GC05MPS12-220 [GENESIC]
Silicon Carbide Schottky Diode;
| 型号： | GC05MPS12-220 |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Carbide Schottky Diode |
| 文件： | 总7页 (文件大小：481K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GCꢀꢁMPSꢂꢁ-ꢁꢁꢀ
ꢀꢁꢂꢂ V SiC MPS™ Diode
VRRM
IF (Tc
=
=
=
1200 V
6 A
Silicon Carbide Schottky Diode
=
135°C)
QC
8 nC
Features
Package
• High Avalanche (UIS) Capability
• Enhanced Surge Current Capability
• Superior Figure of Merit QC/IF
Case
2
• Low Thermal Resistance
• 175 °C Maximum Operating Temperature
• Temperature Independent Switching Behavior
• Positive Temperature Coefficient of VF
1
TO-220-2L
•
Extremely Fast Switching Speeds
Advantages
Applications
• Low Standby Power Losses
• Improved Circuit Efficiency (Lower Overall Cost)
• Low Switching Losses
• Ease of Paralleling without Thermal Runaway
• Smaller Heat Sink Requirements
• Low Reverse Recovery Current
• Low Device Capacitance
• Boost Diode in Power Factor Correction (PFC)
• Switched Mode Power Supplies (SMPS)
• AC-DC Converters & DC-DC Converters
• Freewheeling / Anti-parallel Diode in Inverters
• Solar Micro-inverters
• LED and HID Lighting
• Medical Imaging Systems
• Low Reverse Leakage Current
• High Voltage Sensing
Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated)
Parameter
Symbol
Conditions
Values
Unit
Repetitive Peak Reverse Voltage
VRRM
1200
12
6
V
TC = 25 °C, D = 1
TC = 135 °C, D = 1
Continuous Forward Current
IF
A
A
TC = 169 °C, D = 1
2
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
18
15
14
8
Non-Repetitive Peak Forward Surge
Current, Half Sine Wave
IF,SM
Repetitive Peak Forward Surge Current,
Half Sine Wave
IF,RM
A
A
Non-Repetitive Peak Forward Surge
Current
IF,max
TC = 25 °C, tP = 10 µs
200
i2t Value
∫i2 dt
EAS
TC = 25 °C, tP = 10 ms
L = 15 mH, IAS = 2 A
VR = 0 ~ 960 V
1.7
30
A2s
mJ
V/ns
W
Non-Repetitive Avalanche Energy
Diode Ruggedness
dV/dt
Ptot
100
Power Dissipation
TC = 25 °C
101
Operating and Storage Temperature
Tj , Tstg
-55 to 175
°C
Aug 2018 Rev1.2
www.genesicsemi.com/schottky_mps/GC02MPS12-220.pdf
Page 1 of 7
GCꢀꢁMPSꢂꢁ-ꢁꢁꢀ
ꢀꢁꢂꢂ V SiC MPS™ Diode
Electrical Characteristics
Parameter
Values
Symbol
Conditions
Unit
V
Min.
Typ.
1.5
2
Max.
1.8
2.4
2
IF = 2 A, Tj = 25 °C
IF = 2 A, Tj = 175 °C
Diode Forward Voltage
Reverse Current
VF
IR
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
0.2
0.6
5
µA
nC
ns
7.2
VR = 400 V
Total Capacitive Charge
Switching Time
QC
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 175 °C
VR = 800 V
VR = 400 V
VR = 800 V
8
ts
< 10
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 800 V, f = 1 MHz, Tj = 25 °C
127
10
Total Capacitance
C
pF
Thermal / Mechanical Characteristics
Thermal Resistance, Junction - Case
Weight
RthJC
WT
1.4
2
°C/W
g
Mounting Torque
TM
0.8
Nm
Aug 2018 Rev1.2
www.genesicsemi.com/schottky_mps/GC02MPS12-220.pdf
Page 2 of 7
GCꢀꢁMPSꢂꢁ-ꢁꢁꢀ
ꢀꢁꢂꢂ V SiC MPS™ Diode
IF = f(VF,Tj); tP = 10 µs
IF = f(VF,Tj); tP = 10 µs
Figure 2: Typical High Current Forward
Characteristics
Figure 1: Typical Forward Characteristics
Ptot = f(TC)
IR = f(VR,Tj)
Figure 3: Typical Reverse Characteristics
Figure 4: Power Derating Curve
Aug 2018 Rev1.2
www.genesicsemi.com/schottky_mps/GC02MPS12-220.pdf
Page 3 of 7
GCꢀꢁMPSꢂꢁ-ꢁꢁꢀ
ꢀꢁꢂꢂ V SiC MPS™ Diode
IF = f(TC); D = tP/T, tP= 10 µs
C = f(VR); Tj = 25 °C; f = 1 MHz
Figure 6: Typical Junction Capacitance vs
Reverse Voltage Characteristics
Figure 5: Current Derating Curve
Qc = f(VR); Tj = 25 °C; f = 1 MHz
EC = f(VR); Tj = 25 °C; f = 1 MHz
Figure 7: Typical Capacitive Charge vs Reverse
Voltage Characteristics
Figure 8: Typical Capacitive Energy vs Reverse
Voltage Characteristics
Aug 2018 Rev1.2
www.genesicsemi.com/schottky_mps/GC02MPS12-220.pdf
Page 4 of 7
GCꢀꢁMPSꢂꢁ-ꢁꢁꢀ
ꢀꢁꢂꢂ V SiC MPS™ Diode
Zth,jc = f(tP,D); D = tP/T
Figure 9: Transient Thermal Impdance
IF = (VF – VBI)/RDIFF (A)
Built-In Voltage (VBI):
VBI(Tj) = m*Tj + n (V)
m = -1.49e-03, n = 1.01
Differential Resistance (RDIFF):
RDIFF(Tj) = a*Tj2 + b*Tj + c (Ω);
a = 6.33e-06, b = 1.06e-03, c = 0.224
IF = f(VF, Tj)
Figure 10: Forward Curve Model
Aug 2018 Rev1.2
www.genesicsemi.com/schottky_mps/GC02MPS12-220.pdf
Page 5 of 7
GCꢀꢁMPSꢂꢁ-ꢁꢁꢀ
ꢀꢁꢂꢂ V SiC MPS™ Diode
Package Dimensions
TO-220-2L
Package Outline
Recommended Solder Pad Layout
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Aug 2018 Rev1.2
www.genesicsemi.com/schottky_mps/GC02MPS12-220.pdf
Page 6 of 7
GCꢀꢁMPSꢂꢁ-ꢁꢁꢀ
ꢀꢁꢂꢂ V SiC MPS™ Diode
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also
referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in
accordance with EU Directive 2011/65/EC (RoHS), as implemented November 15, 2017. RoHS Declarations for
this product can be obtained from your GeneSiC representative.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European
Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the
foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACh SVHC
Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license,
express or implied to any intellectual property rights is granted by this document.
Related Links
•
•
•
Soldering Document: http://www.genesicsemi.com/quality/quality-manual/
Tin-whisker Report: http://www.genesicsemi.com/quality/compliance/
Reliability Report: http://www.genesicsemi.com/quality/reliability/
Published by
Copyright © 2018 GeneSiC Semiconductor Inc. All Rights Reserved
The information in this document is subject to change without notice
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
Aug 2018 Rev1.2
Page 7 of 7
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