6MBP25TEA120_技术文档

6MBP25TEA120

Econo IPM series

1200V / 25A 6 in one-package

Features

· Temperature protection provided by directly detecting the junction

temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in

built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

Symbol

Rating

Unit

Min.

Max.

VDC

VDC(surge)

VSC

VCES

IC

Bus voltage

DC

900

0

V

Surge

1000

0

V

Short operating

800

1200

25

400

V

Collector-Emitter voltage *1

Collector current

0

-

V

DC

1ms

DC

A

ICP

50

-

A

-IC

25

-

A

PC

Collector power dissipation One transistor *3

Supply voltage of Pre-Driver *4

Input signal voltage *5

139

20

-

W

V

VCC

Vin

-0.5

Vcc+0.5

3

-0.5

V

Iin

Input signal current

-

mA

V

VALM

IALM

Tj

Alarm signal voltage *6

Vcc

20

-0.5

Alarm signal current *7

-

mA

°C

V

Junction temperature

150

100

125

260

AC2500

3.5

Topr

Tstg

Operating case temperature

Storage temperature

-20

-40

Tsol

Solder temperature *8

-

Viso

Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)

Screw torque

Mounting (M5)

N·m

Note

*1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W, N and U or V or W

*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/2.05/(25 x 2.0) x 100>100%

*3 : Pc=125°C/IGBT Rth(j-c)=125/0.90=139W [Inverter]

*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13

*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.

*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.

*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

*8 : Immersion time 10±1sec.

6MBP25TEA120

IGBT-IPM

Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)

Main circuit

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

ICES

VCE=1200V Vin terminal open.

-

1.0

3.1

-

mA

V

Collector current at off signal input

Collector-Emitter saturation voltage

VCE(sat)

VF

Ic=25A

Terminal

Chip

-

2.4

-Ic=25A

Terminal

Chip

-

2.0

-

V

Forward voltage of FWD

-

1.6

ton

toff

trr

VDC=600V,Tj=125°C

Turn-on time

1.2

-

µs

IC=25A Fig.1, Fig.6

Turn-off time

-

3.6

0.3

VDC=600V, IF=25A Fig.1, Fig.6

Reverse recovery time

Control circuit

Item

Symbol

Iccp

Condition

Min.

Typ.

Max. Unit

Switching Frequency : 0 to 15kHz

Tc=-20 to 100°C Fig.7

ON

Supply current of P-line side pre-driver(one unit)

Supply current of N-line side pre-driver

Input signal threshold voltage (on/off)

mA

V

-

15

45

ICCN

-

Vin(th)

1.00

1.25

1.35

1.70

1.95

OFF

V

1.60

8.0

VZ

Rin=20k ohm

Input zener voltage

V

-

tALM

Tc=-20°C Fig.2

Tc=25°C Fig.2

Tc=125°C Fig.2

Alarm terminal

Alarm signal hold time

ms

ohm

1.1

-

2.0

-

4.0

1575

RALM

Current limit resistor

1425

1500

Protection Section ( Vcc=15V)

Item

Symbol

Condition

Min.

38

-

Typ.

Max. Unit

-

5

-

Over Current Protection Level of Inverter circuit

Over Current Protection Delay time

SC Protection Delay time

IOC

A

Tj=125°C

tDOC

tSC

µs

°C

Tj=125°C

-

8

-

Tj=125°C Fig.4

Surface of IGBT chips

150

-

IGBT Chip Over Heating

TjOH

Protection Temperature Level

-

20

-

12.5

-

Over Heating Protection Hysteresis

Under Voltage Protection Level

Under Voltage Protection Hysteresis

TjH

°C

V

11.0

0.2

VUV

VH

0.5

V

Thermal characteristics( Tc=25°C)

Item

Symbol

Rth(j-c)

Rth(c-f)

Min.

Typ.

Max.

0.90

2.05

-

Unit

Junction to Case thermal resistance *9

Inverter

IGBT

FWD

-

°C/W

-

Case to fin thermal resistance with compound

*9 : (For 1 device, Case is under the device)

0.05

Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)

Item

Condition

Min.

Typ.

Max.

Unit

Common mode rectangular noise

Pulse width 1µs, polarity ±,10minuets

Judge : no over-current, no miss operating

Rise time 1.2µs, Fall time 50µs

±2.0

-

kV

Common mode lightning surge

±5.0

-

kV

Interval 20s, 10 times

Judge : no over-current, no miss operating

Recommendable value

Item

DC Bus Voltage

Symbol

VDC

VCC

-

Min.

-

Typ.

Max.

800

Unit

V

-

15.0

-

Operating Supply Voltage of Pre-Driver

Screw torque (M5)

13.5

2.5

16.5

3.0

V

Nm

Weight

Item

Symbol

Min.

Typ.

Max.

Unit

Weight

Wt

-

270

-

g

6MBP25TEA120

IGBT-IPM

Vin(th)

Vin

On

Vin(th)

trr

90%

50%

Ic

90%

ton

10%

toff

Figure 1. Switching Time Waveform Definitions

off

/Vin

on

Gate On

Vge (Inside IPM )

Gate Off

Fault (Inside IPM

)

normal

alarm

/ALM

2ms (typ.)

t_{ALM > Max.}

1

Fault : Over-current,Over-heat or Under-voltage

Figure 2. Input/Output Timing Diagram

t_{ALM > Max.}

t_ALM

2

3

tsc

Ic

ALM

I

ALM

I

Figure.4 Definition of tsc

Vcc

P

20k

L

DC

+

IPM

DC

300V

600V

+

15V

Vin

HCP-L

4504

GND

N

CT

VccU

20k

Ic

P

IPM

DC

15V

VinU

Figure 6. Switching Characteristics Test Circuit

U

V

SW1

AC200V

AC400V

GNDU

Vcc

+

Icc

Vcc

Vin

A

P

20k

DC

15V

VinX

W

N

IPM

U

V

DC

15V

4700p

SW2

GND

Noise

P.G

+8V

fsw

W

N

GND

Earth

Cooling

Fin

Figure 5. Noise Test Circuit

Figure 7. Icc Test Circuit

6MBP25TEA120

IGBT-IPM

Block diagram

P

U

4

VccU

3

VinU

Pr e- Driv er

2

AL MU

ALM

R

1.5k

Vz

GNDU

Vcc V

1

8

7

6

VinV

AL MV

R ^ALM1.5k

GNDV

VccW

5

V

12

VinW ¹¹

ALMW ¹⁰

R ^ALM1.5k

GNDW

9

W

Vcc 14

VinX

16

Pr e- Driv er

Vz

GND ¹³

VinY

17

Vz

Pre-drivers include following functions

1.Amplifier for driver

18

2.Short circuit protection

VinZ

3.Under voltage lockout circuit

4.Over current protection

5.IGBT chip over heating protection

NC

B

VinDB

15

NC

AL M

19

ALM

R

1.5k

N

Outline drawings, mm

Package type : P622

Dimensions in mm

Mass : 270g

6MBP25TEA120

IGBT-IPM

Characteristics

Control circuit characteristics (Representative)

Power supply current vs. Switching frequency

Tj=125°C (typ.)

Input signal threshold voltage

vs. Power supply voltage (typ.)

Tj=25°C

Tj=125°C

30

2.5

P-side

N-side

25

2

} Vin(off)

} Vin(on)

Vcc=17V

20

Vcc=15V

1.5

1

Vcc=13V

15

10

Vcc=17V

Vcc=15V

Vcc=13V

0.5

5

0

5

10

15

20

25

12

13

14

15

16

17

18

Power supply voltage : Vcc (V)

Switching frequency : fsw (kHz)

Under voltage hysterisis vs. Jnction temperature (typ.)

1

Under voltage vs. Junction temperature (typ.)

14

12

10

8

0.8

0.6

0.4

0.2

0

6

4

2

0

20

40

60

80

100

120

140

20

40

60

80

100

120

140

Junction temperature : Tj (°C)

Over heating characteristics

TjOH,TjH vs. Vcc (typ.)

Alarm hold time vs. Power supply voltage (typ.)

3

200

150

100

50

TjOH

2.5

Tc=100°C

2

Tc=25°C

1.5

1

0.5

0

TjH

0

12

13

14

15

16

17

18

12

13

14

15

16

17

18

Power supply voltage : Vcc (V)

6MBP25TEA120

IGBT-IPM

Main circuit characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ.)

Tj=25°C / Chip

Collector current vs. Collector-Emitter voltage (typ.)

Tj=25°C / Terminal

50

Vcc=15V

40

Vcc=17V

Vcc=13V

Vcc=17V

Vcc=13V

30

20

10

0

30

20

10

0

0.5

1

1.5

2

2.5

3

3.5

4

0

0.5

1

1.5

2

2.5

3

3.5

4

Collector-Emitter voltage : Vce (V)

Collector current vs. Collector-Emitter voltage (typ.)

Tj=125°C / Terminal

Collector current vs. Collector-Emitter voltage (typ.)

Tj=125°C / Chip

50

Vcc=15V

40

Vcc=17V

30

Vcc=13V

20

10

0

10

0

0.5

1

1.5

2

2.5

3

3.5

4

0

0.5

1

1.5

2

2.5

3

3.5

4

Collector-Emitter voltage : Vce (V)

Forward current vs. Forward voltage (typ.)

Chip

Forward current vs. Forward voltage (typ.)

Terminal

50

40

30

20

10

0

40

30

20

10

0

25°C

125°C

25°C

125°C

0

0.5

1

1.5

2

2.5

0

0.5

1

1.5

2

2.5

Forward voltage : Vf (V)

6MBP25TEA120

IGBT-IPM

Switching Loss vs. Collector Current (typ.)

Edc=600V,Vcc=15V,Tj=25°C

Edc=600V,Vcc=15V,Tj=125°C

15

10

5

15

10

5

Eon

Eoff

Err

Eoff

Err

0

10

20

30

40

50

0

10

20

30

40

50

Collector Current : Ic (A)

Reversed biased safe operating area

Vcc=15V,Tj <= 125°C (min.)

Transient thermal resistance (max.)

350

300

250

200

150

100

50

FW D

1

IGBT

SCSOA

(non-repetitive pulse)

0.1

R BSOA

(R epetitive pulse)

0.01

0

0.001

0.01

0.1

1

10

0

200

400

600

800

1000

1200

1400

Pulse width :Pw (sec)

Collector-Emitter voltage : Vce (V)

Power derating for IGBT (max.)

(per device)

Power derating for FWD (max.)

(per device)

200

150

100

50

100

80

60

40

20

0

20

40

60

80 100 120 140 160

0

20

40

60

80 100 120 140 160

Case Temperature : Tc (°C)

6MBP25TEA120

IGBT-IPM

Switching time vs. Collector current (typ.)

Edc=600V,Vcc=15V,Tj=25°C

Edc=600V,Vcc=15V,Tj=125°C

10000

1000

100

10000

1000

100

toff

ton

toff

tf

10

0

10

20

30

40

50

0

10

20

30

40

50

Collector current : Ic (A)

Reverse recovery characteristics

trr,Irr vs.IF (typ.)

trr125°C

trr25°C

100

10

1

Irr25°C

Irr125°C

0

10

20

30

40

50

Forward current:IF(A)


型号：	6MBP25TEA120
厂家：	FUJI ELECTRIC
描述：	1200V / 25A 6 in one-package 在单一包装1200V / 25A 6 运动控制电子器件信号电路电动机控制
文件：	总8页 (文件大小：305K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

6MBP25TEA120 [FUJI]

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