7MBP75RJ120 [FUJI]
IGBT IPM R-series 1200V class; IGBT IPM R系列1200V级
| 型号： | 7MBP75RJ120 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT IPM R-series 1200V class |
| 文件： | 总9页 (文件大小：348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
7MBP75RJ120
IGBT IPM R-series 1200V class
1200V / 75A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs.
· Low power loss and soft switching.
· High performance and high reliability IGBT with overheating protection.
· Both P-side and N-side alarm output available.
· Higher reliability because of a big decrease in number of parts in
built-in control circuit.
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Min.
Max.
Bus voltage
DC
VDC
VDC(surge)
VSC
VCES
IC
0
900
V
Surge
0
1000
V
Short operating
200
800
1200
75
V
Collector-Emitter voltage *1
Collector current
0
-
-
-
-
-
-
-
V
DC
A
1ms
ICP
150
75
A
Duty=76.1% *2
-IC
A
Collector power dissipation One transistor *3
PC
500
25
W
A
Collector current
DC
IC
1ms
ICP
50
A
Forward Current of Diode
IF
25
A
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
PC
198
20
W
V
VCC
Vin
-0.5
-0.5
Vcc+0.5
3
V
Input signal current
Iin
-
mA
V
Alarm signal voltage *6
VALM
IALM
Tj
-0.5
Vcc
20
Alarm signal current *7
-
-
mA
°C
°C
°C
V
Junction temperature
150
100
125
AC2500
3.5
Operating case temperature
Storage temperature
Topr
Tstg
Viso
-20
-40
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
-
-
-
Screw torque
Terminal (M5)
Mounting (M5)
N·m
N·m
3.5
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB.
*2 : 125°C/FRD Rth(j-c)/(Ic x VF Max.)=125/0.73(75x3.0)x100=76.1%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.25=500W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
7MBP75RJ120
IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item
Symbol
Condition
Min.
Typ.
Max.
1.0
2.6
-
Unit
mA
ICES
VCE=1200V Vin terminal open.
-
-
-
-
-
-
-
-
-
-
-
-
Collector current at off signal input
Collector-Emitter saturation voltage
VCE(sat)
VF
Ic=75A
Terminal
-
V
-
Chip
-Ic=75A
Terminal
-
3.0
-
V
Forward voltage of FWD
-
Chip
ICES
VCE=1200V Vin terminal open.
-
1.0
2.6
3.3
-
mA
V
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
VCE(sat)
VF
Ic=25A
Terminal
Terminal
-
-Ic=25A
-
1.2
-
µs
Turn-on time
ton
toff
trr
VDC=600V,Tj=125°C
3.6
0.3
Turn-off time
IC=75A Fig.1, Fig.6
-
Reverse recovery time
VDC=600V, IF=75A Fig.1, Fig.6
Control circuit
Item
Symbol
Iccp
Condition
Min.
Typ.
Max. Unit
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
mA
mA
V
-
-
-
18
65
ICCN
-
Vin(th)
1.00
1.25
1.35
1.70
1.95
OFF
V
1.60
8.0
VZ
Input zener voltage
Rin=20k ohm
V
-
-
-
-
tALM
Alarm signal hold time
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
ms
ms
ms
ohm
1.1
-
-
-
2.0
-
4.0
1575
RALM
Limiting Resistor for Alarm
1425
1500
Protection Section ( Vcc=15V)
Item
Symbol
Condition
Min.
113
38
-
Typ.
Max. Unit
-
-
-
Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IOC
A
Tj=125°C
-
IOC
A
Tj=125°C
10
-
-
tDOC
tSC
µs
µs
°C
Tj=125°C
-
12
-
Tj=125°C Fig.4
Surface of IGBT chips
150
IGBT Chip Over Heating
TjOH
Protection Temperature Level
-
20
-
-
Over Heating Protection Hysteresis
Over Heating Protection
TjH
°C
°C
110
125
TcOH
VDC=0V, IC=0A
Protection Temperature Level
CaseTemperature
-
20
-
-
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
TcH
VUV
VH
°C
V
11.0
12.5
0.2
0.5
-
V
Thermal characteristics( Tc=25°C)
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Min.
Typ.
Max.
0.25
0.73
0.63
-
Unit
°C/W
°C/W
°C/W
Junction to Case thermal resistance *8
-
-
-
Inverter
Brake
IGBT
FWD
IGBT
-
-
-
Case to fin thermal resistance with compound
*8 : (For 1 device, Case is under the device)
-
0.05
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item
Condition
Min.
Typ.
Max.
Unit
Common mode rectangular noise
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
±2.0
-
-
kV
Common mode lightning surge
±5.0
-
-
kV
Interval 20s, 10 times
Judge : no over-current, no miss operating
Recommendable value
Item
DC Bus Voltage
Symbol
VDC
VCC
-
Min.
-
Typ.
Max.
800
Unit
V
-
15.0
-
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
13.5
2.5
16.5
3.0
V
Nm
Weight
Item
Symbol
Min.
Typ.
Max.
Unit
Weight
Wt
-
450
-
g
7MBP75RJ120
IGBT-IPM
Vin(th)
Vin
On
Vin(th)
trr
90%
50%
Ic
90%
ton
10%
toff
Figure 1. Switching Time Waveform Definitions
off
off
/Vin
Vge (Inside IPM )
Fault (Inside IPM
/ALM
on
on
Gate On
Gate Off
)
normal
alarm
2ms (typ.)
tALM > Max.
1
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tALM > Max.
tALM
2
3
tsc
Ic
Ic
Ic
ALM
ALM
I
I
ALM
I
Figure.4 Definition of tsc
Vcc
P
20k
L
DC
300V
IPM
+
+
DC
15V
Vin
HCP-L
4504
CT
VccU
20k
P
GND
N
Ic
IPM
DC
15V
VinU
U
V
SW1
AC200V
GNDU
Vcc
Figure 6. Switching Characteristics Test Circuit
+
20k
DC
15V
VinX
W
N
Icc
Vcc
Vin
A
P
4700p
SW2
GND
Noise
IPM
U
V
DC
15V
P.G
+8V
fsw
Earth
Cooling
Fin
W
N
GND
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
7MBP75RJ120
IGBT-IPM
Block diagram
P
4
VccU
VinU
3
2
Pre- Driver
ALMU
RALM 1.5k
RALM 1.5k
RALM 1.5k
Vz
Vz
Vz
1
8
GNDU
VccV
U
VinV
7
6
Pre
- Driver
ALMV
5
GNDV
V
12
11
VccW
VinW
Pre - Driver
ALMW 10
GNDW
9
W
Vcc
14
16
VinX
Pre - Driver
Pre - Driver
Pre - Driver
Vz
Vz
Vz
Vz
GND 13
VinY
17
Pre-drivers include following functions
VinZ
18
1.Amplifier for driver
2.Short circuit protection
B
3.Under voltage lockout circuit
4.Over current protection
5.IGBT chip over heating protection
VinDB
15
- Driver
Pre
ALM
19
RALM 1.5k
N
Over heating protection
circuit
Outline drawings, mm
_
+
1
.
109
95
_
+
0
3
_
+
0 . 3
13.8
66.44
_
_
+
_
0 .
_
+
0 . 2 5
12
+
+
0
.
2
0
.
2
2
_
+
3.22
0
.
3
10
10
10
4-O5
/
_
+
_
+
0 .
_
+
_
0 .
0
.
1 5
1 5
0
.
1 5
+
6
6
6
1
2
1
B
P
N
W
V
U
0.5
24
26
26
19- 0.5
2- O2.5
/
6 -M5
Mass : 450g
IGBT-IPM
7MBP75RJ120
Characteristics
Control circuit characteristics (Respresentative)
Input signal threshold voltage
vs. Power supply voltage
Power supply current vs. Switching frequency
Tj=100°C
Tj=25°C
Tj=125°C
50
2.5
2
P-side
N-side
Vcc=17V
40
30
20
10
0
Vcc=15V
Vcc=13V
} Vin(off)
} Vin(on)
1.5
1
Vcc=17V
Vcc=15V
Vcc=13V
0.5
0
0
5
10
15
20
25
140
18
12
13
14
15
16
17
18
Power supply voltage : Vcc (V)
Sw itching frequency : fsw (kHz)
Under voltage vs. Junction temperature
Under voltage hysterisis vs. Jnction temperature
14
12
10
8
1
0.8
0.6
0.4
0.2
0
6
4
2
0
20
40
60
80
100
120
20
40
60
80
100
120
140
Junction temperature : Tj (°C)
Junction temperature : Tj (°C)
Over heating characteristics
TcOH,TjOH,TcH,TjH vs. Vcc
Alarm hold time vs. Power supply voltage
3
2.5
2
200
150
100
50
TjO H
Tj=125°C
Tj=25°C
TcO H
1.5
1
0.5
0
TcH,TjH
0
12
13
14
15
16
17
12
13
14
15
16
17
18
Power supply voltage : Vcc (V)
Power supply voltage : Vcc (V)
7MBP75RJ120
IGBT-IPM
Main circuit characteristics (Respresentative)
Collector current vs. Collector-Emitter voltage
Tj=25°C(Chip)
Collector current vs. Collector-Emitter voltage
Tj=25°C(Terminal)
120
120
100
80
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
Vcc=13V
100
Vcc=13V
80
60
40
20
0
60
40
20
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : Vce (V)
Collector-Emitter voltage : Vce (V)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Chip)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Terminal)
120
100
80
120
100
80
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
Vcc=13V
Vcc=13V
60
60
40
40
20
20
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : Vce (V)
Collector-Emitter voltage : Vce (V)
Forward current vs. Forward voltage
(Chip)
Forward current vs. Forward voltage
(Terminal)
120
100
80
120
100
80
125°C
25°C
25°C
125°C
60
60
40
40
20
20
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Forward voltage : Vf (V)
Forward voltage : Vf (V)
7MBP75RJ120
IGBT-IPM
Switching Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=125°C
Switching Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=25°C
35
30
25
20
15
10
5
35
30
25
20
15
10
5
Eon
Eon
Eoff
Err
Eoff
Err
0
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
Collector current : Ic (A)
Collector current : Ic (A)
Reversed biased safe operating area
Vcc=15V,Tj 125 °C
Transient thermal resistance
1050
900
750
600
450
300
150
0
1
FW D
IGBT
0.1
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
0.01
0
200
400
600
800
1000 1200 1400
0.001
0.01
0.1
1
Collector-Em itter voltage : Vce (V)
Pulse width :Pw (sec)
Power derating for IGBT
(per device)
Power derating for FWD
(per device)
600
500
400
300
200
100
0
200
175
150
125
100
75
50
25
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Case Temperature : Tc (°C)
Case Temperature : Tc (°C)
7MBP75RJ120
IGBT-IPM
Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=25 °C
Switching time vs. Collector current
Edc=600V,Vcc=15V,Tj=125°C
10000
1000
100
10000
1000
100
toff
ton
toff
ton
tf
tf
10
0
20
40
60
80
100
120
0
20
40
60
80
100
120
Collector current : Ic (A)
Collector current : Ic (A)
Reverse recovery characteristics
trr,Irr vs. IF
1000
100
10
trr125°C
trr25°C
Irr125°C
Irr25°C
0
20
40
60
80
100
120
Forward current : IF(A)
7MBP75RJ120
IGBT-IPM
Dynamic Brake Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C (Terminal)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Terminal)
40
40
35
30
25
20
15
10
5
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
35
30
Vcc=13V
Vcc=13V
25
20
15
10
5
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : Vce (V)
Collector-Emitter voltage : Vce (V)
Reversed biased safe operating area
Vcc=15V,Tj 125 °C
Transient thermal resistance
1
350
300
250
200
150
100
50
IGBT
0.1
SCS OA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
0
0.01
0
200
400
600
800
1000 1200 1400
0.001
0.01
0.1
1
Pulse width :Pw (sec)
Collector-Em itter voltage : Vce (V)
Power derating for IGBT
(per device)
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Case Temperature : Tc (°C)
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