2SK3677-01MR [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET型号: | 2SK3677-01MR |
厂家: | FUJI ELECTRIC |
描述: | N-CHANNEL SILICON POWER MOSFET |
文件: | 总4页 (文件大小:115K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK3677-01MR
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
TO-220F
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
700
Unit
V
Drain-source voltage
VDS
V
VDSX *5
ID
700
±12
±48
±30
12
A
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
Equivalent circuit schematic
V
Gate-source voltage
A
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR *2
Drain(D)
mJ
kV/µs
kV/µs
W
EAS*1
276.7
40
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
5
°C
°C
2.16
Gate(G)
95
+150
-55 to +150
Operating and storage
temperature range
Isolation Voltage
°C
Source(S)
Tstg
°C
Viso *6
2
kVrms
<
*1 L=3.53mH, Vcc=70V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch=150°C
<
<
<
<
*4 VDS 700V *5 VGS=-30V *6 t=60sec, f=60Hz
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
µ
V
Drain-source breakdown voltaget
Gate threshold voltage
ID=250 A
VGS=0V
VDS=VGS
700
µ
V
ID= 250 A
3.0
5.0
µA
25
VDS=700V VGS=0V
VDS=560V VGS=0V
Tch=25°C
Zero gate voltage drain current
IDSS
Tch=125°C
250
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VGS=±30V
ID=6A
VDS=0V
100
VGS=10V
Ω
S
0.72
0.93
6
12
1100
170
11
ID=6A VDS=25V
VDS=25V
Ciss
pF
1650
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
255
17
36
12
72
17
Reverse transfer capacitance
Turn-on time ton
f=1MHz
ns
VCC=300V ID=6A
VGS=10V
24.5
7.5
47.5
10
td(off)
tf
Turn-off time toff
RGS=10 Ω
QG
QGS
QGD
IAV
nC
Total Gate Charge
31
46.5
VCC=350V
ID=12A
4.5
11
8
Gate-Source Charge
Gate-Drain Charge
16.5
VGS=10V
12
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=3.53mH Tch=25°C
VSD
trr
Qrr
0.90
1.50
V
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/µs
Tch=25°C
2.6
µs
µC
16.0
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
1.316
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
1
2SK3677-01MR
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
Allowable Power Dissipation
PD=f(Tc)
120
100
80
60
40
20
0
20
15
10
5
20V
10V
8.0V
7.0V
6.5V
6.0V
VGS=5.5V
0
0
5
10
15
20
25
0
25
50
75
100
125
150
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
10
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
VGS[V]
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
2.5
2.0
1.5
1.0
0.5
0.0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGS=5.5V
6.0V
6.5V
7.0V
8.0V
10V
20V
max.
typ.
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
Tch [°C]
ID [A]
2
2SK3677-01MR
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Typical Gate Charge Characteristics
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS=f(Qg):ID=12A,Tch=25°C
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
10
8
Vcc= 140V
350V
560V
max.
min.
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
Tch [°C]
Qg [nC]
Typical Capacitance
Typical Forward Characteristics of Reverse Diode
C=f(VDS):VGS=0V,f=1MHz
IF=f(VSD):80 µs pulse test,Tch=25°C
101
10
Ciss
100
10-1
10-2
10-3
Coss
Crss
1
0.1
0.00
100
101
102
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=70V
103
102
101
100
700
600
500
400
300
200
100
0
IAS=5A
tf
IAS=8A
td(off)
IAS=12A
td(on)
tr
10-1
100
101
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3677-01MR
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=70V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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