7MBR15UF060 [FUJI]
Power Integrated Module; 功率集成模块
| 型号： | 7MBR15UF060 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Power Integrated Module |
| 文件： | 总16页 (文件大小：1007K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPECIFICATION
Power Integrated Module
Device Name
:
7MBR15UF060
MS6M00814
Type Name
Spec. No.
:
:
N A M E
A P P R O V E D
D A T E
Fuji Electric Device Technology Co.,Ltd.
D R A W N
CHECKED
CHECKED
Dec.-10- '04 K. Komatsu
Y. Seki
Dec.-10- '04 O. Ikawa
K. Yamada
MS6M00814
1/16
H04-004-07b
Revised Records
Classi-
fication
Applied
date
Date
Ind.
Content
Drawn
Checked Checked Approved
Issued
date
Enactment
Dec.-10-'04
O. Ikawa K. Yamada Y. Seki
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
2/16
7MBR15UF060 Specification
1. Outline Drawing ( Unit : mm )
Module only designed for mounting on PCB with
±
1.7 0.3mm
thickness
2. Equivalent circuit
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
3/16
3. Pin positions with tolerance ( Unit : mm )
4. Drilling layout for PCB
Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product.
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
4/16
Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified)
5.
Maximum
Ratings
600
Items
Symbols
Conditions
Units
Collector-Emitter voltage
VCES
VGES
Ic
V
V
Gate-Emitter voltage
Collector current
±20
15
Continuous
1ms
Tc=60
℃
Tc=25oC
A
A
18
Icp
Tc=60
30
℃
Tc=25oC
36
-Ic
Pc
Continuous
1 device
Tc=60
15
A
W
V
℃
Collector Power Dissipation
Collector-Emitter voltage
Gate-Emitter voltage
63
VCES
VGES
Ic
600
±20
10
V
Continuous
1ms
Tc=80
℃
A
A
Tc=25oC
Tc=80
14
Collector current
Icp
20
℃
Tc=25oC
28
Collector Power Dissipation
Average Output Current
Pc
Io
1 device
56
W
A
50Hz/60Hz
sine wave
20
Tj=150oC,10ms
Surge Current (Non-Repetitive)
IFSM
I2t
210
221
A
A2s
oC
oC
V
I2t
(Non-Repetitive)
half sine wave
Junction temperature
Storage temperature
Isolation
Tj
150
Tstg
Viso
-40~ +125
2500
between terminal and baseplate(*1)
AC : 1min.
M4
(*2)
voltage
2500
V
between thermistor and others
Mounting Screw Torque
1.3 1.7
～
N.m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Terminal T1 and T2 should be connected together. And another terminals
should be connected together and shorted to baseplate.
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
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Electrical characteristics ( at Tj= 25oC unless otherwise specified)
6.
Characteristics
Items
Zero gate voltage
Collector current
Symbols
Conditions
0 V, V
min.
typ.
Max. Units
I
V
=
= 600 V
CE
-
-
-
1.0
200
7.5
mA
nA
V
CES
IGES
VGE(th) VCE =
GE
Gate-Emitter leakage current
VCE =
0 V, VGE = 20 V
-
±
Gate-Emitter
threshold voltage
20 V, Ic =
Tj=25
8 mA
4.5
6.0
-
-
-
-
2.10
2.50
2.00
2.40
2.60
3.00
2.50
2.90
℃
V
CE(sat)
(Terminal)
VCE(sat)
(Chip)
Collector-Emitter
saturation voltage
V
=
15 V Tj=125
GE
℃
V
Ic =
15 A Tj=25
℃
Tj=125
℃
Input capacitance
Turn-on time
Cies
VGE =
f =
0 V, VCE = 10 V
1 MHz
-
900
-
pF
ton
Vcc=
300 V
-
-
-
-
-
-
-
-
-
-
0.43
0.18
0.03
0.40
0.05
1.85
1.95
1.75
1.85
-
1.20
0.60
-
tr
tr(i)
Ic =
15 A
VGE =
±15 V
s
toff
R
G
=
270
1.00
0.35
2.50
2.60
2.40
2.50
300
Turn-off time
tf
Forward on voltage
VF
Tj=25
℃
(Terminal)
VF
Tj=125
℃
IF =
15A
V
Tj=25
℃
(Chip)
trr
Tj=125
℃
Reverse recovery time
IF =
VGE =
15 A
ns
mA
nA
V
Zero gate voltage
Collector current
ICES
0 V, VCE = 600 V
0 V, V 20 V
-
-
-
-
1.0
200
7.5
Gate-Emitter leakage current
I
V
V
=
=
=
GE
±
GES
CE
CE
Gate-Emitter
threshold voltage
V
20 V, Ic =
Tj=25
4 mA
4.5
6.0
GE(th)
Collector-Emitter
-
-
-
-
2.45
2.95
2.40
2.90
3.00
3.45
2.95
3.40
℃
VCE(sat)
(Terminal)
VCE(sat)
(Chip)
VGE =
Ic =
15 V Tj=125
℃
V
10 A Tj=25
℃
saturation voltage
Input capacitance
Tj=125
℃
Cies
V
=
0 V, V
1 MHz
=
10 V
-
600
-
GE
CE
pF
f =
ton
tr
Vcc=
Ic =
300 V
-
-
-
-
0.60
0.30
0.45
0.05
-
1.20
0.60
1.00
0.35
350
1.00
-
Turn-on time
Turn-off time
10 A
s
toff
tf
V
=
±15 V
GE
RG =
IF =
510
Reverse recovery time
Reverse current
trr
10 A
ns
-
-
-
-
I
V
=
R
600 V
-
mA
RRM
Forward on voltage
VFM
chip
1.1
1.2
-
IF =
20A
V
mA
Ω
K
terminal
1.5
Reverse current
Resistance
I
V
=
800 V
1.0
RRM
R
-
T = 25oC
T =100oC
T = 25/50oC
4750 5000 5250
495
3305 3375 3450
R
-
-
B value
B
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
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7. Thermal resistance characteristics
Items
Characteristics
Symbols
Conditions
Inverter IGBT
Inverter FWD
min.
typ.
Max. Units
-
-
-
-
-
-
-
1.99
2.04
2.25
2.04
1.56
-
Thermal resistance
(1 device)
-
oC/W
oC/W
Rth(j-c) Brake IGBT
Brake diode
-
-
-
Converter Diode
Rth(c-f)
(*)
Contact Thermal resistance
0.50
with Thermal Compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
8. Indication on module
Serial No.
□
□
7MBR15UF060
15A 600V
□
□□□□□
U. K.
Lot. No.
9. Applicable category
This specification is applied to Power Integrated Module named 7MBR15UF060.
10. Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35oC and
humidity of 45 to 75% .
・
・
Store modules in a place with few temperature changes in order to avoid
condensation on the module surface.
Avoid exposure to corrosive gases and dust.
・
・
・
・
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
Do not drop or otherwise shock the modules when transporting.
11. Definitions of switching time
90%
0V
0V
V
GE
t
rr
L
I
rr
V
CE
Ic
90%
90%
Vcc
10%
10%
10%
VCE
Ic
0V
0A
R
G
VCE
t
r(i)
t
f
V
GE
Ic
t
r
t
off
t
on
12. Packing and Labeling
Display on the packing box
Logo of production
Type name
‐
‐
‐
‐
Lot. No.
Products quantitiy in a packing box
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
7/16
Reliability Test Items
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Test
cate-
gories
Accept-
ance
number
Number
of sample
Test items
Test methods and conditions
Test Method 401
1 Terminal Strength
(Pull test)
Pull force
: 10N
5
5
( 0 : 1 )
( 0 : 1 )
Method
Ⅰ
Test time
: 10±1 sec.
: 1.3 ~ 1.7 N･m (M4)
: 10±1 sec.
Test Method 402
method
2 Mounting Strength
Screw torque
Test time
Ⅱ
Test Method 403
Reference 1
3 Vibration
4 Shock
Range of frequency : 0.1 ~ 500Hz
5
5
( 0 : 1 )
Sweeping time
Acceleration
: 15 min.
100m/s2
Condition code B
:
Sweeping direction : Each X,Y,Z axis
Test time
: 3 hr. (1hr./direction)
9800m/s2
Test Method 404
Condition code D
Maximum acceleration
Pulse width
:
( 0 : 1 )
: 0.5msec.
Direction
: Each X,Y,Z axis
: 3 times/direction
: 125±5 ℃
Test time
Test Method 201
Test Method 202
1 High Temperature
Storage
Storage temp.
Test duration
Storage temp.
Test duration
Storage temp.
Relative humidity
Test duration
5
5
5
( 0 : 1 )
( 0 : 1 )
( 0 : 1 )
: 1000hr.
2 Low Temperature
Storage
: -40±5 ℃
: 1000hr.
Test Method 103
Test code C
3 Temperature
Humidity
: 85±2
℃
: 85±5%
: 1000hr.
Storage
Test Method 105
4 Temperature
Cycle
5
( 0 : 1 )
Test temp.
:
Low temp. -40±5 ℃
High temp. 125 ±5 ℃
RT 5 ~ 35 ℃
Dwell time
: High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
: 100 cycles
Number of cycles
Test temp.
Test Method 307
method
5 Thermal Shock
5
( 0 : 1 )
+0
High temp. 100 -5
Ⅰ
:
℃
Condition code A
+5
Low temp. 0 -0
Used liquid : Water with ice and boiling water
℃
Dipping time
: 5 min. par each temp.
: 10 sec.
Transfer time
Number of cycles
: 10 cycles
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
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Reliability Test Items
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Test
cate-
gories
Accept-
ance
number
Number
of sample
Test items
Test methods and conditions
Test Method 101
Test Method 101
Test Method 106
1 High temperature
Reverse Bias
5
5
5
( 0 : 1 )
( 0 : 1 )
P<1%
Test temp.
:
Ta = 125±5 ℃
(Tj ≦ 150 ℃)
Bias Voltage
Bias Method
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
Test duration
Test temp.
: 1000hr.
2 High temperature
Bias (for gate)
:
Ta = 125±5 ℃
(Tj ≦ 150 ℃)
Bias Voltage
Bias Method
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
Test duration
ON time
OFF time
Test temp.
: 1000hr.
: 2 sec.
: 18 sec.
:
3 Intermitted
Operating Life
(Power cycle)
( for IGBT )
Tj=100±5 deg
Tj ≦150 ℃, Ta=25±5 ℃
Number of cycles
: 8500 cycles
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Lower limit Upper limit
Unit
Note
Electrical
Leakage current
ICES
-
-
USL×2
USL×2
mA
characteristic
±IGES
A
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage
Forward voltage
VCE(sat)
VF
VGE
or VCE
VF
-
-
-
USL×1.2
USL×1.2
USL×1.2 mV
V
V
Thermal
IGBT
resistance
FWD
-
USL×1.2 mV
Isolation voltage
Visual inspection
Peeling
Viso
Broken insulation
-
-
Visual
inspection
-
The visual sample
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note :
Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
9/16
Reliability Test Results
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Test
cate-
gories
Number Number
of test of failure
sample sample
Test items
Test Method 401
1 Terminal Strength
(Pull test)
5
5
5
5
5
5
5
5
5
0
0
0
0
0
0
0
0
0
Method
Ⅰ
Test Method 402
method
2 Mounting Strength
Ⅱ
Test Method 403
3 Vibration
Condition code B
Test Method 404
4 Shock
Condition code B
Test Method 201
1 High Temperature Storage
2 Low Temperature Storage
Test Method 202
Test Method 103
Test code C
3 Temperature Humidity
Storage
Test Method 105
4 Temperature Cycle
Test Method 307
5 Thermal Shock
method
Ⅰ
Condition code A
Test Method 101
1 High temperature Reverse Bias
5
5
5
0
0
0
Test Method 101
Test Method 106
2 High temperature Bias
( for gate )
3 Intermitted Operating Life
(Power cycling)
( for IGBT )
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
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[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj= 25oC (typ.) / chip
Tj= 125oC (typ.) / chip
40
30
20
10
0
40
30
20
10
0
15V
VGE=20V
VGE=20V 15V 13V
11V
13V
11V
9V
9V
0
0
0
1
2
3
4
5
0
1
2
3
4
VCE [ V ]
5
Collector - Emitter voltage
:
VCE [ V ]
Collector - Emitter voltage
:
[ Inverter ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25oC (typ.) / chip
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) / chip
40
30
20
10
0
10
8
Tj=125 o
C
Tj=25oC
6
4
Ic=30A
2
15A
7.5A
0
1
2
3
4
VCE [ V ]
5
8
10
12
14
16
18
20
22
Collector - Emitter voltage
:
Gate - Emitter voltage
:
VGE [ V ]
[ Inverter ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Vcc=300V, Ic=8A, Tj= 25oC
VGE=0V, f= 1MHz, Tj= 25o
C
500
400
300
200
100
0
25
20
15
10
5
1000
Cies
100
Coes
Cres
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
Collector - Emitter voltage
:
VCE [ V ]
Gate charge : Qg [ nC ]
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
11/16
[ Inverter ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=270, Tj= 25oC
Vcc=300V, VGE=+-15V, Rg=270, Tj= 125oC
1000
100
10
1000
100
10
ton
tr
ton
tr
toff
toff
tf
tf
5
10
15
20
25
30
35
5
0
0
10
15
20
25
30
35
Collector current
:
Ic [ A ]
Collector current
:
Ic [ A ]
[ Inverter ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=15A, VGE=+-15V, Tj= 25oC
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=270
4
3
2
1
0
toff
ton
Eon 125℃
1000
100
10
tr
tf
Eon 25℃
Eoff 125℃
Eoff 25℃
Err 125℃
Err 25℃
100
1000
10
20
30
40
Gate resistance
:
Rg [ ]
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
[ Inverter ]
Reverse bias safe operating area
Vcc=300V, Ic=15A, VGE=+-15V, Tj= 125o
C
+VGE=15V, -VGE<=15V, Rg=>270, Tj<=125oC
1.2
1
60
50
40
30
20
10
0
Eon
Eoff
0.8
0.6
0.4
0.2
Err
100
1000
200
400
600
800
Gate resistance
:
Rg [ ]
Collector - Emitter voltage
:
VCE [ V ]
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
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[ Inverter ]
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
chip
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=+-15V, Rg=270
40
30
20
10
0
trr 125℃
trr 25℃
Tj=25oC
Tj=125o
C
100
Irr 25℃
10
Irr 125℃
0
1
2
Forward on voltage
3
4
5
5
10
15
20
25
30
35
:
VF [ V ]
Forward current
:
IF [ A ]
[ Converter ]
Forward current vs. Forward on voltage (typ.) / chip
50
40
30
20
10
0
Tj=25oC
Tj=125o
C
0
0.4
0.8
Forward on voltage
1.2
VFM [ V ]
1.6
2
:
[ Thermistor ]
Temperature characteristic (typ.)
Thermal resistance (max.)
10
100
IGBT [Brake]
FWD [inverter,Brake]
IGBT [inverter]
CONV.Diode
10
1
1
0.1
0.1
0.001
0.01
0.1
1
10
-50
0
50
100
oC ]
150
200
Pulse width
:
Pw [ sec ]
Temperature [
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
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[ Brake]
[ Brake ]
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj= 25oC(typ.) / chip
Tj= 125oC(typ.) / chip
25
20
15
10
5
25
20
15
10
5
VGE=20V 15V
13V
VGE=20V
15V
13V
11V
11V
9V
9V
0
0
0
0
0
1
2
3
4
5
0
5
0
1
2
3
4
5
Collector - Emitter voltage
:
VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25oC (typ.) / chip
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) / chip
25
20
15
10
5
10
8
Tj=25oC
Tj=125 o
C
6
4
Ic=20A
10A
5A
2
0
0
1
2
3
4
5
6
10
15
20
25
Collector - Emitter voltage
:
VCE [ V ]
Gate - Emitter voltage
:
VGE [ V ]
[ Brake ]
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
Dynamic Gate charge (typ.)
Vcc=300V, Ic=4A, Tj= 25oC
500
400
300
200
100
0
25
20
15
10
5
1000
100
10
Cies
Coes
Cres
0
5
10
15
20
25
30
35
5
10
15
20
25
30
35
Collector - Emitter voltage
:
VCE [ V ]
Gate charge : Qg [ nC ]
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
14/16
Warnings
-
-
-
-
This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product
may be broken in case of using beyond the ratings.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する
場合があります。
Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment
from causing secondary destruction, such as fire, its spreading, or explosion.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず
付けて火災，爆発，延焼等の２次破壊を防いでください。
Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命
を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
When electric power is connected to equipments, rush current will be flown through rectifying diode to charge
DC capacitor. Guaranteed value of the rush current is specified as I2t (non-repetitive), however frequent rush
current through the diode might make it's power cycle destruction occur because of the repetitive power.
In application which has such frequent rush current, well consideration to product life time (i.e. suppressing
the rush current) is necessary.
電源投入時に整流用ダイオードには、コンデンサーを充電する為の突入電流が流れます。この突入電流に対する保証値は
I2t(非繰返し)として表記されていますが、この突入電流が頻繁に流れるとI2t破壊とは別に整流用ダイオードの繰返し負荷に
よるパワーサイクル耐量破壊を起こす可能性があります。突入電流が頻繁に流れるようなアプリケーションでは、突入電流値
を抑えるなど、製品寿命に十分留意してご使用下さい。
If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。
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Power cycle capability is classified to delta-Tj mode and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product.
In application which has such frequent rise and down of Tc, well consideration of product life time is necessary.
パワーサイクル耐量にはΔTjによる場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による
熱ストレスであり、本製品をご使用する際の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、
製品寿命に十分留意してご使用下さい。
Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product.
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本製品の実装にあたってはMounting Instructions (技術資料No. MT5F14628a) を参照してください。
Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor
contact problem.
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主端子及び制御端子に応力を与えて変形させないで下さい。端子の変形により、接触不良などを引き起こす場合があります。
Use this product with keeping the cooling fin's flatness between screw holes within 50um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex
of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too
large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will
be worse and over heat destruction may occur.
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冷却フィンはネジ取り付け位置間で平坦度を100mmで50um以下、表面の粗さは10um以下にして下さい。 過大な凸反り
があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、
本製品と冷却フインの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。
In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
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(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)
素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、
塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。
コンパウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。
(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)
It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊
する可能性があります。
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Fuji Electric Device Technology Co.,Ltd.
MS6M00814
15/16
If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some
countermeasures against static electricity.
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制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。
Never add the excessive mechanical stress to the main or control terminals when the product is applied to
equipments. The module structure may be broken.
素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。
In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent
this malfunction. (Recommended value : -VGE = -15V)
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に-VGEは十分な値で
設定して下さい。 （推奨値 : -VGE = -15V)
In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in
the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
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ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ
条件（+VGE, -VGE, RG等）でご使用下さい。
This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between
C-E terminals. Use this product within its absolute maximum voltage.
VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。VCEは必ず絶対定格の範囲内
でご使用下さい。
Control the surge voltage by adding a protection circuit (=snubber circuit) to the IGBT. Use a film capacitor
in the snubber circuit, and then set it near the IGBT in order to bipass high frequency surge currents.
IGBTに保護回路(=スナバ回路)を付けてサージ電圧を吸収させてください。スナバ回路のコンデンサにはフィルムコンデンサ
を用い、IGBTの近くに配置して高周波サージ電圧を吸収する手段を講じてください。
Cautions
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Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
design, spread-fire-preventive design, and malfunction-protective design.
富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保
のための手段を講じて下さい。
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The application examples described in this specification only explain typical ones that used the Fuji Electric Device
Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、
本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems, please apply after confirmation
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
16/16
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