SSF2112H2_15 [GOOD-ARK]
20V Dual N-Channel MOSFET;
| 型号： | SSF2112H2_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 20V Dual N-Channel MOSFET |
| 文件： | 总7页 (文件大小：811K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF2112H2
20V Dual N-Channel MOSFET
Main Product Characteristics
VDSS 20V
RDS(on) 10mohm(typ.)
ID 8A
D1
D2
D1
S1
S1
G1
D2
S2
S2
G2
G1
G2
2112H2
S1
S2
MarkingandPin
Assignment
SchematicDiagram
TSSOP-8
Features and Benefits
AdvancedtrenchMOSFETprocess technology
Special designed for buttery protection, load
switching andgeneralpower management
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
150℃operating temperature
Leadfreeproduct
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and awide variety of other
applications.
Absolute Max Rating
Parameter
Symbol
VDS
Limit
Unit
V
Drain-Source Voltage
Gate-Source Voltage
20
±10
V
VGS
8
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
50
A
IDM
Maximum Power Dissipation
1.25
-55 To 150
W
℃
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
℃/W
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Page 1 of 7
Rev.1.0
SSF2112H2
20V Dual N-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Parameter
Symbol
Condition
Min Typ Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
20
V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=4.5A
VGS=2.5V, ID=3.5A
VDS=5V,ID=4A
0.5
4
0.7
10
1.2
V
mΩ
mΩ
S
12.5
18.5
Drain-Source On-State Resistance
13.2
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
1520
229
PF
PF
PF
VDS=8V,VGS=0V,
F=800KHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
198
td(on)
tr
td(off)
tf
18.3
4.8
43.5
20
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=10V,ID=1A
VGS=4V,RGEN=10Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
19
VDS=10V,ID=4A,
Gate-Source Charge
4.2
4.9
VGS=4V
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
IS
VGS=0V,IS=2A
0.67
1.2
8
V
A
Diode Forward Current (Note 2)
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Page 2 of 7
Rev.1.0
SSF2112H2
20V Dual N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 3 of 7
Rev.1.0
SSF2112H2
20V Dual N-Channel MOSFET
Typical Electrical and Thermal Characteristics
TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 1: Transfer Characteristics
Figure 2： Drain-Source On-Resistance
TJ-Junction Temperature(℃)
Vsd Source-Drain Voltage (V)
Figure 4: Power Dissipation
Figure 3 : Source- Drain Diode Forward
Figure 5: Safe Operation Area
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Page 4 of 7
Rev.1.0
SSF2112H2
20V Dual N-Channel MOSFET
Square Wave Pulse Duration(sec)
Figure 6: Normalized Maximum Transient Thermal Impedance
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Page 5 of 7
Rev.1.0
SSF2112H2
20V Dual N-Channel MOSFET
Mechanical Data
TSSOP-8 Dimensions in Millimeters (UNIT: mm)
NOTES：
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 6 of 7
Rev.1.0
SSF2112H2
20V Dual N-Channel MOSFET
Ordering and Marking Information
Device Marking: 2112H2
Package (Available)
TSSOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/
Tubes/
Inner Box
Units/
Inner Boxes/
Units/
Carton Box
48000pcs
Type
Tube
Inner Box Carton Box
6000pcs
TSSOP-8 3000pcs 2pcs
8pcs
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ or 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=125℃ or 150℃ @ 168 hours
3 lots x 77 devices
Temperature
Gate
100% of Max VGSS
500 hours
1000 hours
Bias(HTGB)
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Page 7 of 7
Rev.1.0
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