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7MBR20UE-060 [ETC]

7 PIM IGBT ; 7 PIM IGBT\n
7MBR20UE-060
型号： 7MBR20UE-060
厂家： ETC    ETC
描述：

7 PIM IGBT
7 PIM IGBT\n

双极性晶体管
文件： 总4页 (文件大小：76K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Power Semiconductor Development Dept.  
Matsumoto Factory  
Fuji Electric Co.,Ltd.  
7MBR20UE060 Specification (Tentative)  
1. Outline Drawing ( Unit : mm )  
P1  
Gu  
U
Eb  
Gb  
B
Ew Gz Ev Gy  
Eu Gx  
P
T1  
T2  
Gv  
V
R
S
T
N
Gw  
W
Module only designed for mounting on PCB with 1.6~1.8mm thickness  
2. Equivalent circuit  
Nov 26 ‘02  
Nov 27 ‘02  
1
MT6M04460  
4
Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified)  
3.  
Maximum  
Ratings  
600  
Items  
Symbols  
Conditions  
Units  
Collector-Emitter voltage  
VCES  
VGES  
Ic  
V
V
A
Gate-Emitter voltage  
Collector current  
±20  
20  
Continuous  
1ms  
Tc=TBD  
Tc=25oC  
Tc=TBD  
36  
Icp  
40  
A
Tc=25oC  
72  
-Ic  
Pc  
Continuous  
1 device  
Tc=TBD  
20  
A
W
V
Collector Power Dissipation  
Collector-Emitter voltage  
Gate-Emitter voltage  
105  
600  
±20  
20  
VCES  
VGES  
Ic  
V
Continuous  
1ms  
Tc=TBD  
A
Tc=25oC  
Tc=TBD  
Tc=25oC  
25  
Collector current  
Icp  
40  
A
50  
Collector Power Dissipation  
Average Output Current  
Pc  
Io  
1 device  
80  
W
A
50Hz/60Hz  
sine wave  
20  
Tj=150oC,10ms  
Surge Current (Non-Repetitive)  
IFSM  
I2t  
105  
55  
A
I2t  
(Non-Repetitive)  
A2s  
oC  
oC  
V
half sine wave  
Junction temperature  
Storage temperature  
Isolation  
Tj  
150  
Tstg  
Viso  
-40~ +125  
2500  
between terminal and copper base(*1)  
AC : 1min.  
M4  
(*2)  
voltage  
2500  
V
between thermistor and others  
Mounting Screw Torque  
1.3 1.7  
～
N.m  
(*1) All terminals should be connected together when isolation test will be done.  
(*2) Terminal T1 and T2 should be connected together. And another terminals  
should be connected together and shorted to copper base.  
2
MT6M04460  
4
H04-004-03  
Electrical characteristics ( at Tj= 25oC unless otherwise specified)  
4.  
Characteristics  
Items  
Symbols  
Conditions  
min.  
typ.  
Max. Units  
Zero gate voltage  
Collector current  
I
V
V
V
V
=
=
=
=
0 V, V  
0 V, V  
= 600 V  
= +-20 V  
-
-
-
0.02  
200  
7.0  
mA  
nA  
V
CES  
GE  
CE  
CE  
GE  
CE  
GE  
Gate-Emitter leakage current  
I
-
GES  
Gate-Emitter  
threshold voltage  
V
20 V, Ic =  
20 mA  
5.0  
6.0  
GE(th)  
Collector-Emitter  
saturation voltage  
Input capacitance  
15 V, chip  
-
-
-
1.76  
1.81  
1550  
TBD  
TBD  
-
V
V
CE(sat)  
Cies  
Ic =  
20 A terminal  
V
=
0 V, V  
1 MHz  
=
CE  
10 V  
pF  
GE  
f =  
ton  
tr  
Vcc=  
Ic =  
300 V  
-
-
-
-
-
-
-
-
TBD  
TBD  
TBD  
TBD  
TBD  
1.49  
1.54  
-
1.2  
0.6  
-
Turn-on time  
20 A  
tr(i)  
toff  
tf  
V
R
=
±15 V  
s
µ
GE  
=
TBD  
1.0  
0.35  
TBD  
TBD  
300  
G
Ω
Turn-off time  
Forward on voltage  
V
I =  
F
20 A chip  
terminal  
F
V
Reverse recovery time  
Zero gate voltage  
Collector current  
trr  
IF =  
20 A  
0 V, V  
ns  
mA  
nA  
V
I
V
V
V
V
=
=
=
=
= 600 V  
-
-
-
-
0.02  
200  
7.0  
CES  
GE  
CE  
CE  
GE  
CE  
GE  
Gate-Emitter leakage current  
I
0 V, V  
= +-20 V  
GES  
Gate-Emitter  
threshold voltage  
Collector-Emitter  
V
20 V, Ic =  
20 mA  
5.0  
6.0  
GE(th)  
15 V, chip  
-
-
-
2.36  
2.41  
820  
TBD  
TBD  
-
V
V
CE(sat)  
Cies  
saturation voltage  
Input capacitance  
Ic =  
20 A terminal  
V
=
0 V, V  
1 MHz  
=
CE  
10 V  
pF  
GE  
f =  
ton  
tr  
Vcc=  
Ic =  
300 V  
-
-
-
-
TBD  
TBD  
TBD  
TBD  
-
1.2  
0.6  
1.0  
0.35  
300  
0.02  
-
Turn-on time  
Turn-off time  
20 A  
s
µ
toff  
tf  
V
R
=
±15 V  
GE  
=
TBD  
G
Ω
Reverse recovery time  
Reverse current  
trr  
IF =  
20 A  
ns  
-
-
-
-
I
V
=
R
600 V  
-
mA  
RRM  
Forward on voltage  
V
I =  
F
20 A chip  
terminal  
1.1  
1.2  
-
FM  
V
1.5  
1.0  
-
Reverse current  
Resistance  
I
V
=
R
800 V  
mA  
RRM  
-
-
T = 25oC  
T =100oC  
5000  
495  
Ω
R
465  
520  
T = 25/50oC  
B value  
B
3305 3375 3450  
K
5. Thermal resistance characteristics  
Items  
Characteristics  
Symbols  
Conditions  
min.  
typ.  
Max. Units  
TBD  
Inverter IGBT  
Inverter FWD  
Brake IGBT  
-
-
-
-
-
-
1.07  
1.80  
1.42  
2.50  
1.36  
0.05  
Thermal resistance  
(1 device)  
TBD  
oC/W  
R
th(j-c)  
TBD  
Brake diode  
TBD  
TBD  
Converter Diode  
with Thermal Compound (*)  
oC/W  
-
Contact Thermal resistance  
R
th(c-f)  
* This is the value which is defined mounting on the additional cooling fin with thermal compound.  
3
4
MT6M04460  
H04-004-03  
6. Indication on module  
ꢀꢀ  
ꢀꢀꢀꢀꢀꢀꢀꢀ  
ꢀꢀ  
TBD  
7. Applicable category  
This specification is applied to Power Integrated Module named 7MBR20UE060.  
8. Storage and transportation notes  
The module should be stored at a standard temperature of 5 to 35oC and  
humidity of 45 to 75% .  
・
・
Store modules in a place with few temperature changes in order to avoid  
condensation on the module surface.  
Avoid exposure to corrosive gases and dust.  
・
・
・
・
Avoid excessive external force on the module.  
Store modules with unprocessed terminals.  
Do not drop or otherwise shock the modules when transporting.  
9. Definitions of switching time  
90%  
0V  
0V  
V
GE  
t
rr  
L
I
rr  
V
Ic  
CE  
90%  
90%  
Vcc  
10%  
10%  
10%  
V
CE  
Ic  
0V  
0A  
R G  
V CE  
t
t
f
r(i)  
V GE  
t
Ic  
r
t
off  
t
on  
4
MT6M04460  
4
H04-004-03  

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