2SK3918 [KEXIN]
MOS Field Effect Transistor; MOS场效应
| 型号： | 2SK3918 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Field Effect Transistor |
| 文件： | 总1页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
MOS Field Effect Transistor
2SK3918
TO-252
Unit: mm
+0.15
6.50
-0.15
+0.1
2.30
-0.1
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Features
Low on-state resistance
RDS(on)1 = 7.5 m MAX. (VGS = 10 V, ID = 24 A)
Low Ciss: Ciss = 1300 pF TYP.
5 V drive available
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
25
20
Gate to source voltage
V
A
48
Drain current
Idp *
A
192
1.0
Power dissipation
TA=25
TC=25
PD
W
29
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
Max
10
Unit
A
VDS=25V,VGS=0
Gate leakage current
Gate cut off voltage
nA
V
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=12A
VGS=10V,ID=24A
VGS=5.0V,ID=12A
100
3.0
2.5
6
2.5
12
Forward transfer admittance
S
RDS(on)1
RDS(on)2
Ciss
5.9
11
7.5
mÙ
mÙ
pF
pF
pF
ns
ns
ns
ns
nC
Drain to source on-state resistance
22.2
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
1300
310
220
13
Coss
VDS=10V,VGS=0,f=1MHZ
Crss
ton
tr
14
ID=24A,VGS(on)=10V,RG=10
,VDD=12.5V
Turn-off delay time
Fall time
toff
38
tf
14
Total Gate Charge
QG
28
VDD = 20V
VGS = 10 V
ID =48A
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
5
10
nC
nC
V
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IF = 48A, VGS = 0 V
IF = 48 A, VGS = 0 V
di/dt = 100 A/ ìs
0.98
27
ns
nC
Qrr
15
1
www.kexin.com.cn
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