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2SK3917-01MR [FUJI]

N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
2SK3917-01MR
型号： 2SK3917-01MR
厂家： FUJI ELECTRIC    FUJI ELECTRIC
描述：

N-CHANNEL SILICON POWER MOSFET
N沟道硅功率MOSFET
文件： 总4页 (文件大小：125K)
中文：  中文翻译
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2SK3917-01MR FUJI POWER MOSFET  
200509  
N-CHANNEL SILICON POWER MOSFET  
Super FAP-G Series  
Outline Drawings [mm]  
Features  
TO-220F  
High speed switching  
No secondary breadown  
Avalanche-proof  
Low on-resistance  
Low driving power  
Applications  
Switching regulators  
DC-DC converters  
UPS (Uninterruptible Power Supply)  
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Item  
Symbol  
VDS  
Ratings  
450  
Unit  
V
Remarks  
Drain-source voltage  
VGS=-30V  
V
A
A
V
A
VDSX  
ID  
450  
Continuous drain current  
Pulsed drain current  
4.3  
ID(puls]  
VGS  
±17.2  
±30  
Gate-source voltage  
Note *1  
Note *2  
Note *3  
Repetitive or non-repetitive  
IAR  
4.3  
Non-repetitive  
Maximum avalanche energy  
Equivalent circuit schematic  
mJ  
EAS  
211  
Repetitive  
Maximum avalanche energy  
2.1  
mJ  
Drain(D)  
<
Maximum drain-source dV/dt  
Peak diode recovery dV/dt  
Max. power dissipation  
dVDS/dt  
dV/dt  
PD  
20  
VDS 450V  
kV/µs  
kV/µs  
W
=
5
Note *4  
2.16  
°C  
°C  
Ta=25  
21  
W
Tc=25  
Gate(G)  
Operating and storage  
temperature range  
Isolation voltage  
Tch  
+150  
-55 to +150  
2
°C  
Tstg  
°C  
Source(S)  
t=60sec, f=60Hz  
VISO *6  
kVrms  
Note *1 Tch 150°C  
=
Note *2 Starting Tch=25°C, IAS=1.8A, L=119mH, VCC=45V, RG=50Ω  
EAS limited by maximum channel temperrature and avalanche current.  
See to ‘Avalanche Energy’ graph.  
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.  
See to ‘Transient Thermal impedance’ graph.  
<
<
<
Note *4 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C  
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Symbol  
V(BR)DSS  
VGS(th)  
Item  
Test Conditions  
µ
Drain-source breakdown voltage  
Gate threshold voltage  
ID= 250 A  
VGS=0V  
VDS=VGS  
V
450  
3.0  
µ
ID= 250 A  
V
5.0  
25  
2.0  
100  
1.60  
µA  
mA  
nA  
Tch=25°C  
VDS=450V VGS=0V  
VDS=360V VGS=0V  
VGS=±30V  
VDS=0V  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
IGSS  
RDS(on)  
gfs  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
ID=2.1A VGS=10V  
1.30  
3.5  
Ω
S
ID=2.1A VDS=25V  
VDS=25V  
1.8  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
330  
500  
Output capacitance  
VGS=0V  
50  
2
75  
Reverse transfer capacitance  
Turn-on time ton  
f=1MHz  
VCC=300V ID=2.1A  
4
ns  
11  
17.5  
8.5  
34.5  
8.0  
20  
VGS=10V  
5.5  
23  
5.0  
td(off)  
tf  
Turn-off time toff  
RGS=10 Ω  
QG  
13.0  
6.0  
nC  
Total Gate Charge  
VCC=225V  
ID=4.3A  
9.0  
3.8  
QGS  
QGD  
VSD  
Gate-Source Charge  
Gate-Drain Charge  
2.5  
VGS=10V  
1.00  
280  
1.6  
1.50  
V
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
IF=4.3A VGS=0V Tch=25°C  
IF=4.3A VGS=0V  
-di/dt=100A/µs  
Tch=25°C  
trr  
Qrr  
ns  
µC  
Thermalcharacteristics  
Item  
Min.  
Typ.  
Max. Units  
Symbol  
Test Conditions  
Rth(ch-c)  
channel to case  
5.952  
°C/W  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
58.0  
°C/W  
1
2SK3917-01MR  
FUJI POWER MOSFET  
Characteristics  
Allowable Power Dissipation  
PD=f(Tc)  
Typical Output Characteristics  
ID=f(VDS):80 µs pulse test,Tch=25°C  
30  
25  
20  
15  
10  
5
9
8
7
6
5
4
3
2
1
0
20V  
10V  
8.0V  
7.0V  
6.5V  
6.0V  
VGS=5.5V  
0
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10 12 14 16 18 20 22  
VDS [V]  
Tc [°C]  
Typical Transfer Characteristic  
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C  
Typical Transconductance  
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C  
100  
10  
1
10  
1
0.1  
0.1  
0.01  
0.01  
0.1  
1
10  
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0  
VGS[V]  
ID [A]  
Typical Drain-Source on-state Resistance  
RDS(on)=f(ID):80 µs pulse test,Tch=25°C  
Drain-Source On-state Resistance  
RDS(on)=f(Tch):ID=2.1A,VGS=10V  
4.5  
5
4
3
2
1
0
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VGS=  
5.5V 6.0V  
6.5V  
7.0V  
8V  
10V  
20V  
max.  
typ.  
0
2
4
6
8
10  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [°C]  
ID [A]  
2
2SK3917-01MR  
FUJI POWER MOSFET  
Typical Gate Charge Characteristics  
Gate Threshold Voltage vs. Tch  
VGS=f(Qg):ID=4.3A,Tch=25°C  
VGS(th)=f(Tch):VDS=VGS,ID=250uA  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
20  
18  
16  
14  
12  
10  
8
max.  
min.  
Vcc= 90V  
225V  
360V  
6
4
2
0
0
5
10  
15  
20  
25  
30  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [°C]  
Qg [nC]  
Typical Capacitance  
Typical Forward Characteristics of Reverse Diode  
C=f(VDS):VGS=0V,f=1MHz  
IF=f(VSD):80 µs pulse test,Tch=25°C  
1n  
100p  
10p  
1p  
100  
10  
1
Ciss  
Coss  
Crss  
100f  
0.1  
0.00  
10-1  
100  
101  
102  
103  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
1.75  
2.00  
VSD [V]  
VDS [V]  
Maximum Avalanche Energy vs. starting Tch  
EAS=f(starting Tch):Vcc=45V  
Typical Switching Characteristics vs. ID  
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω  
300  
250  
200  
150  
100  
50  
tf  
102  
101  
100  
IAS=1.8A  
td(off)  
td(on)  
IAS=2.6A  
IAS=4.3A  
tr  
0
10-1  
100  
101  
0
25  
50  
75  
100  
125  
150  
starting Tch [°C]  
ID [A]  
3
2SK3917-01MR  
FUJI POWER MOSFET  
Maximum Avalanche Current Pulsewidth  
IAV=f(tAV):starting Tch=25°C,Vcc=45V  
102  
101  
100  
10-1  
10-2  
Single Pulse  
10-8  
10-7  
10-6  
10-5  
10-4  
10-3  
10-2  
tAV [sec]  
Transient Thermal Impedance  
Zth(ch-c)=f(t):D=0  
102  
101  
100  
10-1  
10-2  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
t [sec]  
http://www.fujielectric.co.jp/fdt/scd/  
4

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