6MBP25VBA120-50 [FUJI]
IGBT MODULE (V series) 1200V / 25A / IPM; IGBT模块（ V系列） 1200V / 25A / IPM
| 型号： | 6MBP25VBA120-50 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT MODULE (V series) 1200V / 25A / IPM |
| 文件： | 总8页 (文件大小：871K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
6MBP25VBA120-50
IGBT MODULE (V series)
1200V / 25A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• Compatible with existing IPM-N series packages
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (T =25ºC, VCC=15V unless otherwise specified)
C
Items
Symbol
Min.
Max.
Units
Collector-Emitter Voltage (*1)
Short Circuit Voltage (*2)
V
V
CES
SC
0
1200
800
25
V
V
200
DC
Ic
-
A
Collector Current
1ms
Ic pulse
-Ic
-
50
A
Duty=100% (*3)
1 device (*4)
-
25
A
Collector Power Dissipation
Supply Voltage of Pre-Driver (*5)
Input Signal Voltage (*6)
Alarm Signal Voltage (*7)
Alarm Signal Current (*8)
Junction Temperature
Operating Case Temperature
Storage Temperature
Pc
-
-0.5
-0.5
-0.5
-
151
20
W
VCC
V
Vin
V
CC+0.5
V
V
ALM
V
CC
V
I
ALM
20
150
mA
ºC
ºC
ºC
ºC
Vrms
Nm
Tj
-
Topr
Tstg
Tsol
-20
-40
-
110
125
Solder Temperature (*9)
Isolating Voltage (*10)
260
V
-
iso
-
AC2500
1.7
Screw Torque
Mounting (M4)
-
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W)-N.
Note *2: In the case of VCC=16.5V,design the load inductance to be over 1μH.
Note *3: Duty=125ºC/Rth(j-c)D /(I
Note *4: P =125ºC/Rth(j-c)Q
F
×VF Max.)×100
C
Note *5: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13.
Note *6: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16~18 and 13.
Note *7: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13.
Note *8: IALM shall be applied to the input current to terminal No.2,6,10 and 19.
Note *9: Immersion time 10±1sec. 1time.
Note *10: Terminal to base, 50/60Hz sine wave 1minute.
1
6MBP25VBA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specified)
Items
Collector Current at off signal input
Symbol
Conditions
Min.
Typ.
Max.
Units
I
CES
VCE=1200V
-
-
1.0
2.20
-
mA
V
Terminal
Chip
-
-
Collector-Emitter saturation voltage
Forward voltage of FWD
V
V
CE(sat)
I
I
C
=25A
-
1.70
V
Terminal
Chip
-
-
-
2.60
-
V
F
F=25A
2.10
V
ton
toff
1.1
-
-
-
-
µs
µs
V
DC=600V, Tj=125ºC
Ic=25A
2.1
Switching time
VDC=600V
trr
-
-
0.3
µs
IF=25A
Supply current of P-side pre-driver (per one unit)
Supply current of N-side pre-driver
Iccp
-
-
-
-
10
30
1.6
1.9
-
mA
mA
V
Switching Frequency= 0-15kHz
Tc=-20~110ºC
Iccn
Vinth(on)
Vinth(off)
ON
Vin-GND
1.2
1.5
38
-
1.4
1.7
-
Input signal threshold voltage
OFF
V
Over Current Protection Level
IOC
tdOC
tSC
Tj=125ºC
A
Over Current Protection Delay time
Short Circuit Protection Delay time
Tj=125ºC
5
-
µs
µs
ºC
ºC
V
Tj=125ºC
-
2
3
IGBT Chips Over Heating Protection Temperature Level TjOH
Surface of IGBT Chips
150
-
-
-
Over Heating Protection Hysteresis
Under Voltage Protection Level
T
jH
20
-
-
V
UV
H
11.0
0.2
1.0
2.5
5.0
960
12.5
-
Under Voltage Protection Hysteresis
V
0.5
2.0
4.0
8.0
1265
V
tALM(OC)
tALM(UV)
t
ALM(TjOH)
2.4
4.9
11.0
1570
ms
ms
ms
Ω
ALM-GND
Tc=-20~110ºC
Alarm Signal Hold Time
VCC
10V
Resistance for current limit
RALM
Thermal Characteristics (T = 25ºC)
C
Items
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Min.
Typ.
Max.
0.83
1.16
-
Units
IGBT
FWD
-
-
-
-
-
°C/W
°C/W
°C/W
Junction to Case Thermal Resistance (*10)
Inverter
Case to Fin Thermal Resistance with Compound
0.05
Note *10: For 1device, the measurement point of the case is just under the chip.
Noise Immunity (VDC=300V, VCC=15V)
Items
Conditions
Min.
±2.0
Typ.
Max.
Units
Pulse width 1μs, polarity ±, 10 minute
Judge : no over-current, no miss operating
Common mode rectangular noise
-
-
kV
Recommended Operating Conditions
Items
Symbol
Min.
-
Typ.
Max.
800
16.5
-
Units
V
DC Bus Voltage
VDC
-
Power Supply Voltage of Pre-Driver
VCC
13.5
1.0
1.3
15.0
V
Arm shoot through blocking time for IPM's input signal tdead
Screw Torque (M4)
-
-
µs
-
1.7
Nm
2
6MBP25VBA120-50
Block Diagram
VccU
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
P
U
VinU
Pre-Driver
Pre-Driver
ALMU
RALM
RALM
RALM
GNDU
VccV
VinV
ALM V
GNDV
VccW
V
VinW
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
ALM W
GNDW
Vcc
W
VinX
GND
VinY
VinZ
ALM
N
RALM
Pre-drivers include following functions
1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
3
6MBP25VBA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Power supply current vs. Switching frequency
Tj=25ºC (typ.)
Input signal threshold voltage
vs. Power supply boltage (typ.)
3
2.5
2
30
20
10
0
Vcc=17V
Vcc=15V
Vcc=13V
N-side
P-side
Tc=25~125ºC
Vinth (off)
1.5
1
Vinth (on)
Vcc=17V
Vcc=15V
Vcc=13V
0.5
0
0
5
10
15
20
25
12
13
14
15
16
17
18
Switchig frequency : fsw [kHz]
Power supply voltage : Vcc [V]
Under voltage vs. Junction temperature (typ.)
Under voltage hysterisis
vs. Junction temperature (typ.)
15
12
9
1
0.8
0.6
0.4
0.2
0
6
3
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
Junction temperature : Tj [ºC]
Junction temperature : Tj [ºC]
Alarm hold time vs. Power supply voltage (typ.)
Over heating characteristics
TjoH, TjH vs. Vcc (typ.)
10
8
200
150
100
50
TjoH
tALM(TjOH)
6
4
tALM(OC)
2
TjH
0
0
12
13
14
15
16
17
18
12
13
14
15
16
17
18
Power supply voltage : Vcc [V]
Power supply voltage : Vcc [V]
4
6MBP25VBA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. collector-Emitter voltage
Tj=25ºC [Chip] (typ.)
Collector current vs. collector-Emitter voltage
Tj=25ºC [Terminal] (typ.)
40
30
20
10
0
40
30
20
10
0
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=13V
Vcc=13V
Vcc=17V
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector current vs. collector-Emitter voltage
Tj=125ºC [Chip] (typ.)
Collector current vs. collector-Emitter voltage
Tj=125ºC [Terminal] (typ.)
40
30
20
10
0
40
30
20
10
0
Vcc=15V
Vcc=15V
Vcc=13V
Vcc=13V
Vcc=17V
Vcc=17V
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Forward current vs. Forward voltage
[Chip] (typ.)
Forward current vs. Forward voltage
[Terminal] (typ.)
40
30
20
10
0
40
Tj=25ºC
Tj=25ºC
30
20
10
0
Tj=125ºC
Tj=125ºC
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Forward voltage : VF [V]
Forward voltage : VF [V]
5
6MBP25VBA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching Loss vs. Collector Current (typ.)
VDC=300V, Vcc=15V, Tj=25ºC
Switching Loss vs. Collector Current (typ.)
VDC=300V, Vcc=15V, Tj=125ºC
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Eon
Eon
Eoff
Err
Eoff
Err
0
10
20
30
40
0
0
0
10
20
30
40
Collector Current : Ic [A]
Collector Current : Ic [A]
Reversed biased safe operating area
Vcc=15V, Tjꢀ 125ºC [Main Terminal] (min.)
Transient thermal resistance (max.)
100
75
50
25
0
10
FWD
IGBT
1
0.1
RBSOA
(Repetitive pulse)
0.01
300
600
900
1200
1500
0.001
0.01
0.1
1
10
Collector-Emitter voltage : VCE [V]
Pulse width : Pw [sec]
Power derating for IGBT (max.)
[per device]
Power derating for FWD(max.)
[per device]
200
150
100
50
200
150
100
50
0
0
50
100
150
0
50
100
150
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
6
6MBP25VBA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
VDC=300V, Vcc=15V, Tj=25ºC
Switching time vs. Collector current (typ.)
VDC=300V, Vcc=15V, Tj=125ºC
10000
1000
100
10000
1000
100
ton
toff
ton
toff
tf
tf
10
10
0
10
20
30
40
0
10
20
30
40
Collector current : Ic [A]
Collector current : Ic [A]
Reverse recovery characteristics (typ.)
trr, Irr vs. If
Over current protection vs. Junction temperature
(typ. ) Vcc=15V
1000
100
80
60
40
20
0
trr Tj=125ºC
100
10
1
trr Tj=25ºC
Irr Tj=125ºC
Irr Tj=25ºC
0
10
20
30
40
0
20
40
60
80
100
120
140
Forward current : IF [A]
Junction temperature : Tj [ºC]
Outline Drawings, mm
7
6MBP25VBA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
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granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
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the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
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requirements.
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