0.2A

_GS= -4.5V,R_GEN=10Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

V_DS= -10V,I_D= -0.2A,

Gate-Source Charge

0.28

0.18

0.5

0.4

V_GS= -4.5V

Gate-Drain Charge

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V_SD

I_S

V_GS=0V,I_S= -0.2A

V^G=VD=0V , Force

Current

-0.8

-1.0

Diode Forward Current (Note 2)

Diode Pulsed Current (Note 2)

-400

V^G=VD=0V , Force

Current

I_SM

-800

3/8

SSF2120GA

20V N-Channel and P-Channel Complementary MOSFET

N-Channel Typical Electrical and Thermal Characteristics

Figure 1: Drain Current vs. Tc

Figure 2: Normalized RDSon vs. TJ

Figure 4： Gate Charge Waveform

Figure 3: Normalized Vth vs. TJ

Figure 5 : Normalized Transient Response

Figure 6: Safe Operation Area

4/8

SSF2120GA

20V N-Channel and P-Channel Complementary MOSFET

P-Channel Typical Electrical and Thermal Characteristics

Figure 1: Drain Current vs. Tc

Figure 2: Normalized RDSon vs. TJ

Figure 3: Normalized Vth vs. TJ

Figure 4： Gate Charge Waveform

Figure 5 : Normalized Transient Response

Figure 6: Safe Operation Area

5/8

SSF2120GA

20V N-Channel and P-Channel Complementary MOSFET

Test Circuits and Waveforms

Switch Waveforms:

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

6/8

SSF2120GA

20V N-Channel and P-Channel Complementary MOSFET

Mechanical Data

Millimeters

SYMBOL

MIN

0.90

MAX

1.10

0.10

0.30

0.08

2.70

2.60

1.40

0.50

0.20

3.10

3.00

1.80

0.95 BSC

0.35

0.55

Notes：

① Dimensions are inclusive of plating

② Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be

less than 6 mils

③ Dimension L is measured in gauge plane.

④ Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

7/8

SSF2120GA

20V N-Channel and P-Channel Complementary MOSFET

Ordering and Marking Information

Device Marking: 2120

Package (Available)

SOT-563

Operating Temperature Range

C : -55 to 150 ºC

Devices per Unit

Package Units/

Tubes/

Inner Box

3000pcs 10pcs

Units/

Inner Boxes/

Units/

Carton Box

120000pcs

Type

Tube

Inner Box Carton Box

30000pcs

SOT-563

4pcs

Reliability Test Program

Test Item

High

Conditions

T_j=125℃ or 150℃ @

Duration Sample Size

168 hours

500 hours

1000 hours

3 lots x 77 devices

Temperature

Reverse

80% of Max

V_DSS/V_CES/VR

Bias(HTRB)

High

T_j=125℃ or 150℃ @

168 hours

500 hours

1000 hours

3 lots x 77 devices

Temperature

Gate

100% of Max V_GSS

Bias(HTGB)

www.goodarksemi.com

Doc.USSSF2120GAx2.0

8/8

SSF2120GA [GOOD-ARK]

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