GC05MPS12-252_V01 [GENESIC]
Silicon Carbide Schottky Diode;
| 型号： | GC05MPS12-252_V01 |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Carbide Schottky Diode |
| 文件： | 总7页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GC05MPS12-252
1200V 5A SiC Schottky MPS™ Diode
VRRM
IF (Tc
=
=
=
1200 V
13 A
Silicon Carbide Schottky Diode
=
135°C)
QC
12 nC
Features
Package
Case
• High Avalanche (UIS) Capability
• Enhanced Surge Current Capability
• Superior Figure of Merit QC/IF
Case
K
A
• Low Thermal Resistance
• 175 °C Maximum Operating Temperature
• Temperature Independent Switching Behavior
• Positive Temperature Coefficient of VF
K
TO-252-2
A
•
Extremely Fast Switching Speeds
Advantages
Applications
• Low Standby Power Losses
• Improved Circuit Efficiency (Lower Overall Cost)
• Low Switching Losses
• Boost Diode in Power Factor Correction (PFC)
• Switched Mode Power Supply (SMPS)
• Uninterruptible Power Supply (UPS)
• Motor Drives
• Ease of Paralleling without Thermal Runaway
• Smaller Heat Sink Requirements
• Low Reverse Recovery Current
• Low Device Capacitance
• Freewheeling / Anti-parallel Diode in Inverters
• Solar Inverters & Wind Energy Converters
• Electric Vehicles (EV) & DC Fast Charging
•
Low Reverse Leakage Current
• Induction Heating & Welding
Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated)
Parameter
Symbol
Conditions
Values
1200
26
Unit
Repetitive Peak Reverse Voltage
VRRM
V
TC = 25 °C, D = 1
TC = 135 °C, D = 1
Continuous Forward Current
IF
13
A
A
TC = 166 °C, D = 1
5
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
40
Non-Repetitive Peak Forward Surge
Current, Half Sine Wave
IF,SM
32
24
Repetitive Peak Forward Surge Current,
Half Sine Wave
IF,RM
A
A
17
Non-Repetitive Peak Forward Surge
Current
i2t Value
IF,max
TC = 25 °C, tP = 10 µs
200
∫i2 dt
EAS
TC = 25 °C, tP = 10 ms
L = 6.8 mH, IAS = 5 A
VR = 0 ~ 960 V
8
84
A2s
mJ
V/ns
W
Non-Repetitive Avalanche Energy
Diode Ruggedness
dV/dt
Ptot
200
Power Dissipation
TC = 25 °C
179
Operating and Storage Temperature
Tj , Tstg
-55 to 175
°C
April 2019 Rev1.3
www.genesicsemi.com/schottky_mps/GC05MPS12-252.pdf
Page 1 of 7
GC05MPS12-252
1200V 5A SiC Schottky MPS™ Diode
Electrical Characteristics
Parameter
Values
Symbol
Conditions
Unit
V
Min.
Typ.
1.5
2
Max.
1.8
2.4
3
IF = 5 A, Tj = 25 °C
IF = 5 A, Tj = 175 °C
Diode Forward Voltage
Reverse Current
VF
IR
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
0.6
6
µA
nC
ns
30
VR = 400 V
9
Total Capacitive Charge
Switching Time
QC
ts
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 175 °C
VR = 800 V
VR = 400 V
VR = 800 V
12
< 10
VR = 1 V, f = 1 MHz
VR = 800 V, f = 1 MHz
281
18
Total Capacitance
C
pF
Thermal / Mechanical Characteristics
Thermal Resistance, Junction - Case
Weight
RthJC
WT
0.84
0.3
°C/W
g
April 2019 Rev1.3
www.genesicsemi.com/schottky_mps/GC05MPS12-252.pdf
Page 2 of 7
GC05MPS12-252
1200V 5A SiC Schottky MPS™ Diode
10
50
40
30
20
10
0
oC
oC
oC
oC
oC
175
175
150
125
75
oC
oC
oC
oC
150
125
75
8
6
4
2
0
oC
25
25
0
1
2
3
4
0
2
4
6
8
10
(V)
(V)
Forward Voltage, VF
Forward Voltage, VF
IF = f(VF,Tj); tP = 250 µs
Figure 1: Typical Forward Characteristics
IF = f(VF,Tj); tP = 250 µs
Figure 2: Typical High Current Forward
Characteristics
180
oC
175
150
125
75
25
oC
oC
10−6
10−7
10−8
10−9
10−10
oC
oC
120
60
0
25
50
75 100 125 150 175
200 400 600 800 1000 1200
o
(
(V)
Case Temperature, TC C)
Reverse Voltage, VR
IR = f(VR,Tj)
Ptot = f(TC); Tj = 175 °C
Figure 3: Typical Reverse Characteristics
Figure 4: Power Derating Curve
April 2019 Rev1.3
www.genesicsemi.com/schottky_mps/GC05MPS12-252.pdf
Page 3 of 7
GC05MPS12-252
1200V 5A SiC Schottky MPS™ Diode
90
360
240
120
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
60
30
0
0.1
1
10
100
(V)
1000
25
50
75 100 125 150 175
o
Reverse Voltage, VR
(
Case Temperature, TC C)
IF = f(TC); D = tP/T; Tj = 175 °C
C = f(VR); f = 1 MHz
Figure 6: Typical Junction Capacitance vs
Reverse Voltage Characteristics
Figure 5: Current Derating Curves
16
12
8
10
8
6
4
4
2
0
0
0
300
600
900
1200
0
300
600
900
1200
(V)
Reverse Voltage, VR
(V)
Reverse Voltage, VR
Qc = f(VR); f = 1 MHz
EC = f(VR); f = 1 MHz
Figure 7: Typical Capacitive Charge vs Reverse
Voltage Characteristics
Figure 8: Typical Capacitive Energy vs Reverse
Voltage Characteristics
April 2019 Rev1.3
www.genesicsemi.com/schottky_mps/GC05MPS12-252.pdf
Page 4 of 7
GC05MPS12-252
1200V 5A SiC Schottky MPS™ Diode
Zth,jc = f(tP,D); D = tP/T
Figure 9: Transient Thermal Imedance
IF = (VF – VBI)/RDIFF (A)
Built-In Voltage (VBI):
VBI(Tj) = m*Tj + n (V),
m = -1.40e-03, n = 1.02
Differential Resistance (RDIFF):
RDIFF(Tj) = a*Tj2 + b*Tj + c (Ω);
a = 2.36e-06, b = 4.33e-04, c = 0.0873
IF = f(VF, Tj)
Figure 10: Forward Curve Model
April 2019 Rev1.3
www.genesicsemi.com/schottky_mps/GC05MPS12-252.pdf
Page 5 of 7
GC05MPS12-252
1200V 5A SiC Schottky MPS™ Diode
Package Dimensions
TO-252-2
Package Outline
Recommended Solder Pad Layout
0.236 (6.00)
0.256 (6.50)
0.246 (6.25)
0.118 (3.00)
0.055 (1.40)
0.090 (2.29)
0.055 (1.40)
0.090 (2.29)
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
April 2019 Rev1.3
www.genesicsemi.com/schottky_mps/GC05MPS12-252.pdf
Page 6 of 7
GC05MPS12-252
1200V 5A SiC Schottky MPS™ Diode
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also
referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in
accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and
amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from
your GeneSiC representative.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European
Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the
foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACh SVHC
Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license,
express or implied to any intellectual property rights is granted by this document.
Related Links
•
•
•
•
•
SPICE Models: https://www.genesicsemi.com/schottky-mps
Evaluation Boards: https://www.genesicsemi.com/technical-support
Quality Manual: https://www.genesicsemi.com/technical-support/quality-manual
Compliance: https://www.genesicsemi.com/technical-support/compliance
Reliability Report: https://www.genesicsemi.com/technical-support/reliability
www.genesicsemi.com/schottky-mps
Published by
Copyright © 2019 GeneSiC Semiconductor Inc. All Rights Reserved
The information in this document is subject to change without notice
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
April 2019 Rev1.3
Page 7 of 7
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